公开(公告)号：US20230236124A1

公开(公告)日：2023-07-27

申请号：US18179662

申请日：2023-03-07

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jongju Park ,  Raewon Yi ,  Hakseung Han ,  Seongsue Kim

IPC: G01N21/41 ,  G03F1/22 ,  G01J9/00 ,  G03F1/24 ,  G03F1/84 ,  G01N21/956

CPC classification number: G01N21/41 ,  G01J9/00 ,  G01N21/956 ,  G03F1/22 ,  G03F1/24 ,  G03F1/84 ,  G01N2021/335 ,  G01N2021/95676 ,  G01N2201/061 ,  G01N2201/0636

Abstract: An apparatus and a method for correctly measuring a phase of an extreme ultraviolet (EUV) mask and a method of fabricating an EUV mask including the method are described. The apparatus for measuring the phase of the EUV mask includes an EUV light source configured to generate and output EUV light, at least one mirror configured to reflect the EUV light as reflected EUV light incident on an EUV mask to be measured, a mask stage on which the EUV mask is arranged, a detector configured to receive the EUV light reflected from the EUV mask, to obtain a two-dimensional (2D) image, and to measure reflectivity and diffraction efficiency of the EUV mask, and a processor configured to determine a phase of the EUV mask by using the reflectivity and diffraction efficiency of the EUV mask.

公开(公告)号：US11852583B2

公开(公告)日：2023-12-26

申请号：US18179662

申请日：2023-03-07

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jongju Park ,  Raewon Yi ,  Hakseung Han ,  Seongsue Kim

IPC: G01N21/41 ,  G01N21/956 ,  G03F1/22 ,  G03F1/84 ,  G03F1/24 ,  G01J9/00 ,  G01N21/33

CPC classification number: G01N21/41 ,  G01J9/00 ,  G01N21/956 ,  G03F1/22 ,  G03F1/24 ,  G03F1/84 ,  G01N2021/335 ,  G01N2021/95676 ,  G01N2201/061 ,  G01N2201/0636

Abstract: An apparatus and a method for correctly measuring a phase of an extreme ultraviolet (EUV) mask and a method of fabricating an EUV mask including the method are described. The apparatus for measuring the phase of the EUV mask includes an EUV light source configured to generate and output EUV light, at least one mirror configured to reflect the EUV light as reflected EUV light incident on an EUV mask to be measured, a mask stage on which the EUV mask is arranged, a detector configured to receive the EUV light reflected from the EUV mask, to obtain a two-dimensional (2D) image, and to measure reflectivity and diffraction efficiency of the EUV mask, and a processor configured to determine a phase of the EUV mask by using the reflectivity and diffraction efficiency of the EUV mask.

公开(公告)号：US11774846B2

公开(公告)日：2023-10-03

申请号：US17933872

申请日：2022-09-21

Applicant: Samsung Electronics Co., Ltd.

Inventor： Seongsue Kim ,  Dongwan Kim ,  Hwanseok Seo

IPC: G03F1/26 ,  G03F1/24

CPC classification number: G03F1/26 ,  G03F1/24

Abstract: Phase shift masks for an extreme ultraviolet lithography process includes a substrate, a reflection layer on the substrate, a capping layer on the reflection layer, and phase shift patterns on the capping layer. Each of the phase shift patterns may include a lower absorption pattern on the capping layer and an upper absorption pattern on the lower absorption pattern. A refractive index of the upper absorption pattern may be higher than a refractive index of the lower absorption pattern, and a thickness of the upper absorption pattern is smaller than a thickness of the lower absorption pattern.

公开(公告)号：US11487197B2

公开(公告)日：2022-11-01

申请号：US17120480

申请日：2020-12-14

Applicant: Samsung Electronics Co., Ltd.

Inventor： Seongsue Kim ,  Dongwan Kim ,  Hwanseok Seo

IPC: G03F1/26 ,  G03F1/24

Abstract: Phase shift masks for an extreme ultraviolet lithography process includes a substrate, a reflection layer on the substrate, a capping layer on the reflection layer, and phase shift patterns on the capping layer. Each of the phase shift patterns may include a lower absorption pattern on the capping layer and an upper absorption pattern on the lower absorption pattern. A refractive index of the upper absorption pattern may be higher than a refractive index of the lower absorption pattern, and a thickness of the upper absorption pattern is smaller than a thickness of the lower absorption pattern.

公开(公告)号：US10401602B2

公开(公告)日：2019-09-03

申请号：US15172390

申请日：2016-06-03

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Hoyeon Kim ,  Seongsue Kim

IPC: G02B19/00 ,  H05G2/00 ,  G21K1/06

Abstract: An extreme ultraviolet (EUV) light generator includes a collecting mirror having a first focal point and a second focal point, the first focal point being closer to the collecting mirror than the second focal point, a laser to generate a laser beam and to radiate the laser beam toward the first focal point of the collecting mirror, and a droplet generator to generate a droplet and to discharge the droplet at the first focal point of the collecting mirror, wherein the collecting mirror includes a concave reflective surface, a through hole in a center of the reflective surface, and a drip hole between the through hole and an outer circumferential surface of the reflective surface.

公开(公告)号：US12099293B2

公开(公告)日：2024-09-24

申请号：US17328008

申请日：2021-05-24

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hwanseok Seo ,  Seongsue Kim ,  Changyoung Jeong

IPC: G03F1/26 ,  G03F1/58

CPC classification number: G03F1/26 ,  G03F1/58

Abstract: A phase shift mask for extreme ultraviolet lithography includes a substrate, a reflective layer on the substrate, a capping layer on the reflective layer, a buffer pattern on the capping layer, the buffer pattern including an opening exposing a surface of the capping layer, and an absorber pattern on the buffer pattern, the absorber pattern including a refractive index less than a refractive index of the buffer pattern and a thickness greater than a thickness of the buffer pattern. The buffer pattern includes a material having an etch selectivity with respect to the absorber pattern and the capping layer.

公开(公告)号：US20230018819A1

公开(公告)日：2023-01-19

申请号：US17933872

申请日：2022-09-21

Applicant: Samsung Electronics Co., Ltd.

Inventor： Seongsue Kim ,  Dongwan Kim ,  Hwanseok Seo

IPC: G03F1/26 ,  G03F1/24

Abstract: Phase shift masks for an extreme ultraviolet lithography process includes a substrate, a reflection layer on the substrate, a capping layer on the reflection layer, and phase shift patterns on the capping layer. Each of the phase shift patterns may include a lower absorption pattern on the capping layer and an upper absorption pattern on the lower absorption pattern. A refractive index of the upper absorption pattern may be higher than a refractive index of the lower absorption pattern, and a thickness of the upper absorption pattern is smaller than a thickness of the lower absorption pattern.

公开(公告)号：US10126642B2

公开(公告)日：2018-11-13

申请号：US15285543

申请日：2016-10-05

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Insung Kim ,  Seongsue Kim

IPC: G03B27/52 ,  G03B27/42 ,  G03F1/24 ,  G03F1/54

Abstract: Provided is a reflective photomask including a substrate, and a reflective layer formed on the substrate. The reflective layer includes at least one recessed portion. An absorbing layer is formed in the recessed portion. The absorbing layer includes at least one absorbent and at least one polymer.

公开(公告)号：US09466490B2

公开(公告)日：2016-10-11

申请号：US14740779

申请日：2015-06-16

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sanghyun Kim ,  Chalykh Roman ,  Jongju Park ,  Donggun Lee ,  Seongsue Kim

IPC: H01L21/268 ,  H01L21/324 ,  B23K26/352 ,  B23K26/354 ,  H01L21/027 ,  B23K26/00 ,  B23K26/06 ,  B23K26/073 ,  G03F1/24 ,  G02B27/09 ,  H01L21/033

CPC classification number: H01L21/268 ,  B23K26/037 ,  B23K26/06 ,  B23K26/064 ,  B23K26/073 ,  B23K26/352 ,  B23K26/354 ,  G02B27/0927 ,  G02B27/0955 ,  G02B27/0977 ,  G02B27/0988 ,  G03F1/24 ,  H01L21/0274 ,  H01L21/0275 ,  H01L21/0332 ,  H01L21/0337 ,  H01L21/324

Abstract: A treatment system comprises an energy source that generates a energy beam that is emitted along an energy beam pathway. A beam section shaper is positioned along the energy beam pathway that receives an incident energy beam and modifies a section shape thereof to output a shape-modified energy beam. A beam intensity shaper is positioned along the energy beam pathway that receives an incident energy beam having a first intensity profile and outputs an intensity-modified energy beam having a second intensity profile, wherein the first intensity profile has a relative maximum average intensity at a center region thereof and wherein the second intensity profile has a relative minimum average intensity at a center region thereof.

公开(公告)号：US11635371B2

公开(公告)日：2023-04-25

申请号：US17036855

申请日：2020-09-29

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jongju Park ,  Raewon Yi ,  Hakseung Han ,  Seongsue Kim

IPC: G01N21/41 ,  G01N21/956 ,  G03F1/22 ,  G03F1/84 ,  G03F1/24 ,  G01J9/00 ,  G01N21/33

Abstract: An apparatus and a method for correctly measuring a phase of an extreme ultraviolet (EUV) mask and a method of fabricating an EUV mask including the method are described. The apparatus for measuring the phase of the EUV mask includes an EUV light source configured to generate and output EUV light, at least one mirror configured to reflect the EUV light as reflected EUV light incident on an EUV mask to be measured, a mask stage on which the EUV mask is arranged, a detector configured to receive the EUV light reflected from the EUV mask, to obtain a two-dimensional (2D) image, and to measure reflectivity and diffraction efficiency of the EUV mask, and a processor configured to determine a phase of the EUV mask by using the reflectivity and diffraction efficiency of the EUV mask.