公开(公告)号：US12199038B2

公开(公告)日：2025-01-14

申请号：US18343784

申请日：2023-06-29

Applicant: Samsung Electronics Co., Ltd.

Inventor： Wonhyuk Hong ,  Eui Bok Lee ,  Rakhwan Kim ,  Woojin Jang

IPC: H01L23/528 ,  H01L21/768 ,  H01L23/522 ,  H01L23/532

Abstract: A semiconductor device includes a transistor on a substrate, a first metal layer that is on the transistor and includes a lower wire electrically connected to the transistor, and a second metal layer on the first metal layer. The second metal layer includes an upper wire that is electrically connected to the lower wire and includes a via structure in a via hole and a line structure in a line trench. The via structure includes a via portion that is in the via hole and is coupled to the lower wire, and a barrier portion that vertically extends from the via portion to cover an inner surface of the line trench. The barrier portion is between the line structure and an insulating layer of the second metal layer. The barrier portion is thicker at its lower level than at its upper level.

公开(公告)号：US20240379334A1

公开(公告)日：2024-11-14

申请号：US18651124

申请日：2024-04-30

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Woojin Jang ,  Wonyoung Jee ,  Kyungsun Kim ,  Mingil Kim ,  Sanghun Bang ,  Dongseok Han ,  Changkyu Kwag ,  Jihwan Kim ,  Junghyun Song ,  Kuihyun Yoon

IPC: H01J37/32

Abstract: An example coolant tube block assembly includes a first coolant tube block including at least one of a first coolant flow path tube and a second coolant flow path tube; a hub block configured to expose at least one of the first coolant flow path tube and the second coolant flow path tube on one side, and connected to a lower side of the first coolant tube block; a second coolant tube block including at least one third coolant flow path tube and at least one fourth coolant flow path tube communicating with at least one of the first coolant flow path tube and the second coolant flow path tube, and stacked with the first coolant tube block through the hub block; and a clamp disposed at a lower portion of the second coolant tube block and fastened to a fastening groove formed outside the hub block.

公开(公告)号：US11728268B2

公开(公告)日：2023-08-15

申请号：US17458873

申请日：2021-08-27

Applicant: Samsung Electronics Co., Ltd.

Inventor： Wonhyuk Hong ,  Eui Bok Lee ,  Rakhwan Kim ,  Woojin Jang

IPC: H01L23/528 ,  H01L23/522 ,  H01L23/532 ,  H01L21/768

CPC classification number: H01L23/5283 ,  H01L21/76816 ,  H01L21/76843 ,  H01L21/76879 ,  H01L23/5226 ,  H01L23/53223 ,  H01L23/53238 ,  H01L23/53252 ,  H01L23/53266

Abstract: A semiconductor device includes a transistor on a substrate, a first metal layer that is on the transistor and includes a lower wire electrically connected to the transistor, and a second metal layer on the first metal layer. The second metal layer includes an upper wire that is electrically connected to the lower wire and includes a via structure in a via hole and a line structure in a line trench. The via structure includes a via portion that is in the via hole and is coupled to the lower wire, and a barrier portion that vertically extends from the via portion to cover an inner surface of the line trench. The barrier portion is between the line structure and an insulating layer of the second metal layer. The barrier portion is thicker at its lower level than at its upper level.

公开(公告)号：US10103170B2

公开(公告)日：2018-10-16

申请号：US15784635

申请日：2017-10-16

Applicant: Samsung Electronics Co., Ltd.

Inventor： Byong-hyun Jang ,  Dongchul Yoo ,  Woojin Jang ,  Jaeyoung Ahn ,  Junkyu Yang

IPC: H01L27/11556 ,  H01L27/11582 ,  H01L23/528 ,  H01L29/51 ,  H01L27/11568 ,  H01L21/311 ,  H01L21/28 ,  H01L29/10 ,  H01L29/06 ,  H01L21/762 ,  H01L27/11565

Abstract: A semiconductor device includes word lines vertically stacked on top of each other on a substrate, insulating patterns between the word lines, a vertical pillar connected to the substrate, and residual sacrificial patterns on the substrate at sides of the word lines. The vertical pillar penetrates the word lines and the insulating patterns. Each of the insulating patterns includes a first portion between the word lines and a second portion extending from the first portion and between the residual sacrificial patterns. A first thickness of the first portion is smaller than a second thickness of the second portion.