公开(公告)号：US20190296107A1

公开(公告)日：2019-09-26

申请号：US16423641

申请日：2019-05-28

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jung Gil YANG ,  Dong II BAE ,  Chang Woo SOHN ,  Seung Min SONG ,  Dong Hun LEE

IPC: H01L29/06 ,  H01L29/423 ,  H01L29/10 ,  H01L21/8238 ,  H01L27/092 ,  H01L29/66 ,  H01L27/088 ,  H01L27/02 ,  H01L21/8234 ,  H01L29/165 ,  H01L29/08 ,  H01L29/786

Abstract: A semiconductor device and a fabricating method thereof are provided. The semiconductor device includes a substrate, a first nanowire spaced apart from a first region of the substrate, a first gate electrode surrounding a periphery of the first nanowire, a second nanowire spaced apart from a second region of the substrate and extending in a first direction and having a first width in a second direction intersecting the first direction, a supporting pattern contacting the second nanowire and positioned under the second nanowire, and a second gate electrode extending in the second direction and surrounding the second nanowire and the supporting pattern.

公开(公告)号：US20210135001A1

公开(公告)日：2021-05-06

申请号：US17140786

申请日：2021-01-04

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Junggil YANG ,  Seungmin SONG ,  Geumjong BAE ,  Dong II BAE

IPC: H01L29/78 ,  H01L29/423 ,  H01L29/417 ,  H01L29/66 ,  H01L29/786

Abstract: A semiconductor device includes a channel pattern including a first semiconductor pattern and a second semiconductor pattern, which are sequentially stacked on a substrate, and a gate electrode that extends in a first direction and crosses the channel pattern. The gate electrode includes a first portion interposed between the substrate and the first semiconductor pattern and a second portion interposed between the first and second semiconductor patterns. A maximum width in a second direction of the first portion is greater than a maximum width in the second direction of the second portion, and a maximum length in the second direction of the second semiconductor pattern is less than a maximum length in the second direction of the first semiconductor pattern.

公开(公告)号：US20170352684A1

公开(公告)日：2017-12-07

申请号：US15429719

申请日：2017-02-10

Applicant: Samsung Electronics Co., Ltd.

Inventor： Junggil YANG ,  Dong II BAE ,  Geumjong BAE ,  Seungmin SONG ,  Jongho LEE

IPC: H01L27/12 ,  H01L27/02 ,  H01L29/78

CPC classification number: H01L27/1203 ,  H01L27/0207 ,  H01L29/42392 ,  H01L29/66742 ,  H01L29/66772 ,  H01L29/7856 ,  H01L29/78654 ,  H01L29/78684 ,  H01L29/78696 ,  H01L2029/7858

Abstract: A semiconductor device includes an insulating layer on a substrate, a first channel pattern on the insulating layer and contacting the insulating layer, second channel patterns on the first channel pattern and being horizontally spaced apart from each other, a gate pattern on the insulating layer and surrounding the second channel patterns, and a source/drain pattern between the second channel patterns.

公开(公告)号：US20190067490A1

公开(公告)日：2019-02-28

申请号：US15900175

申请日：2018-02-20

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jung Gil Yang ,  Woo Seok PARK ,  Dong Chan SUH ,  Seung Min SONG ,  Geum Jong BAE ,  Dong II BAE

IPC: H01L29/786 ,  H01L29/423 ,  H01L29/08 ,  H01L29/161 ,  H01L29/10

Abstract: A semiconductor device includes a substrate, a plurality of channel layers stacked on the substrate, a gate electrode surrounding the plurality of channel layers, and embedded source/drain layers on opposing sides of the gate electrode. The embedded source/drain layers each have a first region and a second region on the first region. The second region has a plurality of layers having different compositions.

公开(公告)号：US20180158908A1

公开(公告)日：2018-06-07

申请号：US15877667

申请日：2018-01-23

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jung Gil YANG ,  Dong II BAE ,  Chang Woo SOHN ,  Seung Min SONG ,  Dong Hun LEE

IPC: H01L29/06 ,  H01L29/66 ,  H01L29/423 ,  H01L29/165 ,  H01L29/10 ,  H01L29/08 ,  H01L21/8234 ,  H01L27/092 ,  H01L27/088 ,  H01L27/02 ,  H01L21/8238

CPC classification number: H01L29/0673 ,  H01L21/823431 ,  H01L21/823456 ,  H01L21/823807 ,  H01L21/823821 ,  H01L21/82385 ,  H01L27/0207 ,  H01L27/0883 ,  H01L27/0886 ,  H01L27/092 ,  H01L27/0922 ,  H01L27/0924 ,  H01L29/0669 ,  H01L29/0847 ,  H01L29/1033 ,  H01L29/165 ,  H01L29/42392 ,  H01L29/66545 ,  H01L29/785 ,  H01L29/78696

Abstract: A semiconductor device and a fabricating method thereof are provided. The semiconductor device includes a substrate, a first nanowire spaced apart from a first region of the substrate, a first gate electrode surrounding a periphery of the first nanowire, a second nanowire spaced apart from a second region of the substrate and extending in a first direction and having a first width in a second direction intersecting the first direction, a supporting pattern contacting the second nanowire and positioned under the second nanowire, and a second gate electrode extending in the second direction and surrounding the second nanowire and the supporting pattern.