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公开(公告)号：US11935910B2
公开(公告)日：2024-03-19
申请号：US17027960
申请日：2020-09-22
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Jongin Yang , Joosung Kim , Donggun Lee , Suhyun Jo
CPC classification number: H01L27/156 , H01L33/0093 , H01L33/405 , H01L33/42 , H01L33/505 , H01L2933/0016 , H01L2933/0041
Abstract: Provided is a semiconductor light-emitting device including a substrate, a first insulating layer disposed on an upper surface of the substrate, a plurality of light-emitting structures disposed on the first insulating layer and spaced apart from each other, each of the plurality of light-emitting structures including a first semiconductor layer, an active layer, and a second semiconductor layer, a plurality of optical layers each filling a groove that is formed at a certain depth in the second semiconductor layer, a plurality of first electrodes penetrating the substrate and electrically connected to the first semiconductor layer, a plurality of second insulating layers disposed on side surfaces of each of the plurality of light-emitting structures, respectively, and a second electrode connected to the plurality of light-emitting structures, the second electrode being disposed on an uppermost surface of the second semiconductor layer and each of the plurality of second insulating layers.
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公开(公告)号：US20240021751A1
公开(公告)日：2024-01-18
申请号：US18222296
申请日：2023-07-14
Applicant: SAMSUNG ELECTRONICS CO,. LTD.
Inventor： Jihye Yeon , Hankyu Seong , Sunghyun Sim , Donggun Lee , Youngjin Choi
CPC classification number: H01L33/0093 , H01L33/06 , H01L33/08 , H01L33/325
Abstract: A method of manufacturing an LED module includes forming a first conductivity-type semiconductor base layer on a growth substrate; forming a mask pattern having first to third openings on the first conductivity-type semiconductor base layer, wherein the mask pattern the first to the third openings having different widths and arranged with a same pitch; simultaneously forming first to third light emitting laminates in the first to third openings, respectively; removing the mask pattern from the first conductivity-type semiconductor base layer; and removing an edge region of each of the first to third light emitting laminates, wherein first to third light emitting laminates include a first to third active layers configured to emit light of different wavelengths, respectively.
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3.发明申请公开(公告)号：US20140220481A1
公开(公告)日：2014-08-07
申请号：US14136560
申请日：2013-12-20
Applicant: Samsung Electronics Co., Ltd.
Inventor： Mun Ja Kim , Donggun Lee , Seongsue Kim
IPC: G03F1/48
CPC classification number: G03F1/48
Abstract: The present inventive concept provides a photomask including a substrate, patterns disposed on the substrate, and an anti-contamination layer disposed on the patterns. The anti-contamination layer includes at least one graphene layer. Methods of fabricating a semiconductor device including the same are also provided.
Abstract translation: 本发明构思提供了一种光掩模，其包括基板，设置在基板上的图案，以及设置在图案上的抗污染层。 抗污染层包括至少一个石墨烯层。 还提供了制造包括该半导体器件的半导体器件的方法。
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公开(公告)号：US12125942B2
公开(公告)日：2024-10-22
申请号：US17352708
申请日：2021-06-21
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Youngjo Tak , Joosung Kim , Jonguk Seo , Sungjin Ahn , Donggun Lee , Jeongwook Lee , Youngjin Choi , Yongseok Choi , Jonghoon Ha
CPC classification number: H01L33/14 , H01L33/385 , H01L33/44
Abstract: A semiconductor light emitting device is provided. The device includes a light emitting structure stack including a first conductive semiconductor layer, a second conductive semiconductor layer, and an active layer arranged between the first conductive semiconductor layer and the second conductive semiconductor layer; a first electrode electrically connected to the first conductive semiconductor layer; a second electrode electrically connected to the second conductive semiconductor layer; and a field control structure on a sidewall of the light emitting structure stack, the field control structure including a field control electrode on a sidewall of the active layer; and a dielectric layer between the field control electrode and the active layer.
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公开(公告)号：US20240021756A1
公开(公告)日：2024-01-18
申请号：US18222223
申请日：2023-07-14
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Youngjin Choi , Donggun Lee , Punjae Choi
CPC classification number: H01L33/325 , H01L33/12 , H01L33/06
Abstract: A nitride semiconductor light emitting device includes an active layer provided between P-type and N-type nitride semiconductor layers, a first strain reducing layer including first InGaN films and first GaN films alternately stacked between the N-type nitride semiconductor layer and the active layer, and a second strain reducing layer including a second InGaN film and a second GaN film alternately stacked between the first strain reducing layer and the active layer. The active layer includes an InGaN well layer, a barrier layer, an AlGaN layer between the InGaN well layer and the barrier layer, and an intermediate lattice layer between the InGaN well layer and the AlGaN layer The intermediate lattice layer including a nitride single crystal having a lattice larger than a first lattice of the InGaN well layer and smaller than a second lattice of the AlGaN layer.
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Patent Agency Ranking
公开(公告)号：US20240021145A1
公开(公告)日：2024-01-18
申请号：US18222155
申请日：2023-07-14
Applicant: Samsung Electronics Co., Ltd.
Inventor： Donggun Lee , Punjae Choi , Youngjin Choi
IPC: G09G3/32
CPC classification number: G09G3/32 , G09G2300/0842 , G09G2320/0633 , G09G2320/0247
Abstract: A display apparatus includes a display panel including a plurality of pixels each having red, green, and blue LEDs; a display panel driver applying a current to each of the LEDs; a memory storing current intensity information according to target luminance of each of the LEDs; and a processor controlling the display panel driver to apply a current to each of the LEDs based on the current intensity information, wherein the processor is configured to control the display panel driver to apply an additional current to the green LED when a target luminance of the red LED is smaller than a predetermined luminance.
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公开(公告)号：US11747289B2
公开(公告)日：2023-09-05
申请号：US17509862
申请日：2021-10-25
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Donggun Lee
Abstract: A system of measuring an image of a pattern in a high NA scanning-type extreme ultra-violet (EUV) mask is disclosed. The system may include a light source generating an EUV light; an toroidal mirror; an flat mirror allowing light, which is reflected by the toroidal mirror, to be incident into the mask; an beam splitter; a light detection part; an anamorphic zone-plate lens focusing a transmitted portion of a light emitted from the beam splitter on the mask; a stage; and an anamorphic photo sensor, which is configured to measure an energy of a reflected portion of the coherent EUV light, is composed of a detector array, and has different sizes from each other in horizontal and vertical directions of an incidence surface of the detector array.
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公开(公告)号：US20240125709A1
公开(公告)日：2024-04-18
申请号：US18317387
申请日：2023-05-15
Applicant: Samsung Electronics Co., Ltd.
Inventor： Donggun Lee , Jaewon Lee , Jinwoo Ahn , Juntaek Oh , Eunsoo Hwang
CPC classification number: G01N21/8806 , G01N21/47 , G01N21/55 , G01N21/9501 , G01N2021/8845
Abstract: A semiconductor measurement apparatus includes an illuminator configured to output light having a first wavelength band and light having a second wavelength band, different from the first wavelength band, a stage on which a test object is positioned, a camera configured to receive light reflected or scattered from the test object or transmitted through the test object, and a controller configured to control the illuminator and the camera, and to measure, based on information indicated by the light received by the camera, a plurality of structures included in the test object. The controller is configured to set an exposure time of the camera to a first exposure time while the illuminator outputs the light having the first wavelength band, and to set the exposure time of the camera to a second exposure time, different from the first exposure time, while the illuminator outputs the light having the second wavelength band.
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公开(公告)号：US11914282B2
公开(公告)日：2024-02-27
申请号：US17509454
申请日：2021-10-25
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Donggun Lee
CPC classification number: G03F1/24 , G01N21/9501 , G03F7/7085 , G03F7/70483 , G01N2201/021 , G01N2201/0636 , G01N2201/06113
Abstract: A system of measuring an image of a pattern in a scanning type EUV mask may include a high-power laser output unit including a flat mirror and a spherical mirror, which are used to focus a high-power femto-second laser on a gas cell; a coherent EUV light generating portion generating a coherent EUV light; a pin-hole, a graphene filter, and a zirconium (Zr) filter; a stage; an x-ray spherical mirror configured to focus a coherent EUV light; a zone-plate lens placed between the stage and the x-ray spherical mirror; an x-ray flat mirror placed between the zone-plate lens and the x-ray spherical mirror; an order sorting aperture (OSA) placed on the stage and configured to transmit only a first-order diffraction light of the focused coherent EUV light; and a detector portion placed on the stage.
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公开(公告)号：US11784285B2
公开(公告)日：2023-10-10
申请号：US17022496
申请日：2020-09-16
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Youngjin Choi , Joosung Kim , Jonguk Seo , Sungjin Ahn , Donggun Lee , Jeongwook Lee , Yongseok Choi , Youngjo Tak , Jonghoon Ha
CPC classification number: H01L33/20 , H01L27/156 , H01L33/387 , H01L33/42 , H01L21/0254 , H01L33/12
Abstract: A three-dimensionally structured semiconductor light emitting diode includes a first conductivity-type semiconductor rod having integral first and second portions, the first portion defining a first surface, the second portion defining a second surface opposite the first surface, and a side surface between the first and second surfaces, an active layer and a second conductivity-type semiconductor layer on the side surface of the first conductivity-type semiconductor rod, the active layer and the second conductivity-type semiconductor layer being on the second portion of the first conductivity-type semiconductor rod, an insulating cap layer on the second surface of the first conductivity-type semiconductor rod, a transparent electrode layer on the second conductivity-type semiconductor layer, and a passivation layer on the transparent electrode layer and exposing a portion of the transparent electrode layer, the passivation layer extending to cover ends of the active layer and the second conductivity-type semiconductor layer adjacent to the first surface.
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