公开(公告)号：US08338855B2

公开(公告)日：2012-12-25

申请号：US13242626

申请日：2011-09-23

Applicant: Samuel Menard

Inventor： Samuel Menard

IPC: H01L29/747

CPC classification number: H01L29/747 ,  H01L29/7404

Abstract: A voltage-controlled vertical bi-directional monolithic switch, referenced with respect to the rear surface of the switch, formed from a lightly-doped N-type semiconductor substrate, in which the control structure includes, on the front surface side, a first P-type well in which is formed an N-type region, and a second P-type well in which is formed a MOS transistor, the first P-type well and the gate of the MOS transistor being connected to a control terminal, said N-type region being connected to a main terminal of the MOS transistor, and the second main terminal of the MOS transistor being connected to the rear surface voltage of the switch.

Abstract translation: 由轻掺杂的N型半导体衬底形成的相对于开关的背面参照的电压控制的垂直双向单片开关，其中控制结构在前表面侧包括第一P 型，其中形成N型区域，第二P型阱形成有MOS晶体管，第一P型阱和MOS晶体管的栅极连接到控制端子，所述N 型区域连接到MOS晶体管的主端子，并且MOS晶体管的第二主端子连接到开关的背面电压。

公开(公告)号：US07622753B2

公开(公告)日：2009-11-24

申请号：US11512914

申请日：2006-08-30

Applicant: Samuel Menard ,  Benjamin Cheron ,  Arnaud Edet

Inventor： Samuel Menard ,  Benjamin Cheron ,  Arnaud Edet

IPC: H01L27/02

CPC classification number: H01L27/0676 ,  H01L27/0814 ,  H01L27/0817

Abstract: A component formed in a substrate of a first conductivity type, having two inputs and two outputs and: a first diode having its anode connected to a first input and having its cathode connected to a first output; a second diode having its anode connected to a second output and having its cathode connected to the first input; a one-way switch having its anode connected to the first output, its cathode being connected to the second output; and a third diode having its anode connected to the second output, its cathode being connected to the first output; the first, second, and third diodes being formed in a first portion of the substrate separated by a wall of the second conductivity type from a second substrate portion comprising the switch.

Abstract translation: 一种形成在具有两个输入和两个输出的第一导电类型的衬底中的部件，以及第一二极管，其阳极连接到第一输入并且其阴极连接到第一输出; 第二二极管，其阳极连接到第二输出并且其阴极连接到第一输入端; 单向开关，其阳极连接到第一输出，其阴极连接到第二输出; 以及第三二极管，其阳极连接到第二输出，其阴极连接到第一输出; 所述第一，第二和第三二极管形成在所述衬底的第一部分中，所述第一部分由包括所述开关的第二衬底部分由所述第二导电类型的壁分隔开。

公开(公告)号：US07612387B2

公开(公告)日：2009-11-03

申请号：US11639754

申请日：2006-12-15

Applicant: Christophe Mauriac ,  Samuel Menard

Inventor： Christophe Mauriac ,  Samuel Menard

IPC: H01L29/74

CPC classification number: H01L29/47 ,  H01L29/7412 ,  H01L29/7428

Abstract: A vertical thyristor adapted to an HF control, including a cathode region in a P-type base well, a lightly-doped P-type layer next to the base well, a lightly-doped N-type region in the lightly-doped P-type layer, a Schottky contact on the lightly-doped N-type region connected to a control terminal, and a connection between the lightly-doped N-type region and the P-type base well.

Abstract translation: 适用于HF控制器的垂直晶闸管，包括P型基极阱中的阴极区域，靠近基极阱的轻掺杂P型层，轻掺杂P型层中的轻掺杂N型区， 类型层，连接到控制端子的轻掺杂N型区域上的肖特基接触，以及轻掺杂N型区域和P型基极阱之间的连接。

公开(公告)号：US20070063305A1

公开(公告)日：2007-03-22

申请号：US11512914

申请日：2006-08-30

Applicant: Samuel Menard ,  Benjamin Cheron ,  Arnaud Edet

Inventor： Samuel Menard ,  Benjamin Cheron ,  Arnaud Edet

IPC: H01L31/07

CPC classification number: H01L27/0676 ,  H01L27/0814 ,  H01L27/0817

Abstract: A component formed in a substrate of a first conductivity type, having two inputs and two outputs and: a first diode having its anode connected to a first input and having its cathode connected to a first output; a second diode having its anode connected to a second output and having its cathode connected to the first input; a one-way switch having its anode connected to the first output, its cathode being connected to the second output; and a third diode having its anode connected to the second output, its cathode being connected to the first output; the first, second, and third diodes being formed in a first portion of the substrate separated by a wall of the second conductivity type from a second substrate portion comprising the switch.

Abstract translation: 一种形成在具有两个输入和两个输出的第一导电类型的衬底中的部件，以及第一二极管，其阳极连接到第一输入并且其阴极连接到第一输出; 第二二极管，其阳极连接到第二输出并且其阴极连接到第一输入端; 单向开关，其阳极连接到第一输出，其阴极连接到第二输出; 以及第三二极管，其阳极连接到第二输出，其阴极连接到第一输出; 所述第一，第二和第三二极管形成在所述衬底的第一部分中，所述第一部分由包括所述开关的第二衬底部分由所述第二导电类型的壁分隔开。

公开(公告)号：US20050133815A1

公开(公告)日：2005-06-23

申请号：US11013972

申请日：2004-12-16

Applicant: Samuel Menard

Inventor： Samuel Menard

IPC: H01L29/74 ,  H01L29/747

CPC classification number: H01L29/7428 ,  H01L29/747

Abstract: A triac including on its front surface side an autonomous starting well of the first conductivity type containing a region of the second conductivity type arranged to divide it, in top view, into a first and a second well portion, the first portion being connected to a control terminal and the second portion being connected with said region to the main front surface terminal.

Abstract translation: 三端双向可控硅开关元件包括在其前表面侧具有第一导电类型的自主启动阱，其包含第二导电类型的区域，其布置成在顶视图中将其分为第一和第二阱部分，第一部分连接到 控制端子和第二部分与所述区域连接到主正面端子。

公开(公告)号：US08779749B2

公开(公告)日：2014-07-15

申请号：US12171141

申请日：2008-07-10

Applicant: Jérôme Heurtier ,  Samuel Menard ,  Amaud Florence

Inventor： Jérôme Heurtier ,  Samuel Menard ,  Amaud Florence

IPC: G05F5/00 ,  H01L29/66

CPC classification number: H02M5/2573

Abstract: A circuit for generating a D.C. signal for controlling an A.C. switch referenced to a first potential, from a high-frequency signal referenced to a second potential, including: a first capacitive element connecting a first input terminal, intended to receive the high-frequency signal, to the cathode of a rectifying element having its anode connected to a first output terminal intended to be connected to a control terminal of the switch; and a second capacitive element connecting a second input terminal, intended to be connected to the second reference potential, to a second output terminal intended to be connected to the first reference potential, a second rectifying element connecting the cathode of the first rectifying element to the second output terminal.

Abstract translation: 一种用于产生DC信号的电路，用于根据参考第二电位的高频信号来控制参考第一电位的AC开关，该高频信号包括：第一电容元件，连接第一输入端，用于接收高频信号 到其正极连接到旨在连接到开关的控制端子的第一输出端子的整流元件的阴极; 以及第二电容元件，将要连接到第二参考电位的第二输入端子连接到旨在连接到第一参考电位的第二输出端子;将第一整流元件的阴极连接到第二整流元件的第二整流元件， 第二输出端子。

公开(公告)号：US08779464B2

公开(公告)日：2014-07-15

申请号：US13448670

申请日：2012-04-17

Applicant: Samuel Menard

Inventor： Samuel Menard

IPC: H01L29/87 ,  H01L29/74 ,  H01L33/00

CPC classification number: H01L29/0626 ,  H01L27/0262 ,  H01L29/165 ,  H01L29/87

Abstract: A structure for starting a semiconductor component including a porous silicon layer in the upper surface of a semiconductor substrate. This porous silicon layer is contacted, on its upper surface side, by a metallization and, on its lower surface side, by a heavily-doped semiconductor region.

Abstract translation: 一种用于在半导体衬底的上表面中起始包括多孔硅层的半导体组件的结构。 该多孔硅层在其上表面侧通过金属化和在其下表面侧上被重掺杂的半导体区域接触。

公开(公告)号：US07636006B2

公开(公告)日：2009-12-22

申请号：US11518855

申请日：2006-09-11

Applicant: Jerome Heurtier ,  Samuel Menard

Inventor： Jerome Heurtier ,  Samuel Menard

IPC: H03L5/00 ,  H03K17/687

CPC classification number: H01L29/0692 ,  H01L29/7395 ,  H03K19/017554

Abstract: A monolithic interface circuit for providing a voltage, from a control circuit supplied by a supply voltage referenced to a reference voltage, to a terminal likely to be at a high voltage with respect to the reference voltage, comprising a high-voltage N-channel MOS transistor having its gate intended to receive a control signal referenced to the reference voltage and having its source intended to be connected to the reference voltage, and a high-voltage PNP transistor having its base connected to the drain of the MOS transistor, having its emitter intended to receive the supply voltage and having its collector intended to provide a voltage to the terminal likely to be at a high voltage.

Abstract translation: 一种单片接口电路，用于从由参考电压提供的电源电压提供的控制电路提供相对于参考电压可能处于高电压的端子，包括高电压N沟道MOS 其晶体管的栅极旨在接收参考参考电压的控制信号，并且其源极意图连接到参考电压;以及高压PNP晶体管，其基极连接到MOS晶体管的漏极，具有其发射极 旨在接收电源电压并使其收集器旨在向可能处于高电压的端子提供电压。

公开(公告)号：US20070145408A1

公开(公告)日：2007-06-28

申请号：US11643444

申请日：2006-12-21

Applicant: Samuel Menard

Inventor： Samuel Menard

IPC: H01L29/74

CPC classification number: H03K17/723 ,  H01L29/0692 ,  H01L29/747

Abstract: An HF control bi-directional switch component of the type having its gate referenced to the rear surface formed in the front surface of a peripheral well of the component, including two independent gate regions intended to be respectively connected to terminals of a transformer having a midpoint connected to the rear surface terminal of the component.

Abstract translation: 这种类型的HF控制双向开关组件，其门以基部构成的外表面的前表面形成，包括两个独立的栅极区域，分别连接到具有中点的变压器的端子 连接到部件的后表面端子。

公开(公告)号：US08575647B2

公开(公告)日：2013-11-05

申请号：US13326686

申请日：2011-12-15

Applicant: Yannick Hague ,  Samuel Menard

Inventor： Yannick Hague ,  Samuel Menard

IPC: H01L29/66

CPC classification number: H01L29/0661 ,  H01L29/0626 ,  H01L29/0638 ,  H01L29/0834 ,  H01L29/747 ,  H01L29/87

Abstract: A mesa-type bidirectional Shockley diode including a substrate of a first conductivity type; a layer of the second conductivity type on each side of the substrate; a region of the first conductivity type in each of the layers of the second conductivity type; a buried region of the first conductivity type under each of said regions of the first conductivity type, each buried region being complementary in projection with the other; and a groove arranged in the vicinity of the periphery of the component on each of its surfaces, the component portion external to the groove comprising, under the external portion of the upper and lower regions of the second conductivity type, regions of the first conductivity type of same doping profile as said buried regions.

Abstract translation: 包括第一导电类型的衬底的台面型双向Shockley二极管; 在基板的每一侧上具有第二导电类型的层; 在第二导电类型的每个层中的第一导电类型的区域; 在第一导电类型的每个所述区域的每一个下的第一导电类型的掩埋区域，每个掩埋区域与另一个的突出互补; 以及在其每个表面上在所述部件的周边附近布置的槽，所述槽外部的所述部件部分包括在所述第二导电类型的上部和下部区域的外部部分处的所述第一导电类型的区域 与所述掩埋区域具有相同的掺杂特性。