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    SEMICONDUCTOR DEVICE INCLUDING FIN-FET
    11.
    发明申请
    SEMICONDUCTOR DEVICE INCLUDING FIN-FET 有权

    公开(公告)号：US20210104613A1

    公开(公告)日：2021-04-08

    申请号：US17127230

    申请日：2020-12-18

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Chang Woo NOH ,  Seung Min SONG ,  Geum Jong BAE ,  Dong Il BAE

    IPC: H01L29/417 ,  H01L29/66 ,  H01L21/768 ,  H01L29/06 ,  H01L29/78

    Abstract: A semiconductor device including a fin field effect transistor (fin-FET) includes active fins disposed on a substrate, isolation layers on both sides of the active fins, a gate structure formed to cross the active fins and the isolation layers, source/drain regions on the active fins on sidewalls of the gate structure, a first interlayer insulating layer on the isolation layers in contact with portions of the sidewalls of the gate structure and portions of surfaces of the source/drain regions, an etch stop layer configured to overlap the first interlayer insulating layer, the sidewalls of the gate structure, and the source/drain regions, and contact plugs formed to pass through the etch stop layer to contact the source/drain regions. The source/drain regions have main growth portions in contact with upper surfaces of the active fins.

    SEMICONDUCTOR DEVICE
    13.
    发明公开
    SEMICONDUCTOR DEVICE 审中-公开

    公开(公告)号：US20240047463A1

    公开(公告)日：2024-02-08

    申请号：US18131548

    申请日：2023-04-06

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Dong Hoon HWANG ,  Seung Min SONG ,  Min Chan GWAK

    IPC: H01L27/12 ,  H01L21/84

    CPC classification number: H01L27/1207 ,  H01L21/84 ,  H01L21/823481

    Abstract: In some embodiments, a semiconductor device includes a first active pattern extended in a first horizontal direction on a substrate, a second active pattern extended in the first horizontal direction on the substrate, a first bottom gate electrode extended in a second horizontal direction on the first active pattern, a first upper gate electrode extended in the second horizontal direction on the first bottom gate electrode, a second bottom gate electrode extended in the second horizontal direction on the second active pattern, a second upper gate electrode extended in the second horizontal direction on the second bottom gate electrode, and a first gate cut comprising a first portion isolating the first bottom gate electrode from the second bottom gate electrode and a second portion isolating the first upper gate electrode from the second upper gate electrode. A width of the second portion exceeds a width of the first portion.

    SEMICONDUCTOR DEVICE
    14.
    发明公开
    SEMICONDUCTOR DEVICE 审中-公开

    公开(公告)号：US20230378264A1

    公开(公告)日：2023-11-23

    申请号：US18091603

    申请日：2022-12-30

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Seung Min SONG ,  Nam Hyun LEE

    IPC: H01L29/06 ,  H01L29/786 ,  H01L29/423

    CPC classification number: H01L29/0673 ,  H01L29/78696 ,  H01L29/42392

    Abstract: A semiconductor device includes a substrate extending a first direction and a second direction perpendicular to the first direction, an active pattern that protrudes from the substrate in a third direction perpendicular to the first direction and the second direction, a first plurality of lower nanosheets, a second plurality of lower nanosheets stacked spaced apart from the first plurality of lower nanosheets in the first direction, a first plurality of upper nanosheets spaced apart from the first plurality of lower nanosheets in the third direction, and a second plurality of upper nanosheets spaced apart from the second plurality of lower nanosheets in the third direction. A first upper gate electrode surrounding the first plurality of upper nanosheets. A second upper gate electrode surrounding the second plurality of upper nanosheets. A width of the first plurality of upper nanosheets is different from a width of the second plurality of upper nanosheets.

    SEMICONDUCTOR DEVICE
    15.
    发明申请
    SEMICONDUCTOR DEVICE 有权

    公开(公告)号：US20220231127A1

    公开(公告)日：2022-07-21

    申请号：US17715273

    申请日：2022-04-07

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Jung Gil YANG ,  Seung Min SONG ,  Soo Jin JEONG ,  Dong Il BAE ,  Bong Seok SUH

    IPC: H01L29/08 ,  H01L29/04 ,  H01L29/786

    Abstract: Provided is a semiconductor device comprising an active region on a substrate and including first and second sidewalls extending in a first direction and an epitaxial pattern on the active region, wherein the epitaxial pattern includes first and second epitaxial sidewalls extending from the first and second sidewalls, respectively, the first epitaxial sidewall includes a first epitaxial lower sidewall, a first epitaxial upper sidewall, and a first epitaxial connecting sidewall connecting the first epitaxial lower sidewall and the first epitaxial upper sidewall, the second epitaxial sidewall includes a second epitaxial lower sidewall, a second epitaxial upper sidewall, and a second epitaxial connecting sidewall connecting the second epitaxial lower sidewall and the second epitaxial upper sidewall, a distance between the first and second epitaxial upper sidewalls decreases away from the active region, and the first and second epitaxial lower sidewalls extend in parallel to a top surface of the substrate.

    SEMICONDUCTOR DEVICE
    16.
    发明申请
    SEMICONDUCTOR DEVICE 有权

    公开(公告)号：US20220140075A1

    公开(公告)日：2022-05-05

    申请号：US17575918

    申请日：2022-01-14

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Woo Cheol SHIN ,  Sun Wook KIM ,  Seung Min SONG ,  Nam Hyun LEE

    IPC: H01L29/06 ,  H01L29/10 ,  H01L29/08 ,  H01L29/423 ,  H01L27/092

    Abstract: A semiconductor device includes a substrate having a first region and a second region, first and second nanowires disposed sequentially on the substrate in the first region, and extending respectively in a first direction, third and fourth nanowires disposed sequentially on the substrate in the second region, and extending respectively in the first direction, a first inner spacer between the first nanowire and the second nanowire, and including hydrogen of a first hydrogen mole fraction, and a second inner spacer between the third nanowire and the fourth nanowire, and including hydrogen of a second hydrogen mole fraction that is greater than the first hydrogen mole fraction.

    SEMICONDUCTOR DEVICE
    17.
    发明申请
    SEMICONDUCTOR DEVICE 有权

    公开(公告)号：US20210399108A1

    公开(公告)日：2021-12-23

    申请号：US17467660

    申请日：2021-09-07

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Jung Gil YANG ,  Seung Min SONG ,  Soo Jin JEONG ,  Dong Il BAE ,  Bong Seok SUH

    IPC: H01L29/423 ,  H01L27/092 ,  H01L29/78 ,  H01L29/786 ,  H01L29/06 ,  H01L27/088 ,  H01L29/51 ,  H01L29/49 ,  H01L27/12

    Abstract: A semiconductor device having a gate-all-around structure includes a first fin pattern and a second fin pattern separated by a first trench and extending in a first direction, a first nanosheet on the first fin pattern, a second nanosheet on the second fin pattern, a first fin liner extending along at least a portion of a sidewall and a bottom surface of the first trench, a first field insulation layer disposed on the first fin liner and filling a portion of the first trench, and a first gate structure overlapping an end portion of the first fin pattern and including a first gate spacer. A height from the bottom surface of the first trench to a lower surface of the first gate spacer is greater than a height from the bottom surface of the first trench to an upper surface of the first field insulation layer.

    SEMICONDUCTOR DEVICE
    18.
    发明申请
    SEMICONDUCTOR DEVICE 有权

    公开(公告)号：US20210036106A1

    公开(公告)日：2021-02-04

    申请号：US16776677

    申请日：2020-01-30

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Woo Cheol SHIN ,  Sun Wook KIM ,  Seung Min SONG ,  Nam Hyun LEE

    IPC: H01L29/06 ,  H01L29/08 ,  H01L29/423 ,  H01L29/10 ,  H01L27/092

    Abstract: A semiconductor device includes a substrate having a first region and a second region, first and second nanowires disposed sequentially on the substrate in the first region, and extending respectively in a first direction, third and fourth nanowires disposed sequentially on the substrate in the second region, and extending respectively in the first direction, a first inner spacer between the first nanowire and the second nanowire, and including hydrogen of a first hydrogen mole fraction, and a second inner spacer between the third nanowire and the fourth nanowire, and including hydrogen of a second hydrogen mole fraction that is greater than the first hydrogen mole fraction.

    SEMICONDUCTOR DEVICE
    19.
    发明申请
    SEMICONDUCTOR DEVICE 审中-公开

    公开(公告)号：US20190115424A1

    公开(公告)日：2019-04-18

    申请号：US15964170

    申请日：2018-04-27

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Woo Seok PARK ,  Seung Min SONG ,  Jung Gil YANG ,  Geum Jong BAE ,  Dong Il BAE

    IPC: H01L29/06 ,  H01L29/417 ,  H01L29/66 ,  H01L29/78

    Abstract: A semiconductor device including a transistor disposed on a first region of a substrate, the transistor including source/drain regions, a plurality of channel layers spaced apart from each other in a direction perpendicular to an upper surface of the substrate while connecting the source/drain regions, respectively, a gate electrode surrounding each of the plurality of channel layers, and a gate insulator between the gate electrode and the plurality of channel layers; and a non-active component disposed on a second region of the substrate, the non-active component including a fin structure including an a plurality of first semiconductor patterns alternately stacked with a plurality of second semiconductor patterns, an epitaxial region adjacent to the fin structure, a non-active electrode intersecting the fin structure, and a blocking insulation film between the non-active electrode and the fin structure.

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