公开(公告)号：US09099399B2

公开(公告)日：2015-08-04

申请号：US14467400

申请日：2014-08-25

Applicant: Samsung Electronics Co., Ltd.

Inventor： Joonsoo Park ,  Soonmok Ha ,  Eunshoo Han ,  Seongho Moon ,  Sung-Wook Hwang

IPC: H01L21/02 ,  H01L21/306 ,  H01L21/308 ,  H01L21/311

CPC classification number: H01L21/30604 ,  H01L21/0337 ,  H01L21/3086 ,  H01L21/3088 ,  H01L21/31111 ,  H01L21/31144 ,  H01L27/10852 ,  H01L27/11551 ,  H01L27/11578

Abstract: Methods of forming fine patterns for semiconductor devices are provided. A method may include sequentially forming a lower layer and a mask layer having first openings on a substrate, forming pillars to fill the first openings and protrude upward from a top surface of the mask layer, forming a block copolymer layer on the substrate with the pillars, performing a thermal treatment to the block copolymer layer to form a first block portion and second block portions, removing the second block portions to form guide openings exposing the mask layer, and etching the mask layer exposed by the guide openings to form second openings.

Abstract translation: 提供了形成用于半导体器件的精细图案的方法。 一种方法可以包括顺序地形成下层和在衬底上具有第一开口的掩模层，形成柱以填充第一开口并从掩模层的顶表面向上突出，在衬底上形成具有柱的嵌段共聚物层 对所述嵌段共聚物层进行热处理以形成第一嵌段部分和第二嵌段部分，除去所述第二嵌段部分以形成暴露所述掩模层的引导开口，以及蚀刻由所述引导开口露出的掩模层以形成第二开口。