公开(公告)号：US11661550B2

公开(公告)日：2023-05-30

申请号：US17543197

申请日：2021-12-06

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sung Woo Kim ,  Jin A Kim ,  Tae Hyung Kim ,  Jeong Hee Lee ,  Eun Joo Jang

IPC: C09K11/88 ,  C09K11/56 ,  H01L51/50

CPC classification number: C09K11/883 ,  C09K11/565 ,  H01L51/502

Abstract: A quantum dot comprising a core comprising a first semiconductor nanocrystal comprising zinc, selenium, and optionally tellurium; and a shell disposed on the core and comprising a second semiconductor nanocrystal having a different composition from the first semiconductor nanocrystal, and comprising zinc and at least one of sulfur and selenium, wherein the shell comprises at least three branches extending from the core, wherein at least one of the branches has a length of greater than or equal to about 2 nm, the quantum dot emits blue light comprising a maximum emission peak at a wavelength of less than or equal to about 470 nm, a full width at half maximum (FWHM) of the maximum emission peak is less than about 35 nm, and the quantum dot does not comprise cadmium.

公开(公告)号：US11566345B2

公开(公告)日：2023-01-31

申请号：US16281232

申请日：2019-02-21

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jin A Kim ,  Yuho Won ,  Sung Woo Kim ,  Tae Hyung Kim ,  Jeong Hee Lee ,  Eun Joo Jang

IPC: B32B5/16 ,  B05D7/00 ,  B82Y20/00 ,  C30B29/48 ,  C01G9/08 ,  H01L51/50 ,  H01L33/28 ,  C09K11/02 ,  C09K11/56 ,  C09K11/88 ,  H01L33/06 ,  B82Y40/00

Abstract: A semiconductor nanocrystal particle, a production method thereof, and a light emitting device including the same. The semiconductor nanocrystal particle includes a core including a first semiconductor nanocrystal, a first shell surrounding the core, the first shell including a second semiconductor nanocrystal including a different composition from the first semiconductor nanocrystal, a second shell surrounding the first shell, the second shell including a third semiconductor nanocrystal including a different composition from the second semiconductor nanocrystal, wherein the first semiconductor nanocrystal includes zinc and sulfur; wherein the third semiconductor nanocrystal includes zinc and sulfur; wherein an energy bandgap of the second semiconductor nanocrystal is less than an energy bandgap of the first semiconductor nanocrystal and less than an energy bandgap of the third semiconductor nanocrystal; and wherein the semiconductor nanocrystal particle does not include cadmium.

公开(公告)号：US11563143B2

公开(公告)日：2023-01-24

申请号：US16998262

申请日：2020-08-20

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Yong Seok Han ,  Sung Woo Kim ,  Jin A Kim ,  Tae Hyung Kim ,  Kun Su Park ,  Yuho Won ,  Jeong Hee Lee ,  Eun Joo Jang ,  Hyo Sook Jang

IPC: H01L33/06 ,  H01L33/20 ,  H01L33/26 ,  C09K11/88 ,  C01B19/04

Abstract: A quantum dot including a core that includes a first semiconductor nanocrystal including zinc and selenium, and optionally sulfur and/or tellurium, and a shell that includes a second semiconductor nanocrystal including zinc, and at least one of sulfur or selenium is disclosed. The quantum dot has an average particle diameter of greater than or equal to about 13 nm, an emission peak wavelength in a range of about 440 nm to about 470 nm, and a full width at half maximum (FWHM) of an emission wavelength of less than about 25 nm. A method for preparing the quantum dot, a quantum dot-polymer composite including the quantum dot, and an electronic device including the quantum dot is also disclosed.

公开(公告)号：US10954440B2

公开(公告)日：2021-03-23

申请号：US16298108

申请日：2019-03-11

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Yuho Won ,  Sung Woo Kim ,  Jin A Kim ,  Jeong Hee Lee ,  Tae Hyung Kim ,  Eun Joo Jang

IPC: H01L51/50 ,  C09K11/88 ,  C09K11/02 ,  H05B33/14 ,  B82Y20/00 ,  B82Y40/00

Abstract: A quantum dot including: a core including a first semiconductor nanocrystal material including zinc, tellurium, and selenium; and a semiconductor nanocrystal shell disposed on the core, the semiconductor nanocrystal shell including zinc, selenium, and sulfur, wherein the quantum dot does not include cadmium, and in the quantum dot, a mole ratio of the sulfur with respect to the selenium is less than or equal to about 2.4:1. A production method of the quantum dot and an electronic device including the same are also disclosed.

公开(公告)号：US10818858B2

公开(公告)日：2020-10-27

申请号：US16058176

申请日：2018-08-08

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Tae Ho Kim ,  Chan Su Kim ,  Kun Su Park ,  Eun Joo Jang ,  Sung Woo Kim ,  Hongkyu Seo

IPC: H01L29/06 ,  H01L51/50 ,  H01L51/56 ,  H01L51/52 ,  H01L51/00

Abstract: An electroluminescent device and a display device including the same are disclosed. The electroluminescent device includes a first electrode, an electron transport layer disposed on the first electrode and including inorganic oxide particles, a self-assembled monolayer disposed on the electron transport layer, an emission layer disposed on the self-assembled monolayer and including light emitting particles, a hole transport layer disposed on the emission layer, and a second electrode disposed on the hole transport layer.

公开(公告)号：US10396306B2

公开(公告)日：2019-08-27

申请号：US15970252

申请日：2018-05-03

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sung Woo Kim ,  Tae Ho Kim ,  Kun Su Park ,  Chan Su Kim ,  Eun Joo Jang

IPC: H01L51/54 ,  H01L51/50 ,  G09G3/3208 ,  H05B33/20 ,  H01L51/52

Abstract: An electroluminescent device, a method of manufacturing the same, and a display device including the same are disclosed. The electroluminescent device electroluminescent device includes a first electrode; a hole transport layer disposed on the first electrode; an emission layer disposed on the hole transport layer and including at least two light emitting particles; a first electron transport layer disposed on the emission layer and including at least two inorganic-organic composite particles; a second electron transport layer disposed on the first electron transport layer and including at least two inorganic oxide particles; and a second electrode disposed on the second electron transport layer, wherein the first electron transport layer has a lower work function than the second electron transport layer.

公开(公告)号：US11982018B2

公开(公告)日：2024-05-14

申请号：US18052597

申请日：2022-11-04

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jin A Kim ,  Yuho Won ,  Sung Woo Kim ,  Tae Hyung Kim ,  Jeong Hee Lee ,  Eun Joo Jang

IPC: C30B29/40 ,  C01G9/08 ,  C09K11/02 ,  C09K11/56 ,  C09K11/88 ,  C30B29/48 ,  H01L33/06 ,  H01L33/28 ,  H10K50/115 ,  B82Y20/00 ,  B82Y40/00

CPC classification number: C30B29/48 ,  C01G9/08 ,  C09K11/02 ,  C09K11/565 ,  C09K11/883 ,  H01L33/06 ,  H01L33/28 ,  H10K50/115 ,  B82Y20/00 ,  B82Y40/00 ,  C01P2002/85 ,  C01P2004/04 ,  C01P2004/64

Abstract: A semiconductor nanocrystal particle, a production method thereof, and a light emitting device including the same. The semiconductor nanocrystal particle includes a core including a first semiconductor nanocrystal, a first shell surrounding the core, the first shell including a second semiconductor nanocrystal including a different composition from the first semiconductor nanocrystal, a second shell surrounding the first shell, the second shell including a third semiconductor nanocrystal including a different composition from the second semiconductor nanocrystal, wherein the first semiconductor nanocrystal includes zinc and sulfur; wherein the third semiconductor nanocrystal includes zinc and sulfur; wherein an energy bandgap of the second semiconductor nanocrystal is less than an energy bandgap of the first semiconductor nanocrystal and less than an energy bandgap of the third semiconductor nanocrystal; and wherein the semiconductor nanocrystal particle does not include cadmium.

公开(公告)号：US11659725B2

公开(公告)日：2023-05-23

申请号：US16921188

申请日：2020-07-06

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Heejae Lee ,  Sung Woo Kim ,  Eun Joo Jang ,  Dae Young Chung ,  Moon Gyu Han

IPC: H01L51/50

CPC classification number: H01L51/502 ,  H01L51/5056 ,  H01L51/5092

Abstract: A light emitting device includes: a first electrode and a second electrode with a surface facing the first electrode; an emission layer disposed between the first electrode and the second electrode and including a quantum dot (e.g., a plurality of quantum dots); and an electron auxiliary layer disposed between the emission layer and the second electrode. The electron auxiliary layer includes a first layer including a first metal oxide, and a second layer disposed on the first layer and including a second metal oxide. A roughness of an interface between the second layer and the second electrode is less than about 10 nm as determined by an electron microscopy analysis. An absolute value of a difference between a conduction band edge energy level of the second layer and a work function of the second electrode may be less than or equal to about 0.5 eV, and a conduction band edge energy level of the first layer may be less than the conduction band edge energy level of the second layer.

公开(公告)号：US11624027B2

公开(公告)日：2023-04-11

申请号：US17366429

申请日：2021-07-02

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sung Woo Kim ,  Eun Joo Jang ,  Hyo Sook Jang ,  Hwea Yoon Kim ,  Yuho Won

IPC: C09K11/88 ,  C09K11/56 ,  C01B19/00 ,  C01G9/08 ,  C09K11/62 ,  B82Y20/00 ,  H01L51/50 ,  B82Y40/00

Abstract: A quantum dot according to an embodiment includes a core including a first semiconductor nanocrystal including zinc, selenium, and tellurium and a semiconductor nanocrystal shell on the core, the semiconductor nanocrystal shell including a zinc chalcogenide, wherein the quantum dot does not include cadmium, the zinc chalcogenide includes zinc and selenium, the quantum dot further includes gallium and a primary amine having 5 or more carbon atoms, and the quantum dot is configured to emit light having a maximum emission peak in a range of greater than about 450 nanometers (nm) and less than or equal to about 480 nm by excitation light. A method of producing the quantum dot and an electronic device including the same are also disclosed.

公开(公告)号：US11581504B2

公开(公告)日：2023-02-14

申请号：US17132971

申请日：2020-12-23

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Tae Ho Kim ,  Sung Woo Kim ,  Eun Joo Jang ,  Dae Young Chung

IPC: H01L51/50 ,  H01L51/00 ,  H01L27/32

Abstract: An electroluminescent device comprising a first electrode and a second electrode facing each other, an emission layer disposed between the first electrode and the second electrode and including at least two light emitting particles, a hole transport layer disposed between the first electrode and the emission layer, and an electron transport layer disposed between the emission layer and the second electrode, wherein the electron transport layer comprises an inorganic layer disposed on the emission layer, the inorganic layer comprising a plurality of inorganic nanoparticles; and an organic layer directly disposed on at least a portion of the inorganic layer on a side opposite the emission layer, wherein a work function of the organic layer is greater than a work function of the inorganic layer.