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    SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME
    1.
    发明申请
    SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME 有权

    公开(公告)号：US20250040215A1

    公开(公告)日：2025-01-30

    申请号：US18439634

    申请日：2024-02-12

    Applicant: SAMSUNG ELECTRONICS CO, LTD.

    Inventor： Dong Hoon HWANG ,  Hyo Jin KIM ,  Myung II KANG ,  Tae Hyun RYU ,  Kyu Nam PARK ,  Woo Seok PARK

    IPC: H01L29/66 ,  H01L21/8234 ,  H01L27/088 ,  H01L29/06 ,  H01L29/08 ,  H01L29/423 ,  H01L29/775 ,  H01L29/786

    Abstract: A semiconductor device includes a lower pattern. A channel isolation structure and a field insulating layer contact the lower pattern. A gate structure is on the lower pattern, in contact with the channel isolation structure. A channel pattern is on the lower pattern, and includes sheet patterns, each being in contact with the channel isolation structure. A source/drain pattern contacts the channel pattern and the channel isolation structure. The channel isolation structure includes a first region contacting the gate structure and a second region contacting the source/drain pattern. The second region of the channel isolation structure includes portions whose widths increase as a distance from a bottom surface of the field insulating layer increases. A width of an uppermost portion of the channel isolation structure is greater than a width of a lowermost portion of the channel isolation structure

    SEMICONDUCTOR DEVICES
    2.
    发明申请
    SEMICONDUCTOR DEVICES 有权

    公开(公告)号：US20230112528A1

    公开(公告)日：2023-04-13

    申请号：US18046518

    申请日：2022-10-14

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： MYUNG GIL KANG ,  Dong Won KIM ,  Woo Seok PARK ,  Keun Hwi CHO ,  Sung Gi HUR

    IPC: H01L29/423 ,  H01L27/092 ,  H01L29/06 ,  H01L29/786

    Abstract: Semiconductor devices include a first active pattern including a first lower pattern extending in a first direction and a first sheet pattern spaced apart from the first lower pattern; and a first gate electrode on the first lower pattern, the first gate electrode extending in a second direction different from the first direction and surrounding the first sheet pattern, wherein the first lower pattern includes a first sidewall and a second sidewall opposite to each other, each of the first sidewall of the first lower pattern and the second sidewall of the first lower pattern extends in the first direction, the first gate electrode overlaps the first sidewall of the first lower pattern in the second direction by a first depth, the first gate electrode overlaps the second sidewall of the first lower pattern in the second direction by a second depth, and the first depth is different from the second depth.

    SEMICONDUCTOR DEVICE
    5.
    发明申请
    SEMICONDUCTOR DEVICE 审中-公开

    公开(公告)号：US20190115424A1

    公开(公告)日：2019-04-18

    申请号：US15964170

    申请日：2018-04-27

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Woo Seok PARK ,  Seung Min SONG ,  Jung Gil YANG ,  Geum Jong BAE ,  Dong Il BAE

    IPC: H01L29/06 ,  H01L29/417 ,  H01L29/66 ,  H01L29/78

    Abstract: A semiconductor device including a transistor disposed on a first region of a substrate, the transistor including source/drain regions, a plurality of channel layers spaced apart from each other in a direction perpendicular to an upper surface of the substrate while connecting the source/drain regions, respectively, a gate electrode surrounding each of the plurality of channel layers, and a gate insulator between the gate electrode and the plurality of channel layers; and a non-active component disposed on a second region of the substrate, the non-active component including a fin structure including an a plurality of first semiconductor patterns alternately stacked with a plurality of second semiconductor patterns, an epitaxial region adjacent to the fin structure, a non-active electrode intersecting the fin structure, and a blocking insulation film between the non-active electrode and the fin structure.

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