公开(公告)号：US20230009575A1

公开(公告)日：2023-01-12

申请号：US17690371

申请日：2022-03-09

Applicant: Samsung Electronics Co., Ltd.

Inventor： Minhee CHO ,  Mintae RYU ,  Sungwon YOO ,  Wonsok LEE ,  Hyunmog PARK ,  Kiseok LEE

IPC: H01L29/786

Abstract: A semiconductor device including a conductive line on a substrate, a first gate electrode on the conductive line, a second gate electrode separated by a gate isolation insulating layer on the first gate electrode, a first channel layer on a side surface of the first gate electrode, with a first gate insulating layer therebetween, a first source/drain region on another side surface of the first gate electrode, a second channel layer on another side surface of the second gate electrode on a side that is opposite to the first channel layer, with a second gate insulating layer therebetween, a second source/drain region on the second channel layer, and a third source/drain region on the first channel layer and on a side surface of the second gate electrode on a same side as the first channel layer may be provided.

公开(公告)号：US20220302198A1

公开(公告)日：2022-09-22

申请号：US17528237

申请日：2021-11-17

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jeongsoon KANG ,  Mintae RYU ,  Minsu LEE ,  Wonsok LEE

IPC: H01L27/146 ,  H01L27/148

Abstract: An image sensor includes a first substrate. A photoelectric conversion region is in the first substrate. A first interlayer insulating layer is on the first substrate. A transistor includes a bonding insulating layer on the first interlayer insulating layer, a semiconductor layer on the bonding insulating layer, and a first gate on the semiconductor layer. A bias pad is spaced apart from the semiconductor layer by the bonding insulating layer. The bias pad overlaps the first gate in a planar view. A second interlayer insulating layer covers the transistor.

公开(公告)号：US20220149092A1

公开(公告)日：2022-05-12

申请号：US17376333

申请日：2021-07-15

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jeongsoon KANG ,  Buil JUNG ,  Hyunmog PARK ,  Wonsok LEE

IPC: H01L27/146

Abstract: An image sensor includes a substrate having a pixel area in which a plurality of active areas is defined. A first transistor includes a first gate electrode including a buried gate portion. The buried gate portion is buried in the substrate in a first active area selected from the plurality of active areas. A second transistor includes a second gate electrode overlapping the buried gate portion on the first active area in a vertical direction.