公开(公告)号：US11011511B2

公开(公告)日：2021-05-18

申请号：US16167117

申请日：2018-10-22

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Dae-Lim Kang ,  Hyun-Jo Kim ,  Jong-Mil Youn ,  Soo-Hun Hong

IPC: H01L27/02 ,  H01L29/16 ,  H01L29/08 ,  H01L27/088 ,  H01L29/78 ,  H01L21/02

Abstract: An ESD protection device includes a substrate having an active fin extending in a first direction, a plurality of gate structures extending in a second direction at a given angle with respect to the first direction and partially covering the active fin, an epitaxial layer in a recess on a portion of the active fin between the gate structures, an impurity region under the epitaxial layer, and a contact plug contacting the epitaxial layer. A central portion of the impurity region is thicker than an edge portion of the impurity region, in the first direction. The contact plug lies over the central portion of the impurity region.

公开(公告)号：US20240213317A1

公开(公告)日：2024-06-27

申请号：US18596461

申请日：2024-03-05

Applicant: Samsung Electronics Co., Ltd.

Inventor： Shigenobu MAEDA ,  Hee-Soo Kang ,  Sang-Pil Sim ,  Soo-Hun Hong

IPC: H01L29/06 ,  B82Y10/00 ,  H01L21/8234 ,  H01L21/84 ,  H01L27/088 ,  H01L27/12 ,  H01L29/08 ,  H01L29/10 ,  H01L29/16 ,  H01L29/161 ,  H01L29/165 ,  H01L29/417 ,  H01L29/49 ,  H01L29/51 ,  H01L29/66 ,  H01L29/775 ,  H01L29/78

CPC classification number: H01L29/0692 ,  B82Y10/00 ,  H01L21/823431 ,  H01L21/845 ,  H01L27/0886 ,  H01L27/1211 ,  H01L29/0649 ,  H01L29/0653 ,  H01L29/0847 ,  H01L29/1037 ,  H01L29/1608 ,  H01L29/161 ,  H01L29/165 ,  H01L29/41791 ,  H01L29/4966 ,  H01L29/517 ,  H01L29/66795 ,  H01L29/7848 ,  H01L29/785 ,  H01L29/775

Abstract: A semiconductor device can include a field insulation layer including a planar major surface extending in first and second orthogonal directions and a protruding portion that protrudes a particular distance from the major surface relative to the first and second orthogonal directions. First and second multi-channel active fins can extend on the field insulation layer, and can be separated from one another by the protruding portion. A conductive layer can extend from an uppermost surface of the protruding portion to cross over the protruding portion between the first and second multi-channel active fins.

公开(公告)号：US20210066454A1

公开(公告)日：2021-03-04

申请号：US17098412

申请日：2020-11-15

Applicant: Samsung Electronics Co., Ltd.

Inventor： Shigenobu Maeda ,  Hee-Soo Kang ,  Sang-Pil Sim ,  Soo-Hun Hong

IPC: H01L29/06 ,  H01L29/78 ,  H01L29/417 ,  H01L29/66 ,  B82Y10/00 ,  H01L21/8234 ,  H01L21/84 ,  H01L27/12 ,  H01L27/088 ,  H01L29/10 ,  H01L29/08 ,  H01L29/16 ,  H01L29/161 ,  H01L29/165 ,  H01L29/49 ,  H01L29/51

Abstract: A semiconductor device can include a field insulation layer including a planar major surface extending in first and second orthogonal directions and a protruding portion that protrudes a particular distance from the major surface relative to the first and second orthogonal directions. First and second multi-channel active fins can extend on the field insulation layer, and can be separated from one another by the protruding portion. A conductive layer can extend from an uppermost surface of the protruding portion to cross over the protruding portion between the first and second multi-channel active fins.

公开(公告)号：US10002943B2

公开(公告)日：2018-06-19

申请号：US15164246

申请日：2016-05-25

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Soo-Hun Hong ,  Hee-Soo Kang ,  Hyun-Jo Kim ,  Sang-Pil Sim ,  Hee-Don Jung

IPC: H01L29/78 ,  H01L29/66 ,  H01L27/088 ,  H01L29/06 ,  H01L21/8238 ,  H01L27/092 ,  H01L29/08 ,  H01L29/16 ,  H01L29/161 ,  H01L21/762 ,  H01L21/8234 ,  H01L29/165

CPC classification number: H01L29/66545 ,  H01L21/762 ,  H01L21/76229 ,  H01L21/823412 ,  H01L21/823425 ,  H01L21/823431 ,  H01L21/823481 ,  H01L21/823814 ,  H01L21/823821 ,  H01L21/823878 ,  H01L27/0886 ,  H01L27/0924 ,  H01L29/0649 ,  H01L29/0653 ,  H01L29/0847 ,  H01L29/1608 ,  H01L29/161 ,  H01L29/165 ,  H01L29/66795 ,  H01L29/7848 ,  H01L29/785

Abstract: A semiconductor device includes a substrate including first to third fins aligned in a first direction, a first trench arranged between the first fin and the second fin, and a second trench arranged between the second fin and the third fin. The semiconductor device further includes a first field insulating film arranged in the first trench, a second field insulating film formed in the second trench, a first dummy gate arranged on the first field insulating film and a second dummy gate at least partly arranged on the second field insulating film. A lower surface of the second field insulating film is arranged to be lower than a lower surface of the first field insulating film.

公开(公告)号：US09299811B2

公开(公告)日：2016-03-29

申请号：US14519771

申请日：2014-10-21

Applicant: Samsung Electronics Co., Ltd.

Inventor： Wook-Je Kim ,  Jae-Yup Chung ,  Jong-Seo Hong ,  Cheol Kim ,  Hee-Soo Kang ,  Hyun-Jo Kim ,  Hee-Don Jeong ,  Soo-Hun Hong ,  Sang-Bom Kang ,  Myeong-Cheol Kim ,  Young-Su Chung

IPC: H01L29/66 ,  H01L21/8234 ,  H01L29/78 ,  H01L29/165

CPC classification number: H01L29/66795 ,  H01L21/823431 ,  H01L21/823481 ,  H01L29/165 ,  H01L29/66545 ,  H01L29/7848

Abstract: Semiconductor devices may include first and second fins that protrude from a substrate, extend in a first direction, and are separated from each other in the first direction. Semiconductor devices may also include a field insulating layer that is disposed between the first and second fins to extend in a second direction intersecting the first direction, an etch-stop layer pattern that is formed on the field insulating layer and a dummy gate structure that is formed on the etch-stop layer pattern.

Abstract translation: 半导体器件可以包括从基板突出的第一和第二鳍片，沿第一方向延伸，并且在第一方向上彼此分离。 半导体器件还可以包括场绝缘层，其设置在第一和第二鳍之间，沿与第一方向相交的第二方向延伸，形成在场绝缘层上的蚀刻停止层图案和伪栅极结构， 形成在蚀刻停止层图案上。

公开(公告)号：US20150147860A1

公开(公告)日：2015-05-28

申请号：US14519771

申请日：2014-10-21

Applicant: Samsung Electronics Co., Ltd.

Inventor： Wook-Je Kim ,  Jae-Yup Chung ,  Jong-Seo Hong ,  Cheol Kim ,  Hee-Soo Kang ,  Hyun-Jo Kim ,  Hee-Don Jeong ,  Soo-Hun Hong ,  Sang-Bom Kang ,  Myeong-Cheol Kim ,  Young-Su Chung

IPC: H01L29/66

CPC classification number: H01L29/66795 ,  H01L21/823431 ,  H01L21/823481 ,  H01L29/165 ,  H01L29/66545 ,  H01L29/7848

Abstract: Semiconductor devices may include first and second fins that protrude from a substrate, extend in a first direction, and are separated from each other in the first direction. Semiconductor devices may also include a field insulating layer that is disposed between the first and second fins to extend in a second direction intersecting the first direction, an etch-stop layer pattern that is formed on the field insulating layer and a dummy gate structure that is formed on the etch-stop layer pattern.

Abstract translation: 半导体器件可以包括从基板突出的第一和第二鳍片，沿第一方向延伸，并且在第一方向上彼此分离。 半导体器件还可以包括场绝缘层，其设置在第一和第二鳍之间，沿与第一方向相交的第二方向延伸，形成在场绝缘层上的蚀刻停止层图案和伪栅极结构， 形成在蚀刻停止层图案上。

公开(公告)号：US10269928B2

公开(公告)日：2019-04-23

申请号：US15717843

申请日：2017-09-27

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Soo-Hun Hong ,  Hee-Soo Kang ,  Hyun-Jo Kim ,  Sang-Pil Sim ,  Hee-Don Jung

IPC: H01L29/161 ,  H01L29/66 ,  H01L27/088 ,  H01L29/06 ,  H01L21/8234 ,  H01L21/8238 ,  H01L27/092 ,  H01L29/08 ,  H01L29/16 ,  H01L21/762 ,  H01L29/78 ,  H01L29/165

Abstract: A semiconductor device includes a substrate including first to third fins aligned in a first direction, a first trench arranged between the first fin and the second fin, and a second trench arranged between the second fin and the third fin. The semiconductor device further includes a first field insulating film arranged in the first trench, a second field insulating film formed in the second trench, a first dummy gate arranged on the first field insulating film and a second dummy gate at least partly arranged on the second field insulating film. A lower surface of the second field insulating film is arranged to be lower than a lower surface of the first field insulating film.

公开(公告)号：US08878309B1

公开(公告)日：2014-11-04

申请号：US14102897

申请日：2013-12-11

Applicant: Samsung Electronics Co., Ltd.

Inventor： Soo-Hun Hong ,  Hee-Soo Kang ,  Hyun-Jo Kim ,  Sang-Pil Sim ,  Hee-Don Jung

IPC: H01L29/78 ,  H01L27/088

CPC classification number: H01L27/0886 ,  H01L21/823412 ,  H01L21/823425 ,  H01L21/823431 ,  H01L21/823481

Abstract: A semiconductor device includes a substrate having first, second and third fins longitudinally aligned in a first direction. A first trench extends between the first and second fins, and a second trench extends between the second and third fins. A first portion of field insulating material is disposed in the first trench, and a second portion of field insulating material is disposed in the second trench. An upper surface of the second portion of the field insulating material is recessed in the second trench at a level below uppermost surfaces of the second and third fins. A first dummy gate is disposed on an upper surface of the first portion of the field insulating material, and a second dummy gate at least partially extends into the second trench to the upper surface of the second portion of the field insulating material.

Abstract translation: 半导体器件包括具有沿第一方向纵向排列的第一，第二和第三鳍片的衬底。 第一沟槽在第一和第二鳍之间延伸，第二沟槽在第二和第三鳍之间延伸。 场绝缘材料的第一部分设置在第一沟槽中，场绝缘材料的第二部分设置在第二沟槽中。 场绝缘材料的第二部分的上表面在第二沟槽中凹陷在第二和第三鳍片的最上表面以下的水平面处。 第一伪栅极设置在场绝缘材料的第一部分的上表面上，并且第二伪栅极至少部分地延伸到第二沟槽中至场绝缘材料的第二部分的上表面。

公开(公告)号：US12074157B2

公开(公告)日：2024-08-27

申请号：US17320477

申请日：2021-05-14

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Dae-Lim Kang ,  Hyun-Jo Kim ,  Jong-Mil Youn ,  Soo-Hun Hong

IPC: H01L27/02 ,  H01L21/02 ,  H01L27/088 ,  H01L29/08 ,  H01L29/16 ,  H01L29/78

CPC classification number: H01L27/0266 ,  H01L21/02293 ,  H01L27/0248 ,  H01L27/0886 ,  H01L29/0847 ,  H01L29/1608 ,  H01L29/7831 ,  H01L29/785

Abstract: An ESD protection device includes a substrate having an active fin extending in a first direction, a plurality of gate structures extending in a second direction at a given angle with respect to the first direction and partially covering the active fin, an epitaxial layer in a recess on a portion of the active fin between the gate structures, an impurity region under the epitaxial layer, and a contact plug contacting the epitaxial layer. A central portion of the impurity region is thicker than an edge portion of the impurity region, in the first direction. The contact plug lies over the central portion of the impurity region.

公开(公告)号：US11955517B2

公开(公告)日：2024-04-09

申请号：US17098412

申请日：2020-11-15

Applicant: Samsung Electronics Co., Ltd.

Inventor： Shigenobu Maeda ,  Hee-Soo Kang ,  Sang-Pil Sim ,  Soo-Hun Hong

IPC: H01L21/8234 ,  B82Y10/00 ,  H01L21/84 ,  H01L27/088 ,  H01L27/12 ,  H01L29/06 ,  H01L29/08 ,  H01L29/10 ,  H01L29/16 ,  H01L29/161 ,  H01L29/165 ,  H01L29/417 ,  H01L29/49 ,  H01L29/51 ,  H01L29/66 ,  H01L29/78 ,  H01L29/775

CPC classification number: H01L29/0692 ,  B82Y10/00 ,  H01L21/823431 ,  H01L21/845 ,  H01L27/0886 ,  H01L27/1211 ,  H01L29/0649 ,  H01L29/0653 ,  H01L29/0847 ,  H01L29/1037 ,  H01L29/1608 ,  H01L29/161 ,  H01L29/165 ,  H01L29/41791 ,  H01L29/4966 ,  H01L29/517 ,  H01L29/66795 ,  H01L29/7848 ,  H01L29/785 ,  H01L29/775

Abstract: A semiconductor device can include a field insulation layer including a planar major surface extending in first and second orthogonal directions and a protruding portion that protrudes a particular distance from the major surface relative to the first and second orthogonal directions. First and second multi-channel active fins can extend on the field insulation layer, and can be separated from one another by the protruding portion. A conductive layer can extend from an uppermost surface of the protruding portion to cross over the protruding portion between the first and second multi-channel active fins.