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公开(公告)号：US20240184192A1
公开(公告)日：2024-06-06
申请号：US18441665
申请日：2024-02-14
Applicant: Samsung Electronics Co., Ltd.
Inventor： Hakseung Han , Sanguk Park , Jongju Park , Raewon Yi
IPC: G03F1/24 , B23K26/06 , H01L21/268
CPC classification number: G03F1/24 , B23K26/06 , H01L21/268
Abstract: A laser annealing method performed on a reflective photomask may include preparing a reflective photomask including a pattern area and a border area surrounding the pattern area and irradiating a laser beam onto the border area of the reflective photomask. The irradiating of the laser beam may include split-irradiating a plurality of laser beam spots onto the border area. Each of the plurality of laser beam spots may be shaped using a beam shaper. The beam shaper may include a blind area, a transparent area at a center of the blind area, and a semitransparent area between the blind area and the transparent area. Each of the plurality of laser beam spots may include a center portion passing through the transparent area and having a uniform energy profile and an edge portion passing through the semitransparent area and having an inclined energy profile.
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公开(公告)号：US11934092B2
公开(公告)日：2024-03-19
申请号：US18048949
申请日：2022-10-24
Applicant: Samsung Electronics Co., Ltd.
Inventor： Hakseung Han , Sanguk Park , Jongju Park , Raewon Yi
IPC: G03F1/24 , B23K26/06 , H01L21/268
CPC classification number: G03F1/24 , B23K26/06 , H01L21/268
Abstract: A laser annealing method performed on a reflective photomask may include preparing a reflective photomask including a pattern area and a border area surrounding the pattern area and irradiating a laser beam onto the border area of the reflective photomask. The irradiating of the laser beam may include split-irradiating a plurality of laser beam spots onto the border area. Each of the plurality of laser beam spots may be shaped using a beam shaper. The beam shaper may include a blind area, a transparent area at a center of the blind area, and a semitransparent area between the blind area and the transparent area. Each of the plurality of laser beam spots may include a center portion passing through the transparent area and having a uniform energy profile and an edge portion passing through the semitransparent area and having an inclined energy profile.
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公开(公告)号：US11852583B2
公开(公告)日：2023-12-26
申请号：US18179662
申请日：2023-03-07
Applicant: Samsung Electronics Co., Ltd.
Inventor： Jongju Park , Raewon Yi , Hakseung Han , Seongsue Kim
CPC classification number: G01N21/41 , G01J9/00 , G01N21/956 , G03F1/22 , G03F1/24 , G03F1/84 , G01N2021/335 , G01N2021/95676 , G01N2201/061 , G01N2201/0636
Abstract: An apparatus and a method for correctly measuring a phase of an extreme ultraviolet (EUV) mask and a method of fabricating an EUV mask including the method are described. The apparatus for measuring the phase of the EUV mask includes an EUV light source configured to generate and output EUV light, at least one mirror configured to reflect the EUV light as reflected EUV light incident on an EUV mask to be measured, a mask stage on which the EUV mask is arranged, a detector configured to receive the EUV light reflected from the EUV mask, to obtain a two-dimensional (2D) image, and to measure reflectivity and diffraction efficiency of the EUV mask, and a processor configured to determine a phase of the EUV mask by using the reflectivity and diffraction efficiency of the EUV mask.
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公开(公告)号：US11562477B2
公开(公告)日：2023-01-24
申请号：US17189893
申请日：2021-03-02
Applicant: Samsung Electronics Co., Ltd.
Inventor： Minho Kim , Hakseung Han , Jiyoung Kim , Jinback Park
Abstract: An apparatus and method of measuring pattern uniformity, and a method of manufacturing a mask by using the measurement method are provided. The measurement apparatus includes a light source configured to generate and output light, a stage configured to support a measurement target, an optical system configured to transfer the light, output from the light source, to the measurement target supported on the stage, and a first detector configured to detect light reflected and diffracted by the measurement target, or diffracted by passing through the measurement target, wherein the first detector is configured to detect a pupil image of a pupil plane and to measure pattern uniformity of an array area of the measurement target on the basis of intensity of at least one of zero-order light and 1st-order light of the pupil image.
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公开(公告)号：US12260539B2
公开(公告)日：2025-03-25
申请号：US18093030
申请日：2023-01-04
Applicant: Samsung Electronics Co., Ltd.
Inventor： Minho Kim , Hakseung Han , Jiyoung Kim , Jinback Park
Abstract: An apparatus and method of measuring pattern uniformity, and a method of manufacturing a mask by using the measurement method are provided. The measurement apparatus includes a light source configured to generate and output light, a stage configured to support a measurement target, an optical system configured to transfer the light, output from the light source, to the measurement target supported on the stage, and a first detector configured to detect light reflected and diffracted by the measurement target, or diffracted by passing through the measurement target, wherein the first detector is configured to detect a pupil image of a pupil plane and to measure pattern uniformity of an array area of the measurement target on the basis of intensity of at least one of zero-order light and 1st-order light of the pupil image.
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Patent Agency Ranking
公开(公告)号：US11635371B2
公开(公告)日：2023-04-25
申请号：US17036855
申请日：2020-09-29
Applicant: Samsung Electronics Co., Ltd.
Inventor： Jongju Park , Raewon Yi , Hakseung Han , Seongsue Kim
Abstract: An apparatus and a method for correctly measuring a phase of an extreme ultraviolet (EUV) mask and a method of fabricating an EUV mask including the method are described. The apparatus for measuring the phase of the EUV mask includes an EUV light source configured to generate and output EUV light, at least one mirror configured to reflect the EUV light as reflected EUV light incident on an EUV mask to be measured, a mask stage on which the EUV mask is arranged, a detector configured to receive the EUV light reflected from the EUV mask, to obtain a two-dimensional (2D) image, and to measure reflectivity and diffraction efficiency of the EUV mask, and a processor configured to determine a phase of the EUV mask by using the reflectivity and diffraction efficiency of the EUV mask.
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公开(公告)号：US11506968B2
公开(公告)日：2022-11-22
申请号：US16911601
申请日：2020-06-25
Applicant: Samsung Electronics Co., Ltd.
Inventor： Hakseung Han , Sanguk Park , Jongju Park , Raewon Yi
IPC: G21K5/00 , G03F1/24 , B23K26/06 , H01L21/268
Abstract: A laser annealing method performed on a reflective photomask may include preparing a reflective photomask including a pattern area and a border area surrounding the pattern area and irradiating a laser beam onto the border area of the reflective photomask. The irradiating of the laser beam may include split-irradiating a plurality of laser beam spots onto the border area. Each of the plurality of laser beam spots may be shaped using a beam shaper. The beam shaper may include a blind area, a transparent area at a center of the blind area, and a semitransparent area between the blind area and the transparent area. Each of the plurality of laser beam spots may include a center portion passing through the transparent area and having a uniform energy profile and an edge portion passing through the semitransparent area and having an inclined energy profile.
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公开(公告)号：US20210293701A1
公开(公告)日：2021-09-23
申请号：US17036855
申请日：2020-09-29
Applicant: Samsung Electronics Co., Ltd.
Inventor： Jongju Park , Raewon Yi , Hakseung Han , Seongsue Kim
Abstract: An apparatus and a method for correctly measuring a phase of an extreme ultraviolet (EUV) mask and a method of fabricating an EUV mask including the method are described. The apparatus for measuring the phase of the EUV mask includes an EUV light source configured to generate and output EUV light, at least one mirror configured to reflect the EUV light as reflected EUV light incident on an EUV mask to be measured, a mask stage on which the EUV mask is arranged, a detector configured to receive the EUV light reflected from the EUV mask, to obtain a two-dimensional (2D) image, and to measure reflectivity and diffraction efficiency of the EUV mask, and a processor configured to determine a phase of the EUV mask by using the reflectivity and diffraction efficiency of the EUV mask.
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公开(公告)号：US20230236124A1
公开(公告)日：2023-07-27
申请号：US18179662
申请日：2023-03-07
Applicant: Samsung Electronics Co., Ltd.
Inventor： Jongju Park , Raewon Yi , Hakseung Han , Seongsue Kim
CPC classification number: G01N21/41 , G01J9/00 , G01N21/956 , G03F1/22 , G03F1/24 , G03F1/84 , G01N2021/335 , G01N2021/95676 , G01N2201/061 , G01N2201/0636
Abstract: An apparatus and a method for correctly measuring a phase of an extreme ultraviolet (EUV) mask and a method of fabricating an EUV mask including the method are described. The apparatus for measuring the phase of the EUV mask includes an EUV light source configured to generate and output EUV light, at least one mirror configured to reflect the EUV light as reflected EUV light incident on an EUV mask to be measured, a mask stage on which the EUV mask is arranged, a detector configured to receive the EUV light reflected from the EUV mask, to obtain a two-dimensional (2D) image, and to measure reflectivity and diffraction efficiency of the EUV mask, and a processor configured to determine a phase of the EUV mask by using the reflectivity and diffraction efficiency of the EUV mask.
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10.发明公开公开(公告)号：US20230142328A1
公开(公告)日：2023-05-11
申请号：US18093030
申请日：2023-01-04
Applicant: Samsung Electronics Co., Ltd.
Inventor： Minho Kim , Hakseung Han , Jiyoung Kim , Jinback Park
CPC classification number: G06T7/0006 , G02B27/14 , G01N21/9501 , G06T2207/30148
Abstract: An apparatus and method of measuring pattern uniformity, and a method of manufacturing a mask by using the measurement method are provided. The measurement apparatus includes a light source configured to generate and output light, a stage configured to support a measurement target, an optical system configured to transfer the light, output from the light source, to the measurement target supported on the stage, and a first detector configured to detect light reflected and diffracted by the measurement target, or diffracted by passing through the measurement target, wherein the first detector is configured to detect a pupil image of a pupil plane and to measure pattern uniformity of an array area of the measurement target on the basis of intensity of at least one of zero-order light and 1st-order light of the pupil image.
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