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公开(公告)号：US20240184192A1
公开(公告)日：2024-06-06
申请号：US18441665
申请日：2024-02-14
Applicant: Samsung Electronics Co., Ltd.
Inventor： Hakseung Han , Sanguk Park , Jongju Park , Raewon Yi
IPC: G03F1/24 , B23K26/06 , H01L21/268
CPC classification number: G03F1/24 , B23K26/06 , H01L21/268
Abstract: A laser annealing method performed on a reflective photomask may include preparing a reflective photomask including a pattern area and a border area surrounding the pattern area and irradiating a laser beam onto the border area of the reflective photomask. The irradiating of the laser beam may include split-irradiating a plurality of laser beam spots onto the border area. Each of the plurality of laser beam spots may be shaped using a beam shaper. The beam shaper may include a blind area, a transparent area at a center of the blind area, and a semitransparent area between the blind area and the transparent area. Each of the plurality of laser beam spots may include a center portion passing through the transparent area and having a uniform energy profile and an edge portion passing through the semitransparent area and having an inclined energy profile.
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公开(公告)号：US11934092B2
公开(公告)日：2024-03-19
申请号：US18048949
申请日：2022-10-24
Applicant: Samsung Electronics Co., Ltd.
Inventor： Hakseung Han , Sanguk Park , Jongju Park , Raewon Yi
IPC: G03F1/24 , B23K26/06 , H01L21/268
CPC classification number: G03F1/24 , B23K26/06 , H01L21/268
Abstract: A laser annealing method performed on a reflective photomask may include preparing a reflective photomask including a pattern area and a border area surrounding the pattern area and irradiating a laser beam onto the border area of the reflective photomask. The irradiating of the laser beam may include split-irradiating a plurality of laser beam spots onto the border area. Each of the plurality of laser beam spots may be shaped using a beam shaper. The beam shaper may include a blind area, a transparent area at a center of the blind area, and a semitransparent area between the blind area and the transparent area. Each of the plurality of laser beam spots may include a center portion passing through the transparent area and having a uniform energy profile and an edge portion passing through the semitransparent area and having an inclined energy profile.
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公开(公告)号：US11852583B2
公开(公告)日：2023-12-26
申请号：US18179662
申请日：2023-03-07
Applicant: Samsung Electronics Co., Ltd.
Inventor： Jongju Park , Raewon Yi , Hakseung Han , Seongsue Kim
CPC classification number: G01N21/41 , G01J9/00 , G01N21/956 , G03F1/22 , G03F1/24 , G03F1/84 , G01N2021/335 , G01N2021/95676 , G01N2201/061 , G01N2201/0636
Abstract: An apparatus and a method for correctly measuring a phase of an extreme ultraviolet (EUV) mask and a method of fabricating an EUV mask including the method are described. The apparatus for measuring the phase of the EUV mask includes an EUV light source configured to generate and output EUV light, at least one mirror configured to reflect the EUV light as reflected EUV light incident on an EUV mask to be measured, a mask stage on which the EUV mask is arranged, a detector configured to receive the EUV light reflected from the EUV mask, to obtain a two-dimensional (2D) image, and to measure reflectivity and diffraction efficiency of the EUV mask, and a processor configured to determine a phase of the EUV mask by using the reflectivity and diffraction efficiency of the EUV mask.
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公开(公告)号：US11635371B2
公开(公告)日：2023-04-25
申请号：US17036855
申请日：2020-09-29
Applicant: Samsung Electronics Co., Ltd.
Inventor： Jongju Park , Raewon Yi , Hakseung Han , Seongsue Kim
Abstract: An apparatus and a method for correctly measuring a phase of an extreme ultraviolet (EUV) mask and a method of fabricating an EUV mask including the method are described. The apparatus for measuring the phase of the EUV mask includes an EUV light source configured to generate and output EUV light, at least one mirror configured to reflect the EUV light as reflected EUV light incident on an EUV mask to be measured, a mask stage on which the EUV mask is arranged, a detector configured to receive the EUV light reflected from the EUV mask, to obtain a two-dimensional (2D) image, and to measure reflectivity and diffraction efficiency of the EUV mask, and a processor configured to determine a phase of the EUV mask by using the reflectivity and diffraction efficiency of the EUV mask.
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公开(公告)号：US11506968B2
公开(公告)日：2022-11-22
申请号：US16911601
申请日：2020-06-25
Applicant: Samsung Electronics Co., Ltd.
Inventor： Hakseung Han , Sanguk Park , Jongju Park , Raewon Yi
IPC: G21K5/00 , G03F1/24 , B23K26/06 , H01L21/268
Abstract: A laser annealing method performed on a reflective photomask may include preparing a reflective photomask including a pattern area and a border area surrounding the pattern area and irradiating a laser beam onto the border area of the reflective photomask. The irradiating of the laser beam may include split-irradiating a plurality of laser beam spots onto the border area. Each of the plurality of laser beam spots may be shaped using a beam shaper. The beam shaper may include a blind area, a transparent area at a center of the blind area, and a semitransparent area between the blind area and the transparent area. Each of the plurality of laser beam spots may include a center portion passing through the transparent area and having a uniform energy profile and an edge portion passing through the semitransparent area and having an inclined energy profile.
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Patent Agency Ranking
公开(公告)号：US20210293701A1
公开(公告)日：2021-09-23
申请号：US17036855
申请日：2020-09-29
Applicant: Samsung Electronics Co., Ltd.
Inventor： Jongju Park , Raewon Yi , Hakseung Han , Seongsue Kim
Abstract: An apparatus and a method for correctly measuring a phase of an extreme ultraviolet (EUV) mask and a method of fabricating an EUV mask including the method are described. The apparatus for measuring the phase of the EUV mask includes an EUV light source configured to generate and output EUV light, at least one mirror configured to reflect the EUV light as reflected EUV light incident on an EUV mask to be measured, a mask stage on which the EUV mask is arranged, a detector configured to receive the EUV light reflected from the EUV mask, to obtain a two-dimensional (2D) image, and to measure reflectivity and diffraction efficiency of the EUV mask, and a processor configured to determine a phase of the EUV mask by using the reflectivity and diffraction efficiency of the EUV mask.
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公开(公告)号：US20230236124A1
公开(公告)日：2023-07-27
申请号：US18179662
申请日：2023-03-07
Applicant: Samsung Electronics Co., Ltd.
Inventor： Jongju Park , Raewon Yi , Hakseung Han , Seongsue Kim
CPC classification number: G01N21/41 , G01J9/00 , G01N21/956 , G03F1/22 , G03F1/24 , G03F1/84 , G01N2021/335 , G01N2021/95676 , G01N2201/061 , G01N2201/0636
Abstract: An apparatus and a method for correctly measuring a phase of an extreme ultraviolet (EUV) mask and a method of fabricating an EUV mask including the method are described. The apparatus for measuring the phase of the EUV mask includes an EUV light source configured to generate and output EUV light, at least one mirror configured to reflect the EUV light as reflected EUV light incident on an EUV mask to be measured, a mask stage on which the EUV mask is arranged, a detector configured to receive the EUV light reflected from the EUV mask, to obtain a two-dimensional (2D) image, and to measure reflectivity and diffraction efficiency of the EUV mask, and a processor configured to determine a phase of the EUV mask by using the reflectivity and diffraction efficiency of the EUV mask.
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公开(公告)号：US20230073206A1
公开(公告)日：2023-03-09
申请号：US18048949
申请日：2022-10-24
Applicant: Samsung Electronics Co., Ltd.
Inventor： Hakseung Han , Sanguk Park , Jongju Park , Raewon Yi
Abstract: A laser annealing method performed on a reflective photomask may include preparing a reflective photomask including a pattern area and a border area surrounding the pattern area and irradiating a laser beam onto the border area of the reflective photomask. The irradiating of the laser beam may include split-irradiating a plurality of laser beam spots onto the border area. Each of the plurality of laser beam spots may be shaped using a beam shaper. The beam shaper may include a blind area, a transparent area at a center of the blind area, and a semitransparent area between the blind area and the transparent area. Each of the plurality of laser beam spots may include a center portion passing through the transparent area and having a uniform energy profile and an edge portion passing through the semitransparent area and having an inclined energy profile.
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公开(公告)号：US20210223680A1
公开(公告)日：2021-07-22
申请号：US16911601
申请日：2020-06-25
Applicant: Samsung Electronics Co., Ltd.
Inventor： Hakseung Han , Sanguk Park , Jongju Park , Raewon Yi
Abstract: A laser annealing method performed on a reflective photomask may include preparing a reflective photomask including a pattern area and a border area surrounding the pattern area and irradiating a laser beam onto the border area of the reflective photomask. The irradiating of the laser beam may include split-irradiating a plurality of laser beam spots onto the border area. Each of the plurality of laser beam spots may be shaped using a beam shaper. The beam shaper may include a blind area, a transparent area at a center of the blind area, and a semitransparent area between the blind area and the transparent area. Each of the plurality of laser beam spots may include a center portion passing through the transparent area and having a uniform energy profile and an edge portion passing through the semitransparent area and having an inclined energy profile.
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公开(公告)号：US20210033959A1
公开(公告)日：2021-02-04
申请号：US15931709
申请日：2020-05-14
Applicant: Samsung Electronics Co., Ltd.
Inventor： Hakseung Han , Sanguk Park , Jongju Park , Raewon Yi
Abstract: Disclosed are photomask manufacturing methods and semiconductor device fabrication methods. The photomask manufacturing method includes forming a reflective layer on a mask substrate having an image region and an edge region surrounding the image region, forming an absorption pattern on the reflective layer, forming a black border by irradiating a first laser beam to the reflective layer and the absorption pattern on the edge region, using a photomask having the black border to provide a test substrate with an extreme ultraviolet (EUV) beam to form a test pattern, obtaining a critical dimension correction map of the test pattern, and using the critical dimension correction map to irradiate a second laser beam to the reflective layer on a portion of the image region to form an annealed region that is thicker than the black border.
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