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    SEMICONDUCTOR DEVICE INCLUDING DIELECTRIC LAYER
    1.
    发明申请
    SEMICONDUCTOR DEVICE INCLUDING DIELECTRIC LAYER 有权

    公开(公告)号：US20220068968A1

    公开(公告)日：2022-03-03

    申请号：US17523014

    申请日：2021-11-10

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Ji Hoon CHOI ,  Sung Gil KIM ,  Seulye KIM ,  Jung Ho KIM ,  Hong Suk KIM ,  Phil Ouk NAM ,  Jae Young AHN ,  Han Jin LIM

    IPC: H01L27/11582 ,  H01L23/528 ,  H01L27/11565

    Abstract: A semiconductor device includes a stack structure on a substrate, the stack structure including interlayer insulating layers and first gate electrodes alternately stacked on each other, a semiconductor layer in an opening penetrating through the stack structure, a first dielectric layer between the semiconductor layer and the stack structure, and a lower pattern closer to the substrate than to the first gate electrodes in the stack structure, the lower pattern including a first surface facing the first dielectric layer, and a second surface facing the stack structure, the second surface defining an acute angle with the first surface, wherein the first dielectric layer includes a first portion facing the stack structure, and a second portion facing the first surface of the lower pattern, the second portion having a thickness greater than a thickness of the first portion.

    CAPACITOR STRUCTURE AND SEMICONDUCTOR MEMORY DEVICE INCLUDING THE SAME
    2.
    发明申请
    CAPACITOR STRUCTURE AND SEMICONDUCTOR MEMORY DEVICE INCLUDING THE SAME 有权

    公开(公告)号：US20250016978A1

    公开(公告)日：2025-01-09

    申请号：US18613471

    申请日：2024-03-22

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Jung Min PARK ,  Ji-Sung KIM ,  Hae Ryong KIM ,  Bo-Eun PARK ,  Han Jin LIM ,  Hyung Suk JUNG

    IPC: H10B12/00

    Abstract: A capacitor structure is provided. The capacitor structure comprises an upper electrode, a lower electrode including a lower electrode film and a lower interface electrode film, a capacitor dielectric film between the lower electrode and the upper electrode, and an interface blocking film between the lower electrode and the capacitor dielectric film, the interface blocking film being in contact with the capacitor dielectric film and the lower interface electrode film, wherein the interface blocking film includes a first metal oxide containing a first metal element, the lower interface electrode film includes a second conductive metal oxide containing a second metal element different from the first metal element, the capacitor dielectric film does not include the first metal oxide, and a thickness of the lower interface electrode film is greater than that of the interface blocking film.

    SEMICONDUCTOR DEVICE INCLUDING CAPACITOR AND METHOD OF FORMING THE SAME
    4.
    发明申请
    SEMICONDUCTOR DEVICE INCLUDING CAPACITOR AND METHOD OF FORMING THE SAME 有权

    公开(公告)号：US20210020735A1

    公开(公告)日：2021-01-21

    申请号：US17030678

    申请日：2020-09-24

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Sang Yeol KANG ,  Kyu Ho CHO ,  Han Jin LIM ,  Cheol Seong HWANG

    IPC: H01L49/02 ,  H01L27/108

    Abstract: A semiconductor device including a switching element on a substrate, a pad isolation layer on the switching element, a conductive pad passing through the pad isolation layer and connected to the switching element, an insulating pattern on the pad isolation layer and having a height greater than a horizontal width, a lower electrode on side surfaces of the insulating pattern on side surfaces of the insulating pattern and in contact with the conductive pad, a capacitor dielectric layer on the lower electrode and having a monocrystalline dielectric layer and a polycrystalline dielectric layer, the monocrystalline dielectric layer being relatively close to side surfaces of the insulating pattern compared to the polycrystalline dielectric layer an upper electrode on the capacitor dielectric layer may be provided.

    SEMICONDUCTOR DEVICE INCLUDING CAPACITOR AND METHOD OF FORMING THE SAME
    6.
    发明申请
    SEMICONDUCTOR DEVICE INCLUDING CAPACITOR AND METHOD OF FORMING THE SAME 有权

    公开(公告)号：US20220336574A1

    公开(公告)日：2022-10-20

    申请号：US17854679

    申请日：2022-06-30

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Sang Yeol KANG ,  Kyu Ho CHO ,  Han Jin LIM ,  Cheol Seong HWANG

    IPC: H01L49/02 ,  H01L27/108

    Abstract: A semiconductor device including a switching element on a substrate, a pad isolation layer on the switching element, a conductive pad passing through the pad isolation layer and connected to the switching element, an insulating pattern on the pad isolation layer and having a height greater than a horizontal width, a lower electrode on side surfaces of the insulating pattern on side surfaces of the insulating pattern and in contact with the conductive pad, a capacitor dielectric layer on the lower electrode and having a monocrystalline dielectric layer and a polycrystalline dielectric layer, the monocrystalline dielectric layer being relatively close to side surfaces of the insulating pattern compared to the polycrystalline dielectric layer an upper electrode on the capacitor dielectric layer may be provided.

    SEMICONDUCTOR DEVICE
    7.
    发明申请
    SEMICONDUCTOR DEVICE 有权

    公开(公告)号：US20220231117A1

    公开(公告)日：2022-07-21

    申请号：US17714259

    申请日：2022-04-06

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Han Jin LIM ,  Ki Nam KIM ,  Hyung Suk JUNG ,  Kyoo Ho JUNG ,  Ki Hyun HWANG

    IPC: H01L49/02 ,  H01L21/02 ,  H01L21/28 ,  H01L27/11507

    Abstract: There is provided a semiconductor device capable of improving the performance and/or reliability of the element, by increasing the capacitance of the capacitor, using a capacitor dielectric film including a ferroelectric material and a paraelectric material. The semiconductor device includes first and second electrodes disposed to be spaced apart from each other, and a capacitor dielectric film disposed between the first electrode and the second electrode and including a first dielectric film and a second dielectric film. The first dielectric film includes one of a first monometal oxide film and a first bimetal oxide film, the first dielectric film has an orthorhombic crystal system, the second dielectric film includes a paraelectric material, and a dielectric constant of the capacitor dielectric film is greater than a dielectric constant of the second dielectric film.

    SEMICONDUCTOR DEVICE INCLUDING DIELECTRIC LAYER
    8.
    发明申请
    SEMICONDUCTOR DEVICE INCLUDING DIELECTRIC LAYER 审中-公开

    公开(公告)号：US20190027495A1

    公开(公告)日：2019-01-24

    申请号：US16142637

    申请日：2018-09-26

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Ji Hoon CHOI ,  Sung Gil KIM ,  Seulye KIM ,  Jung Ho KIM ,  Hong Suk KIM ,  Phil Ouk NAM ,  Jae Young AHN ,  Han Jin LIM

    IPC: H01L27/11582 ,  H01L23/528 ,  H01L27/11565

    Abstract: A semiconductor device includes a stack structure on a substrate, the stack structure including interlayer insulating layers and first gate electrodes alternately stacked on each other, a semiconductor layer in an opening penetrating through the stack structure, a first dielectric layer between the semiconductor layer and the stack structure, and a lower pattern closer to the substrate than to the first gate electrodes in the stack structure, the lower pattern including a first surface facing the first dielectric layer, and a second surface facing the stack structure, the second surface defining an acute angle with the first surface, wherein the first dielectric layer includes a first portion facing the stack structure, and a second portion facing the first surface of the lower pattern, the second portion having a thickness greater than a thickness of the first portion.

    SEMICONDUCTOR DEVICE
    10.
    发明公开
    SEMICONDUCTOR DEVICE 审中-公开

    公开(公告)号：US20230361161A1

    公开(公告)日：2023-11-09

    申请号：US18347850

    申请日：2023-07-06

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Han Jin LIM ,  Ki Nam KIM ,  Hyung Suk JUNG ,  Kyoo Ho JUNG ,  Ki Hyun HWANG

    IPC: H01L21/28 ,  H01L21/02

    CPC classification number: H01L28/56 ,  H01L21/02197 ,  H01L21/02192 ,  H01L21/02189 ,  H01L21/02181 ,  H01L21/28247 ,  H10B53/30 ,  H10B12/00

    Abstract: There is provided a semiconductor device capable of improving the performance and/or reliability of the element, by increasing the capacitance of the capacitor, using a capacitor dielectric film including a ferroelectric material and a paraelectric material. The semiconductor device includes first and second electrodes disposed to be spaced apart from each other, and a capacitor dielectric film disposed between the first electrode and the second electrode and including a first dielectric film and a second dielectric film. The first dielectric film includes one of a first monometal oxide film and a first bimetal oxide film, the first dielectric film has an orthorhombic crystal system, the second dielectric film includes a paraelectric material, and a dielectric constant of the capacitor dielectric film is greater than a dielectric constant of the second dielectric film.

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