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    IMAGE SENSOR AND METHOD OF MANUFACTURING THE SAME
    12.
    发明申请
    IMAGE SENSOR AND METHOD OF MANUFACTURING THE SAME 审中-公开

    公开(公告)号：US20190305049A1

    公开(公告)日：2019-10-03

    申请号：US16105259

    申请日：2018-08-20

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Kyungbae PARK ,  Wenxu XIANYU ,  Bonwon KOO ,  Takkyun RO ,  Changseung LEE

    IPC: H01L27/30 ,  H01L51/44 ,  H01L27/146

    Abstract: Provided are an image sensor and a method of manufacturing the same. The image sensor may include a plurality of light detection elements arranged to correspond to a plurality of pixel regions, a color filter layer on the plurality of light detection elements and including a plurality of color filters arranged to correspond to the plurality of light detection elements, and a photodiode device portion on the color filter layer. The photodiode device portion may have curved structures. The photodiode device portion may include an organic material-based photodiode layer, a first electrode between the photodiode layer and the color filter layer, and a second electrode on the photodiode layer. The photodiode device portion may have curved convex structures respectively corresponding to the plurality of color filters.

    PHOTOELECTRIC DEVICES AND IMAGE SENSORS AND ELECTRONIC DEVICES
    13.
    发明申请
    PHOTOELECTRIC DEVICES AND IMAGE SENSORS AND ELECTRONIC DEVICES 审中-公开

    公开(公告)号：US20190173032A1

    公开(公告)日：2019-06-06

    申请号：US16178691

    申请日：2018-11-02

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Kyung Bae PARK ,  Takkyun RO ,  Kiyohiko TSUTSUMI ,  Chul Joon HEO ,  Yong Wan JIN

    IPC: H01L51/42 ,  H01L51/44 ,  H01L27/30 ,  H01L51/00

    Abstract: A photoelectric device includes a first photoelectric conversion layer including a heterojunction that includes a first p-type semiconductor and a first n-type semiconductor, a second photoelectric conversion layer on the first photoelectric conversion layer and including a heterojunction that includes a second p-type semiconductor and a second n-type semiconductor. A peak absorption wavelength (λmax1) of the first photoelectric conversion layer and a peak absorption wavelength (λmax2) of the second photoelectric conversion layer are included in a common wavelength spectrum of light that is one wavelength spectrum of light of a red wavelength spectrum of light, a green wavelength spectrum of light, a blue wavelength spectrum of light, a near infrared wavelength spectrum of light, or an ultraviolet wavelength spectrum of light, and a light-absorption full width at half maximum (FWHM) of the second photoelectric conversion layer is narrower than an FWHM of the first photoelectric conversion layer.

    PHOTOELECTRIC DEVICES AND IMAGE SENSORS AND ELECTRONIC DEVICES
    15.
    发明申请
    PHOTOELECTRIC DEVICES AND IMAGE SENSORS AND ELECTRONIC DEVICES 有权

    公开(公告)号：US20210273186A1

    公开(公告)日：2021-09-02

    申请号：US17306116

    申请日：2021-05-03

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Kyung Bae PARK ,  Takkyun RO ,  Kiyohiko TSUTSUMI ,  Chul Joon HEO ,  Yong Wan JIN

    IPC: H01L51/42 ,  H01L27/146 ,  H01L51/00 ,  H01L27/30 ,  H01L51/44

    Abstract: A photoelectric device includes a first photoelectric conversion layer including a heterojunction that includes a first p-type semiconductor and a first n-type semiconductor, a second photoelectric conversion layer on the first photoelectric conversion layer and including a heterojunction that includes a second p-type semiconductor and a second n-type semiconductor. A peak absorption wavelength (λmax1) of the first photoelectric conversion layer and a peak absorption wavelength (λmax2) of the second photoelectric conversion layer are included in a common wavelength spectrum of light that is one wavelength spectrum of light of a red wavelength spectrum of light, a green wavelength spectrum of light, a blue wavelength spectrum of light, a near infrared wavelength spectrum of light, or an ultraviolet wavelength spectrum of light, and a light-absorption full width at half maximum (FWHM) of the second photoelectric conversion layer is narrower than an FWHM of the first photoelectric conversion layer.

    PHOTOELECTRIC DIODES AND ORGANIC SENSORS AND ELECTRONIC DEVICES
    16.
    发明申请
    PHOTOELECTRIC DIODES AND ORGANIC SENSORS AND ELECTRONIC DEVICES 审中-公开

    公开(公告)号：US20200235168A1

    公开(公告)日：2020-07-23

    申请号：US16536879

    申请日：2019-08-09

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Kwang Hee LEE ,  Takkyun RO ,  Dong-Seok LEEM ,  Ohkyu KWON ,  Bum Woo PARK ,  Hyesung CHOI

    IPC: H01L27/32 ,  H01L27/28

    Abstract: A photoelectric diode includes a first electrode and a second electrode facing each other; a photoelectric conversion layer between the first electrode and the second electrode, and a compensation layer on the photoelectric conversion layer, the compensation layer being configured to compensate absorption and reflection of light. The photoelectric conversion layer is associated with a first optical spectrum having a light-absorption peak at a first wavelength and a reflection peak at a second wavelength, the first wavelength and the second wavelength both within a wavelength region of about 750 nm to about 1200 nm. The photoelectric diode is associated with a second optical spectrum having a light-absorption peak at a third wavelength, the third wavelength is within the wavelength region of about 750 nm to about 1200 nm, the third wavelength different from the first wavelength.

    SOLAR CELL
    20.
    发明申请
    SOLAR CELL 审中-公开
    太阳能电池

    公开(公告)号：US20140261650A1

    公开(公告)日：2014-09-18

    申请号：US14196129

    申请日：2014-03-04

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Yun Gi KIM ,  Takkyun RO

    IPC: H01L31/0352

    CPC classification number: H01L31/035218 ,  H01L31/03845 ,  H01L31/06 ,  H01L31/07 ,  Y02E10/50

    Abstract: A solar cell includes a first electrode, a second electrode spaced apart from the first electrode, and a light absorption layer between the first electrode and the second electrode. The light absorption layer includes a first absorption sublayer, a second absorption sublayer and a third absorption sublayer. The first absorption sublayer contacts the first electrode and includes a first quantum dot, the second absorption sublayer is between the first absorption sublayer and the third absorption sublayer and includes a second quantum dot, and the third absorption sublayer contacts the second electrode and includes a third quantum dot. The second quantum dot is larger than the first quantum dot and the third quantum dot.

    Abstract translation: 太阳能电池包括第一电极，与第一电极间隔开的第二电极，以及在第一电极和第二电极之间的光吸收层。 光吸收层包括第一吸收子层，第二吸收子层和第三吸收子层。 所述第一吸收子层与所述第一电极接触并且包括第一量子点，所述第二吸收子层位于所述第一吸收子层和所述第三吸收子层之间，并且包括第二量子点，所述第三吸收子层与所述第二电极接触， 量子点 第二量子点大于第一量子点和第三量子点。

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