Phase shift masks for extreme ultraviolet lithography

    公开(公告)号:US11774846B2

    公开(公告)日:2023-10-03

    申请号:US17933872

    申请日:2022-09-21

    CPC classification number: G03F1/26 G03F1/24

    Abstract: Phase shift masks for an extreme ultraviolet lithography process includes a substrate, a reflection layer on the substrate, a capping layer on the reflection layer, and phase shift patterns on the capping layer. Each of the phase shift patterns may include a lower absorption pattern on the capping layer and an upper absorption pattern on the lower absorption pattern. A refractive index of the upper absorption pattern may be higher than a refractive index of the lower absorption pattern, and a thickness of the upper absorption pattern is smaller than a thickness of the lower absorption pattern.

    Phase shift masks for extreme ultraviolet lithography

    公开(公告)号:US11487197B2

    公开(公告)日:2022-11-01

    申请号:US17120480

    申请日:2020-12-14

    Abstract: Phase shift masks for an extreme ultraviolet lithography process includes a substrate, a reflection layer on the substrate, a capping layer on the reflection layer, and phase shift patterns on the capping layer. Each of the phase shift patterns may include a lower absorption pattern on the capping layer and an upper absorption pattern on the lower absorption pattern. A refractive index of the upper absorption pattern may be higher than a refractive index of the lower absorption pattern, and a thickness of the upper absorption pattern is smaller than a thickness of the lower absorption pattern.

    EUV light generator including collecting mirror having drip hole

    公开(公告)号:US10401602B2

    公开(公告)日:2019-09-03

    申请号:US15172390

    申请日:2016-06-03

    Abstract: An extreme ultraviolet (EUV) light generator includes a collecting mirror having a first focal point and a second focal point, the first focal point being closer to the collecting mirror than the second focal point, a laser to generate a laser beam and to radiate the laser beam toward the first focal point of the collecting mirror, and a droplet generator to generate a droplet and to discharge the droplet at the first focal point of the collecting mirror, wherein the collecting mirror includes a concave reflective surface, a through hole in a center of the reflective surface, and a drip hole between the through hole and an outer circumferential surface of the reflective surface.

    PHASE SHIFT MASKS FOR EXTREME ULTRAVIOLET LITHOGRAPHY

    公开(公告)号:US20230018819A1

    公开(公告)日:2023-01-19

    申请号:US17933872

    申请日:2022-09-21

    Abstract: Phase shift masks for an extreme ultraviolet lithography process includes a substrate, a reflection layer on the substrate, a capping layer on the reflection layer, and phase shift patterns on the capping layer. Each of the phase shift patterns may include a lower absorption pattern on the capping layer and an upper absorption pattern on the lower absorption pattern. A refractive index of the upper absorption pattern may be higher than a refractive index of the lower absorption pattern, and a thickness of the upper absorption pattern is smaller than a thickness of the lower absorption pattern.

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