公开(公告)号：US09466490B2

公开(公告)日：2016-10-11

申请号：US14740779

申请日：2015-06-16

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sanghyun Kim ,  Chalykh Roman ,  Jongju Park ,  Donggun Lee ,  Seongsue Kim

IPC: H01L21/268 ,  H01L21/324 ,  B23K26/352 ,  B23K26/354 ,  H01L21/027 ,  B23K26/00 ,  B23K26/06 ,  B23K26/073 ,  G03F1/24 ,  G02B27/09 ,  H01L21/033

CPC classification number: H01L21/268 ,  B23K26/037 ,  B23K26/06 ,  B23K26/064 ,  B23K26/073 ,  B23K26/352 ,  B23K26/354 ,  G02B27/0927 ,  G02B27/0955 ,  G02B27/0977 ,  G02B27/0988 ,  G03F1/24 ,  H01L21/0274 ,  H01L21/0275 ,  H01L21/0332 ,  H01L21/0337 ,  H01L21/324

Abstract: A treatment system comprises an energy source that generates a energy beam that is emitted along an energy beam pathway. A beam section shaper is positioned along the energy beam pathway that receives an incident energy beam and modifies a section shape thereof to output a shape-modified energy beam. A beam intensity shaper is positioned along the energy beam pathway that receives an incident energy beam having a first intensity profile and outputs an intensity-modified energy beam having a second intensity profile, wherein the first intensity profile has a relative maximum average intensity at a center region thereof and wherein the second intensity profile has a relative minimum average intensity at a center region thereof.

公开(公告)号：US20240184192A1

公开(公告)日：2024-06-06

申请号：US18441665

申请日：2024-02-14

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hakseung Han ,  Sanguk Park ,  Jongju Park ,  Raewon Yi

IPC: G03F1/24 ,  B23K26/06 ,  H01L21/268

CPC classification number: G03F1/24 ,  B23K26/06 ,  H01L21/268

Abstract: A laser annealing method performed on a reflective photomask may include preparing a reflective photomask including a pattern area and a border area surrounding the pattern area and irradiating a laser beam onto the border area of the reflective photomask. The irradiating of the laser beam may include split-irradiating a plurality of laser beam spots onto the border area. Each of the plurality of laser beam spots may be shaped using a beam shaper. The beam shaper may include a blind area, a transparent area at a center of the blind area, and a semitransparent area between the blind area and the transparent area. Each of the plurality of laser beam spots may include a center portion passing through the transparent area and having a uniform energy profile and an edge portion passing through the semitransparent area and having an inclined energy profile.

公开(公告)号：US11934092B2

公开(公告)日：2024-03-19

申请号：US18048949

申请日：2022-10-24

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hakseung Han ,  Sanguk Park ,  Jongju Park ,  Raewon Yi

IPC: G03F1/24 ,  B23K26/06 ,  H01L21/268

CPC classification number: G03F1/24 ,  B23K26/06 ,  H01L21/268

Abstract: A laser annealing method performed on a reflective photomask may include preparing a reflective photomask including a pattern area and a border area surrounding the pattern area and irradiating a laser beam onto the border area of the reflective photomask. The irradiating of the laser beam may include split-irradiating a plurality of laser beam spots onto the border area. Each of the plurality of laser beam spots may be shaped using a beam shaper. The beam shaper may include a blind area, a transparent area at a center of the blind area, and a semitransparent area between the blind area and the transparent area. Each of the plurality of laser beam spots may include a center portion passing through the transparent area and having a uniform energy profile and an edge portion passing through the semitransparent area and having an inclined energy profile.

公开(公告)号：US11852583B2

公开(公告)日：2023-12-26

申请号：US18179662

申请日：2023-03-07

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jongju Park ,  Raewon Yi ,  Hakseung Han ,  Seongsue Kim

IPC: G01N21/41 ,  G01N21/956 ,  G03F1/22 ,  G03F1/84 ,  G03F1/24 ,  G01J9/00 ,  G01N21/33

CPC classification number: G01N21/41 ,  G01J9/00 ,  G01N21/956 ,  G03F1/22 ,  G03F1/24 ,  G03F1/84 ,  G01N2021/335 ,  G01N2021/95676 ,  G01N2201/061 ,  G01N2201/0636

Abstract: An apparatus and a method for correctly measuring a phase of an extreme ultraviolet (EUV) mask and a method of fabricating an EUV mask including the method are described. The apparatus for measuring the phase of the EUV mask includes an EUV light source configured to generate and output EUV light, at least one mirror configured to reflect the EUV light as reflected EUV light incident on an EUV mask to be measured, a mask stage on which the EUV mask is arranged, a detector configured to receive the EUV light reflected from the EUV mask, to obtain a two-dimensional (2D) image, and to measure reflectivity and diffraction efficiency of the EUV mask, and a processor configured to determine a phase of the EUV mask by using the reflectivity and diffraction efficiency of the EUV mask.

公开(公告)号：US11635371B2

公开(公告)日：2023-04-25

申请号：US17036855

申请日：2020-09-29

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jongju Park ,  Raewon Yi ,  Hakseung Han ,  Seongsue Kim

IPC: G01N21/41 ,  G01N21/956 ,  G03F1/22 ,  G03F1/84 ,  G03F1/24 ,  G01J9/00 ,  G01N21/33

Abstract: An apparatus and a method for correctly measuring a phase of an extreme ultraviolet (EUV) mask and a method of fabricating an EUV mask including the method are described. The apparatus for measuring the phase of the EUV mask includes an EUV light source configured to generate and output EUV light, at least one mirror configured to reflect the EUV light as reflected EUV light incident on an EUV mask to be measured, a mask stage on which the EUV mask is arranged, a detector configured to receive the EUV light reflected from the EUV mask, to obtain a two-dimensional (2D) image, and to measure reflectivity and diffraction efficiency of the EUV mask, and a processor configured to determine a phase of the EUV mask by using the reflectivity and diffraction efficiency of the EUV mask.

公开(公告)号：US11506968B2

公开(公告)日：2022-11-22

申请号：US16911601

申请日：2020-06-25

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hakseung Han ,  Sanguk Park ,  Jongju Park ,  Raewon Yi

IPC: G21K5/00 ,  G03F1/24 ,  B23K26/06 ,  H01L21/268

Abstract: A laser annealing method performed on a reflective photomask may include preparing a reflective photomask including a pattern area and a border area surrounding the pattern area and irradiating a laser beam onto the border area of the reflective photomask. The irradiating of the laser beam may include split-irradiating a plurality of laser beam spots onto the border area. Each of the plurality of laser beam spots may be shaped using a beam shaper. The beam shaper may include a blind area, a transparent area at a center of the blind area, and a semitransparent area between the blind area and the transparent area. Each of the plurality of laser beam spots may include a center portion passing through the transparent area and having a uniform energy profile and an edge portion passing through the semitransparent area and having an inclined energy profile.

公开(公告)号：US20210293701A1

公开(公告)日：2021-09-23

申请号：US17036855

申请日：2020-09-29

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jongju Park ,  Raewon Yi ,  Hakseung Han ,  Seongsue Kim

IPC: G01N21/41 ,  G03F1/22 ,  G03F1/84 ,  G03F7/20

Abstract: An apparatus and a method for correctly measuring a phase of an extreme ultraviolet (EUV) mask and a method of fabricating an EUV mask including the method are described. The apparatus for measuring the phase of the EUV mask includes an EUV light source configured to generate and output EUV light, at least one mirror configured to reflect the EUV light as reflected EUV light incident on an EUV mask to be measured, a mask stage on which the EUV mask is arranged, a detector configured to receive the EUV light reflected from the EUV mask, to obtain a two-dimensional (2D) image, and to measure reflectivity and diffraction efficiency of the EUV mask, and a processor configured to determine a phase of the EUV mask by using the reflectivity and diffraction efficiency of the EUV mask.

公开(公告)号：US12259647B2

公开(公告)日：2025-03-25

申请号：US17371375

申请日：2021-07-09

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jongkeun Oh ,  Sanguk Park ,  Gyeongcheon Jo ,  Jongju Park

IPC: G03F1/24 ,  H01L21/027

Abstract: A method is provided. The method includes preparing a mask blank, the mask blank including a substrate, a reflective layer disposed on the substrate for reflecting extreme ultraviolet light, and a light absorbing layer disposed on the reflective layer; providing a photomask by forming a plurality of pattern elements having a target critical dimension from the light absorbing layer, wherein the plurality of pattern elements include a correction target pattern element to be corrected, and the correction target pattern element has a critical dimension different from the target critical dimension; identifying a correction target area of the photomask in which the correction target pattern element is disposed; applying an etchant to the photomask; and irradiating a laser beam to the correction target area while the etchant is provided on the photomask.

公开(公告)号：US20250068050A1

公开(公告)日：2025-02-27

申请号：US18678622

申请日：2024-05-30

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Munja Kim ,  Jongju Park ,  Byunghoon Lee ,  Yunhan Lee

IPC: G03F1/24

Abstract: A photomask assembly includes a mask pattern providing an upper surface and including a plurality of pins extending in a vertical direction with respect to the upper surface, a pellicle membrane disposed to be spaced apart from the mask pattern in the vertical direction, and a frame assembly configured to support the pellicle membrane, wherein the frame assembly includes a frame body having a plurality of pin holes configured to respectively fasten the plurality of pins, a first magnetic member configured to surround the plurality of pin holes inside the frame body and generate an attractive force on the plurality of pins, and a second magnetic member disposed in a lower portion of the frame body and configured to generate an attractive force on the upper surface of the mask pattern.

公开(公告)号：US09703186B2

公开(公告)日：2017-07-11

申请号：US14755693

申请日：2015-06-30

Applicant: Samsung Electronics Co., Ltd.

Inventor： Mun Ja Kim ,  Byunggook Kim ,  Jongju Park ,  Jaehyuck Choi

IPC: G03F1/62 ,  G03F1/64

CPC classification number: G03F1/62

Abstract: Provided is a mask. The mask may include a mask substrate, mask patterns on the mask substrate, frames disposed on an edge of the mask substrate outside the mask patterns, and a pellicle spaced apart from the mask patterns, the pellicle being disposed on the frames, wherein the pellicle includes protection layers each of which has a nanometer thickness.