公开(公告)号：US20160233351A1

公开(公告)日：2016-08-11

申请号：US14744938

申请日：2015-06-19

Applicant: Samsung Electronics Co., Ltd.

Inventor： Seong Heon KIM ,  Dongjin YUN ,  Sung HEO ,  Kyu Sik KIM ,  Satoh RYUICHI ,  Gyeongsu PARK ,  Hyung-Ik LEE

IPC: H01L31/0224 ,  H01L31/18 ,  H01L27/146

CPC classification number: H01L31/022408 ,  H01L31/18 ,  H01L51/0046 ,  H01L51/0077 ,  H01L51/4253 ,  Y02E10/549 ,  Y02P70/521

Abstract: An optoelectronic device includes a first electrode and a second electrode facing each other, a photoelectric conversion layer between the first electrode and the second electrode, and a buffer layer between at least one of the photoelectric conversion layer and the first electrode, and the photoelectric conversion layer and the second electrode, the buffer layer including one of MoOx1 (2.58≦x1

Abstract translation: 光电子器件包括彼此面对的第一电极和第二电极，第一电极和第二电极之间的光电转换层，以及光电转换层和第一电极中的至少一个之间的缓冲层，以及光电转换 所述缓冲层包括MoOx1（2.58≤x1<3.0），ZnOx2（1.0≤x2<2.0），TiOx3（1.5≤x3<2.0），VOx4（1.5≤x4<2.0），TaOx5（ 1.0≤x5<2.5），WOx6（2.0

公开(公告)号：US20160260813A1

公开(公告)日：2016-09-08

申请号：US14854272

申请日：2015-09-15

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Eunae CHO ,  Dongjin LEE ,  Ji Eun LEE ,  Kyoung-Ho JUNG ,  Dong Su KO ,  Yongsu KIM ,  Jiho YOO ,  Sung HEO ,  Hyun PARK ,  Satoru YAMADA ,  Moonyoung JEONG ,  Sungjin KIM ,  Gyeongsu PARK ,  Han Jin LIM

IPC: H01L29/423 ,  H01L29/51 ,  H01L21/28 ,  H01L29/49

CPC classification number: H01L29/4236 ,  H01L21/28088 ,  H01L29/4966 ,  H01L29/513 ,  H01L29/517

Abstract: A semiconductor device and a method of manufacturing the same are provided. The semiconductor device includes a substrate including a trench. The semiconductor device further includes a gate electrode disposed in the trench, and a gate insulating film disposed between the substrate and the gate electrode. The gate electrode includes a gate conductor and a metal element, and an effective work function of the gate electrode is less than an effective work function of the gate conductor.

Abstract translation: 提供半导体器件及其制造方法。 半导体器件包括包括沟槽的衬底。 半导体器件还包括设置在沟槽中的栅极电极和设置在衬底和栅电极之间的栅极绝缘膜。 栅电极包括栅极导体和金属元件，并且栅电极的有效功函数小于栅极导体的有效功函数。

公开(公告)号：US20190341427A1

公开(公告)日：2019-11-07

申请号：US16398947

申请日：2019-04-30

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sung HEO ,  Takkyun RO ,  Kyung Bae PARK ,  Gyeongsu PARK ,  Joo Ho LEE

IPC: H01L27/30 ,  H01L51/42

Abstract: Disclosed is an optoelectronic device including a first electrode and a second electrode facing each other; a metal layer pattern disposed between the first electrode and the second electrode; a buffer layer covering the metal layer pattern; and a photoelectric conversion layer on the buffer layer. The metal layer pattern includes a metal having a negative dielectric constant and the buffer layer includes a compound selected from silicon nitride (SiNx, 0

公开(公告)号：US20230352548A1

公开(公告)日：2023-11-02

申请号：US18219525

申请日：2023-07-07

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Eunae CHO ,  Dongjin LEE ,  Ji Eun LEE ,  Kyoung-Ho JUNG ,  Dong Su KO ,  Yongsu KIM ,  Jiho YOO ,  Sung HEO ,  Hyun PARK ,  Satoru YAMADA ,  Moonyoung JEONG ,  Sungjin KIM ,  Gyeongsu PARK ,  Han Jin LIM

IPC: H01L29/49 ,  H01L21/28 ,  H01L29/423 ,  H01L29/51

CPC classification number: H01L29/4236 ,  H01L21/28088 ,  H01L29/4966 ,  H01L29/513 ,  H01L29/517

Abstract: A semiconductor device and a method of manufacturing the same are provided. The semiconductor device includes a substrate including a trench. The semiconductor device further includes a gate electrode disposed in the trench, and a gate insulating film disposed between the substrate and the gate electrode. The gate electrode includes a gate conductor and a metal element, and an effective work function of the gate electrode is less than an effective work function of the gate conductor.

公开(公告)号：US20160359202A1

公开(公告)日：2016-12-08

申请号：US15071059

申请日：2016-03-15

Applicant: Samsung Electronics Co., Ltd.

Inventor： Woosung JEON ,  Jeoyoung SHIM ,  Gyeongsu PARK ,  Jooho LEE ,  Heegoo KIM ,  Jaewoo LEE

IPC: H01M10/42 ,  H02J7/00 ,  H01M4/131 ,  H01M10/0525 ,  H01M4/525

CPC classification number: H01M10/4257 ,  H01M4/131 ,  H01M4/505 ,  H01M4/525 ,  H01M6/40 ,  H01M10/0436 ,  H01M10/0525 ,  H01M10/0585 ,  H01M2004/025 ,  H01M2004/028 ,  H01M2010/0495 ,  H01M2010/4271 ,  H01M2010/4278 ,  H01M2220/30 ,  H02J7/0068

Abstract: A secondary battery structure includes a first electrode structure including a plurality of first electrode elements spaced apart from each other and disposed in a form of an array, a second electrode structure spaced apart from the first electrode structure and including a second electrode element, and an electrolyte which allows ions to move between the first electrode structure and second electrode structure, where the first electrode structure and the second electrode structure define a cathode and an anode, and the number of the first electrode elements and the number of the second electrode element are different from each other.

Abstract translation: 二次电池结构包括：第一电极结构，包括彼此间隔开并且以阵列形式设置的多个第一电极元件;与第一电极结构间隔开并包括第二电极元件的第二电极结构;以及 电解质，其允许离子在第一电极结构和第二电极结构之间移动，其中第一电极结构和第二电极结构限定阴极和阳极，并且第一电极元件的数量和第二电极元件的数量是 彼此不同。