RECESSED HARDMASK USED TO FORM HAMR NFT HEAT SINK

    公开(公告)号:US20190198046A1

    公开(公告)日:2019-06-27

    申请号:US16291465

    申请日:2019-03-04

    Abstract: A method involves depositing a near-field transducer on a substrate of a slider. The near-field transducer comprises a plate-like enlarged portion and a peg portion. A first hard stop extending from the near field transducer and an air bearing surface is formed. A heat sink is formed on the enlarged portion and the first hard stop. A dielectric material is deposited over the near-field transducer and the heat sink. A second hard stop is deposited on the dielectric material away from the air bearing surface. The second hard stop comprises a recess corresponding in size and location to the heat sink. The method involves milling at an oblique angle to the substrate between the first hard stop and second hard stop to cut through the heat sink at the angle. The recess of the second hard stop increases a milling rate over the heat sink compared to a second milling rate of the dielectric away from the heat sink.

    Recessed hardmask used to form HAMR NFT heat sink

    公开(公告)号:US10224064B2

    公开(公告)日:2019-03-05

    申请号:US14987058

    申请日:2016-01-04

    Abstract: A method involves depositing a near-field transducer on a substrate of a slider. The near-field transducer comprises a plate-like enlarged portion and a peg portion. A first hard stop extending from the near field transducer and an air bearing surface is formed. A heat sink is formed on the enlarged portion and the first hard stop. A dielectric material is deposited over the near-field transducer and the heat sink. A second hard stop is deposited on the dielectric material away from the air bearing surface. The second hard stop comprises a recess corresponding in size and location to the heat sink. The method involves milling at an oblique angle to the substrate between the first hard stop and second hard stop to cut through the heat sink at the angle. The recess of the second hard stop increases a milling rate over the heat sink compared to a second milling rate of the dielectric away from the heat sink.

    Nanoimprint lithography for thin film heads
    13.
    发明授权
    Nanoimprint lithography for thin film heads 有权
    用于薄膜头的纳米压印光刻

    公开(公告)号:US09343089B2

    公开(公告)日:2016-05-17

    申请号:US13791130

    申请日:2013-03-08

    Abstract: Nanoimprint lithography can be used in a variety of ways to improve resolution, pattern fidelity and symmetry of microelectronic structures for thin film head manufacturing. For example, write poles, readers, and near-field transducers can be manufactured with tighter tolerances that improve the performance of the microelectronic structures. Further, entire bars of thin film heads can be manufactured simultaneously using nanoimprint lithography, which reduces or eliminated alignment errors between neighboring thin film heads in a bar of thin film heads.

    Abstract translation: 纳米压印光刻可以以各种方式用于提高薄膜头制造的微电子结构的分辨率,图案保真度和对称性。 例如,写极点,读取器和近场换能器可以用更严格的公差制造,从而改善微电子结构的性能。 此外,可以使用纳米压印光刻法同时制造薄膜头的整个条,这减少或消除了薄膜头中的相邻薄膜头之间的对准误差。

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