公开(公告)号：US10861934B2

公开(公告)日：2020-12-08

申请号：US16398719

申请日：2019-04-30

Applicant: Samsung Electronics Co., Ltd.

Inventor： Shigenobu Maeda ,  Hee-Soo Kang ,  Sang-Pil Sim ,  Soo-Hun Hong

IPC: H01L29/06 ,  H01L29/78 ,  H01L29/417 ,  H01L29/66 ,  B82Y10/00 ,  H01L21/8234 ,  H01L21/84 ,  H01L27/12 ,  H01L27/088 ,  H01L29/10 ,  H01L29/08 ,  H01L29/16 ,  H01L29/161 ,  H01L29/165 ,  H01L29/49 ,  H01L29/51 ,  H01L29/775

Abstract: A semiconductor device can include a field insulation layer including a planar major surface extending in first and second orthogonal directions and a protruding portion that protrudes a particular distance from the major surface relative to the first and second orthogonal directions. First and second multi-channel active fins can extend on the field insulation layer, and can be separated from one another by the protruding portion. A conductive layer can extend from an uppermost surface of the protruding portion to cross over the protruding portion between the first and second multi-channel active fins.

公开(公告)号：US20190259836A1

公开(公告)日：2019-08-22

申请号：US16398719

申请日：2019-04-30

Applicant: Samsung Electronics Co., Ltd.

Inventor： Shigenobu Maeda ,  Hee-Soo Kang ,  Sang-Pil Sim ,  Soo-Hun Hong

IPC: H01L29/06 ,  H01L29/78 ,  H01L29/417 ,  H01L29/49 ,  H01L29/08 ,  H01L29/16 ,  H01L29/161 ,  H01L29/165 ,  H01L29/10 ,  H01L21/84 ,  H01L21/8234 ,  B82Y10/00 ,  H01L27/12 ,  H01L27/088 ,  H01L29/51 ,  H01L29/66

Abstract: A semiconductor device can include a field insulation layer including a planar major surface extending in first and second orthogonal directions and a protruding portion that protrudes a particular distance from the major surface relative to the first and second orthogonal directions. First and second multi-channel active fins can extend on the field insulation layer, and can be separated from one another by the protruding portion. A conductive layer can extend from an uppermost surface of the protruding portion to cross over the protruding portion between the first and second multi-channel active fins.

公开(公告)号：US10319814B2

公开(公告)日：2019-06-11

申请号：US15467159

申请日：2017-03-23

Applicant: Samsung Electronics Co., Ltd.

Inventor： Shigenobu Maeda ,  Hee-Soo Kang ,  Sang-Pil Sim ,  Soo-Hun Hong

IPC: H01L29/06 ,  H01L29/78 ,  H01L29/417 ,  H01L29/66 ,  B82Y10/00 ,  H01L27/12 ,  H01L27/088 ,  H01L29/10 ,  H01L21/8234 ,  H01L21/84 ,  H01L29/08 ,  H01L29/16 ,  H01L29/161 ,  H01L29/165 ,  H01L29/49 ,  H01L29/51 ,  H01L29/775

Abstract: A semiconductor device can include a field insulation layer including a planar major surface extending in first and second orthogonal directions and a protruding portion that protrudes a particular distance from the major surface relative to the first and second orthogonal directions. First and second multi-channel active fins can extend on the field insulation layer, and can be separated from one another by the protruding portion. A conductive layer can extend from an uppermost surface of the protruding portion to cross over the protruding portion between the first and second multi-channel active fins.

公开(公告)号：US09379106B2

公开(公告)日：2016-06-28

申请号：US14504822

申请日：2014-10-02

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Soo-Hun Hong ,  Hee-Soo Kang ,  Hyun-Jo Kim ,  Sang-Pil Sim ,  Hee-Don Jung

IPC: H01L29/06 ,  H01L27/088 ,  H01L21/8234

CPC classification number: H01L29/66545 ,  H01L21/762 ,  H01L21/76229 ,  H01L21/823412 ,  H01L21/823425 ,  H01L21/823431 ,  H01L21/823481 ,  H01L21/823814 ,  H01L21/823821 ,  H01L21/823878 ,  H01L27/0886 ,  H01L27/0924 ,  H01L29/0649 ,  H01L29/0653 ,  H01L29/0847 ,  H01L29/1608 ,  H01L29/161 ,  H01L29/165 ,  H01L29/66795 ,  H01L29/7848 ,  H01L29/785

Abstract: A semiconductor device includes a substrate including first to third fins aligned in a first direction, a first trench arranged between the first fin and the second fin, and a second trench arranged between the second fin and the third fin. The semiconductor device further includes a first field insulating film arranged in the first trench, a second field insulating film formed in the second trench, a first dummy gate arranged on the first field insulating film, and a second dummy gate at least partly arranged on the second field insulating film. A lower surface of the second field insulating film is arranged to be lower than a lower surface of the first field insulating film.

Abstract translation: 一种半导体器件包括：衬底，包括沿第一方向排列的第一至第三鳍片，布置在第一鳍片和第二鳍片之间的第一沟槽，以及布置在第二鳍片和第三鳍片之间的第二沟槽。 半导体器件还包括布置在第一沟槽中的第一场绝缘膜，形成在第二沟槽中的第二场绝缘膜，布置在第一场绝缘膜上的第一虚栅极，以及至少部分地布置在第二沟槽上的第二虚栅极 第二场绝缘膜。 第二场绝缘膜的下表面被布置成低于第一场绝缘膜的下表面。

公开(公告)号：US20140353763A1

公开(公告)日：2014-12-04

申请号：US14287322

申请日：2014-05-27

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jae-Yup Chung ,  Hee-Soo Kang ,  Soo-Hun Hong

IPC: H01L27/088

CPC classification number: H01L27/0886 ,  H01L21/823431

Abstract: Semiconductor devices including fin-FETs and methods of forming the semiconductor devices are provided. The semiconductor devices may include a fin structure including a long side and a short side on a substrate, a first trench including a sidewall defined by the long side of the fin structure and a first field insulating layer in the first trench. The semiconductor devices may also include a second trench including a sidewall defined by the short side of the fin structure and a second field insulating layer in the second trench. A first distance between an uppermost surface of the fin structure and a lowermost surface of the first trench may be different from a second distance between the uppermost surface of the fin structure and a lowermost surface of the second trench.

Abstract translation: 提供了包括鳍式FET的半导体器件和形成半导体器件的方法。 半导体器件可以包括在衬底上包括长边和短边的鳍结构，包括由鳍结构的长边限定的侧壁的第一沟槽和在第一沟槽中的第一场绝缘层。 半导体器件还可以包括第二沟槽，其包括由鳍结构的短边限定的侧壁和在第二沟槽中的第二场绝缘层。 翅片结构的最上表面和第一沟槽的最下表面之间的第一距离可以不同于翅片结构的最上表面和第二沟槽的最下表面之间的第二距离。