公开(公告)号：US20210293701A1

公开(公告)日：2021-09-23

申请号：US17036855

申请日：2020-09-29

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jongju Park ,  Raewon Yi ,  Hakseung Han ,  Seongsue Kim

IPC: G01N21/41 ,  G03F1/22 ,  G03F1/84 ,  G03F7/20

Abstract: An apparatus and a method for correctly measuring a phase of an extreme ultraviolet (EUV) mask and a method of fabricating an EUV mask including the method are described. The apparatus for measuring the phase of the EUV mask includes an EUV light source configured to generate and output EUV light, at least one mirror configured to reflect the EUV light as reflected EUV light incident on an EUV mask to be measured, a mask stage on which the EUV mask is arranged, a detector configured to receive the EUV light reflected from the EUV mask, to obtain a two-dimensional (2D) image, and to measure reflectivity and diffraction efficiency of the EUV mask, and a processor configured to determine a phase of the EUV mask by using the reflectivity and diffraction efficiency of the EUV mask.

公开(公告)号：US20140220481A1

公开(公告)日：2014-08-07

申请号：US14136560

申请日：2013-12-20

Applicant: Samsung Electronics Co., Ltd.

Inventor： Mun Ja Kim ,  Donggun Lee ,  Seongsue Kim

IPC: G03F1/48

CPC classification number: G03F1/48

Abstract: The present inventive concept provides a photomask including a substrate, patterns disposed on the substrate, and an anti-contamination layer disposed on the patterns. The anti-contamination layer includes at least one graphene layer. Methods of fabricating a semiconductor device including the same are also provided.

Abstract translation: 本发明构思提供了一种光掩模，其包括基板，设置在基板上的图案，以及设置在图案上的抗污染层。 抗污染层包括至少一个石墨烯层。 还提供了制造包括该半导体器件的半导体器件的方法。