UNMANNED AERIAL VEHICLE AND METHOD FOR OPERATING SAME, AND AUTOMATED GUIDED VEHICLE FOR CONTROLLING MOVEMENT OF UNMANNED AERIAL VEHICLE

    公开(公告)号:US20200257295A1

    公开(公告)日:2020-08-13

    申请号:US16760168

    申请日:2018-12-17

    Abstract: Various embodiments of the present invention relate to an unmanned aerial vehicle (UAV) and method for operating the same, and an automated guided vehicle (AGV) for controlling movements of the unmanned aerial vehicle. The unmanned aerial vehicle according to various embodiments of the present invention may comprise: a wireless communication circuit; at least one sensor; a processor operatively connected to the wireless communication circuit and the at least one sensor; and a memory operatively connected to the processor, wherein the memory stores instructions that, when executed, cause the processor to: receive a movement command for a movement with respect to the current location of the unmanned aerial vehicle, from an automated guided vehicle located within a predetermined distance from the unmanned aerial vehicle, by using the wireless communication circuit; acquire location-independent sensing information by using the at least one sensor, while the unmanned aerial vehicle moves according to the movement command; and transmit the location-independent sensing information to the automated guided vehicle so as to allow the automated guided vehicle to determine the location of the unmanned aerial vehicle by using the location-independent sensing information.

    SEMICONDUCTOR MEMORY DEVICE AND METHOD OF MANUFACTURING THE SAME

    公开(公告)号:US20220328492A1

    公开(公告)日:2022-10-13

    申请号:US17847861

    申请日:2022-06-23

    Abstract: A semiconductor memory device includes a memory cell array of a three-dimensional structure including a plurality of memory cells repeatedly arranged in a first horizontal direction and a second horizontal direction that are parallel with a main surface of a substrate and cross each other on the substrate and in a vertical direction perpendicular to the main surface, wherein each of the plurality of memory cells includes three transistors. A method of manufacturing a semiconductor memory device includes forming simultaneously a plurality of memory cells arranged in a row in a vertical direction on a substrate, wherein each of the plurality of memory cells includes three transistors.

    IMAGE SENSOR
    4.
    发明申请

    公开(公告)号:US20220302198A1

    公开(公告)日:2022-09-22

    申请号:US17528237

    申请日:2021-11-17

    Abstract: An image sensor includes a first substrate. A photoelectric conversion region is in the first substrate. A first interlayer insulating layer is on the first substrate. A transistor includes a bonding insulating layer on the first interlayer insulating layer, a semiconductor layer on the bonding insulating layer, and a first gate on the semiconductor layer. A bias pad is spaced apart from the semiconductor layer by the bonding insulating layer. The bias pad overlaps the first gate in a planar view. A second interlayer insulating layer covers the transistor.

    THREE-DIMENSIONAL SEMICONDUCTOR DEVICE

    公开(公告)号:US20210183861A1

    公开(公告)日:2021-06-17

    申请号:US16930398

    申请日:2020-07-16

    Abstract: A three-dimensional semiconductor device includes a first channel pattern on and spaced apart from a substrate, the first channel pattern having a first end and a second end that are spaced apart from each other in a first direction parallel to a top surface of the substrate, and a first sidewall and a second sidewall connecting between the first end and the second end, the first and second sidewalls being spaced apart from each other in a second direction parallel to the top surface of the substrate, the second direction intersecting the first direction, a bit line in contact with the first end of the first channel pattern, the bit line extending in a third direction perpendicular to the top surface of the substrate, and a first gate electrode adjacent to the first sidewall of the first channel pattern.

    SEMICONDUCTOR MEMORY DEVICE AND METHOD OF MANUFACTURING THE SAME

    公开(公告)号:US20210159231A1

    公开(公告)日:2021-05-27

    申请号:US16991661

    申请日:2020-08-12

    Abstract: A semiconductor memory device includes a memory cell array of a three-dimensional structure including a plurality of memory cells repeatedly arranged in a first horizontal direction and a second horizontal direction that are parallel with a main surface of a substrate and cross each other on the substrate and in a vertical direction perpendicular to the main surface, wherein each of the plurality of memory cells includes three transistors. A method of manufacturing a semiconductor memory device includes forming simultaneously a plurality of memory cells arranged in a row in a vertical direction on a substrate, wherein each of the plurality of memory cells includes three transistors.

    MULTI-SENSOR-BASED UNMANNED AERIAL VEHICLE AND METHOD FOR CONTROLLING SAME

    公开(公告)号:US20210072770A1

    公开(公告)日:2021-03-11

    申请号:US17013465

    申请日:2020-09-04

    Abstract: A multi-sensor based unmanned aerial vehicle and a method for controlling the same. The unmanned aerial vehicle may include: a sensor part configured to acquire inertia information or position information of the unmanned aerial vehicle; and a controller. The controller is configured to estimate the position of the unmanned aerial vehicle by applying the information acquired by the sensor part to an extended Kalman filter and control movement of the unmanned aerial vehicle, based on the estimated position of the unmanned aerial vehicle. The sensor part includes: an inertia sensor configured to acquire the inertia information of the unmanned aerial vehicle; a tag recognition sensor configured to recognize a tag attached to a rack and acquire absolute position information of the unmanned aerial vehicle; and an image sensor attached to the unmanned aerial vehicle so as to acquire an image of the movement environment of the unmanned aerial vehicle.

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