公开(公告)号：US20140210110A1

公开(公告)日：2014-07-31

申请号：US13755409

申请日：2013-01-31

Applicant: SEAGATE TECHNOLOGY LLC

Inventor： Ralph Kevin Smith

IPC: H01L23/00

CPC classification number: H01L24/32 ,  B23K1/0006 ,  B23K1/0016 ,  B23K1/008 ,  B23K2101/36 ,  G11B5/105 ,  G11B5/6088 ,  G11B2005/0021 ,  H01L24/83 ,  H01L2924/12041 ,  H01L2924/12042 ,  H05K3/305 ,  H05K3/3431 ,  H05K3/3457 ,  H05K3/3478 ,  H05K3/3494 ,  H05K2201/0317 ,  H05K2201/0341 ,  H05K2201/10984 ,  H05K2203/0278 ,  H05K2203/105 ,  H05K2203/107 ,  H05K2203/1163 ,  H05K2203/166 ,  H01L2924/00

Abstract: Sub-micron precision alignment between two microelectronic components can be achieved by applying energy to incite an exothermic reaction in alternating thin film reactive layers between the two microelectronic components. Such a reaction rapidly distributes localized heat to melt a solder layer and form a joint without significant shifting of components.

Abstract translation: 通过施加能量以在两个微电子部件之间的交替的薄膜反应层中引起放热反应，可以实现两个微电子部件之间的亚微米精确对准。 这种反应快速地分布局部热量以熔化焊料层并形成接头而不会显着移动部件。