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公开(公告)号：US20210143287A1
公开(公告)日：2021-05-13
申请号：US17037859
申请日：2020-09-30
Applicant: Samsung Electronics Co., Ltd. , UNIVERSITY-INDUSTRY COOPERATION GROUP OF KYUNG HEE UNIVERSITY
Inventor： Jong Won CHUNG , Sukho CHOI , Sung HEO , Sung KIM , YongChul KIM
IPC: H01L31/0224 , H01L33/26 , H01L31/032 , H01L31/0232 , H01L31/18 , H01L33/50 , H01L33/00 , H01L33/36
Abstract: Provided are an optoelectronic apparatus including an on-chip optoelectronic diode capable of receiving and emitting light, and a method of manufacturing the same.
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公开(公告)号：US20190341427A1
公开(公告)日：2019-11-07
申请号：US16398947
申请日：2019-04-30
Applicant: Samsung Electronics Co., Ltd.
Inventor： Sung HEO , Takkyun RO , Kyung Bae PARK , Gyeongsu PARK , Joo Ho LEE
Abstract: Disclosed is an optoelectronic device including a first electrode and a second electrode facing each other; a metal layer pattern disposed between the first electrode and the second electrode; a buffer layer covering the metal layer pattern; and a photoelectric conversion layer on the buffer layer. The metal layer pattern includes a metal having a negative dielectric constant and the buffer layer includes a compound selected from silicon nitride (SiNx, 0
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Patent Agency Ranking
公开(公告)号：US20230352548A1
公开(公告)日：2023-11-02
申请号：US18219525
申请日：2023-07-07
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Eunae CHO , Dongjin LEE , Ji Eun LEE , Kyoung-Ho JUNG , Dong Su KO , Yongsu KIM , Jiho YOO , Sung HEO , Hyun PARK , Satoru YAMADA , Moonyoung JEONG , Sungjin KIM , Gyeongsu PARK , Han Jin LIM
IPC: H01L29/49 , H01L21/28 , H01L29/423 , H01L29/51
CPC classification number: H01L29/4236 , H01L21/28088 , H01L29/4966 , H01L29/513 , H01L29/517
Abstract: A semiconductor device and a method of manufacturing the same are provided. The semiconductor device includes a substrate including a trench. The semiconductor device further includes a gate electrode disposed in the trench, and a gate insulating film disposed between the substrate and the gate electrode. The gate electrode includes a gate conductor and a metal element, and an effective work function of the gate electrode is less than an effective work function of the gate conductor.
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公开(公告)号：US20240243164A1
公开(公告)日：2024-07-18
申请号：US18409957
申请日：2024-01-11
Applicant: Samsung Electronics Co., Ltd.
Inventor： Jooho LEE , Yong-Hee CHO , Jinhong KIM , Changsoo LEE , Sung HEO
CPC classification number: H01L28/65 , H01L28/75 , H01L28/91 , H10B12/315
Abstract: Provided are a capacitor, a method of preparing the capacitor, and an electronic device including the capacitor, the capacitor including a lower electrode, an upper electrode spaced apart from the lower electrode, a dielectric between the lower electrode and the upper electrode, a first layer between the lower electrode and the dielectric, and a second layer between the dielectric and the upper electrode, wherein the dielectric comprises TiO2 having a rutile phase and is doped with magnesium, the first layer includes a material having a higher work function than that of a material included in the lower electrode, and the second layer includes a dielectric protective material.
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5.发明申请OPTOELECTRONIC DEVICE, AND IMAGE SENSOR AND ELECTRONIC DEVICE INCLUDING THE SAME 有权光电装置，图像传感器和包括其的电子装置公开(公告)号：US20160233351A1
公开(公告)日：2016-08-11
申请号：US14744938
申请日：2015-06-19
Applicant: Samsung Electronics Co., Ltd.
Inventor： Seong Heon KIM , Dongjin YUN , Sung HEO , Kyu Sik KIM , Satoh RYUICHI , Gyeongsu PARK , Hyung-Ik LEE
IPC: H01L31/0224 , H01L31/18 , H01L27/146
CPC classification number: H01L31/022408 , H01L31/18 , H01L51/0046 , H01L51/0077 , H01L51/4253 , Y02E10/549 , Y02P70/521
Abstract: An optoelectronic device includes a first electrode and a second electrode facing each other, a photoelectric conversion layer between the first electrode and the second electrode, and a buffer layer between at least one of the photoelectric conversion layer and the first electrode, and the photoelectric conversion layer and the second electrode, the buffer layer including one of MoOx1 (2.58≦x1
Abstract translation: 光电子器件包括彼此面对的第一电极和第二电极，第一电极和第二电极之间的光电转换层，以及光电转换层和第一电极中的至少一个之间的缓冲层，以及光电转换 所述缓冲层包括MoOx1（2.58≤x1<3.0），ZnOx2（1.0≤x2<2.0），TiOx3（1.5≤x3<2.0），VOx4（1.5≤x4<2.0），TaOx5（ 1.0≤x5<2.5），WOx6（2.0
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公开(公告)号：US20240147735A1
公开(公告)日：2024-05-02
申请号：US18187151
申请日：2023-03-21
Applicant: Samsung Electronics Co., Ltd.
Inventor： Sung HEO , Hajun SUNG , Seongyong PARK , Wooyoung YANG , Dongjin YUN
Abstract: A switching device including a first electrode layer, a second electrode layer arranged to face the first electrode layer, and a selection layer arranged between the first electrode layer and the second electrode layer, wherein the first electrode layer is doped with at least one of manganese (Mn), iron (Fe), niobium (Nb), molybdenum (Mo), technetium (Tc), ruthenium (Ru), rhodium (Rh), hafnium (Hf), tantalum (Ta), tungsten (W), rhenium (Re), iridium (Ir), or platinum (Pt), may be provided.
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公开(公告)号：US20160260813A1
公开(公告)日：2016-09-08
申请号：US14854272
申请日：2015-09-15
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Eunae CHO , Dongjin LEE , Ji Eun LEE , Kyoung-Ho JUNG , Dong Su KO , Yongsu KIM , Jiho YOO , Sung HEO , Hyun PARK , Satoru YAMADA , Moonyoung JEONG , Sungjin KIM , Gyeongsu PARK , Han Jin LIM
IPC: H01L29/423 , H01L29/51 , H01L21/28 , H01L29/49
CPC classification number: H01L29/4236 , H01L21/28088 , H01L29/4966 , H01L29/513 , H01L29/517
Abstract: A semiconductor device and a method of manufacturing the same are provided. The semiconductor device includes a substrate including a trench. The semiconductor device further includes a gate electrode disposed in the trench, and a gate insulating film disposed between the substrate and the gate electrode. The gate electrode includes a gate conductor and a metal element, and an effective work function of the gate electrode is less than an effective work function of the gate conductor.
Abstract translation: 提供半导体器件及其制造方法。 半导体器件包括包括沟槽的衬底。 半导体器件还包括设置在沟槽中的栅极电极和设置在衬底和栅电极之间的栅极绝缘膜。 栅电极包括栅极导体和金属元件，并且栅电极的有效功函数小于栅极导体的有效功函数。
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