ULTRAHIGH LINEAR DENSITY SENSOR
    11.
    发明申请
    ULTRAHIGH LINEAR DENSITY SENSOR 有权
    ULTRAHIGH线性密度传感器

    公开(公告)号:US20150221326A1

    公开(公告)日:2015-08-06

    申请号:US14610771

    申请日:2015-01-30

    Abstract: A data sensor may be configured with a magnetic stack disposed between first and second magnetic shields. The magnetic stack can have a non-magnetic spacer layer disposed between first and second magnetically free laminations respectively coupled to the first and second magnetic shields via first and second electrode laminations. The first magnetically free lamination may have a first sub-layer constructed of a transition metal material and disposed between a second sub-layer constructed of a negative magnetostriction material and a third sub-layer constructed of a positive magnetostriction material.have a magnetic stack configured without a fixed magnetization structure and with a barrier layer disposed between first and second magnetically free layers. At least one magnetically free layer can be coupled to a magnetic shield by magnetic electrode and coupling layers with the coupling layer configured with at least a non-magnetic first coupling sub-layer disposed between a magnetic second coupling sub-layer and a magnetic third coupling sub-layer.

    Abstract translation: 数据传感器可以配置有设置在第一和第二磁屏蔽之间的磁性堆叠。 磁性堆叠可以具有通过第一和第二电极叠层分别耦合到第一和第二磁屏蔽的第一和第二无磁性层叠之间的非磁性间隔层。 第一无磁性层压体可以具有由过渡金属材料构成的第一子层,并且设置在由负磁致伸缩材料构成的第二子层和由正磁致伸缩材料构成的第三子层之间。 具有构造成没有固定磁化结构并且阻挡层设置在第一和第二无磁层之间的磁性堆叠。 至少一个无磁性层可以通过磁电极和耦合层耦合到磁屏蔽,耦合层配置有至少一个非磁性第一耦合子层,该非磁性第一耦合子层设置在磁性第二耦合子层和磁性第三耦合 子层。

    Coupling feature in a magnetoresistive trilayer lamination
    12.
    发明授权
    Coupling feature in a magnetoresistive trilayer lamination 有权
    耦合特征在磁阻三层层叠中

    公开(公告)号:US08970991B2

    公开(公告)日:2015-03-03

    申请号:US13797260

    申请日:2013-03-12

    CPC classification number: G11B5/3912 G11B5/3932

    Abstract: A data storage device may be generally directed to a data transducing head capable of magnetoresistive data reading. Such a data transducing head may be configured with at least a trilayer reader that contacts and is biased by a coupling feature. The coupling feature may have a smaller extent from an air bearing surface (ABS) than the trilayer reader.

    Abstract translation: 数据存储设备可以通常指向能够进行磁阻数据读取的数据传输头。 这样的数据传输头可以配置有至少三层读取器,其接触并被耦合特征偏置。 耦合特征可以比三层读取器具有比空气轴承表面(ABS)更小的程度。

    COUPLING FEATURE IN A TRILAYER LAMINATION
    13.
    发明申请
    COUPLING FEATURE IN A TRILAYER LAMINATION 有权
    三合一层叠中的耦合特征

    公开(公告)号:US20140268428A1

    公开(公告)日:2014-09-18

    申请号:US13797260

    申请日:2013-03-12

    CPC classification number: G11B5/3912 G11B5/3932

    Abstract: A data storage device may be generally directed to a data transducing head capable of magnetoresistive data reading. Such a data transducing head may be configured with at least a trilayer reader that contacts and is biased by a coupling feature. The coupling feature may have a smaller extent from an air bearing surface (ABS) than the trilayer reader.

    Abstract translation: 数据存储设备通常可以指向能够进行磁阻数据读取的数据传输头。 这样的数据传输头可以配置有至少三层读取器,其接触并被耦合特征偏置。 耦合特征可以比三层读取器具有比空气轴承表面(ABS)更小的程度。

    MAGNETIC STACK HAVING ASSIST LAYERS
    14.
    发明申请
    MAGNETIC STACK HAVING ASSIST LAYERS 有权
    具有辅助层的磁性堆叠

    公开(公告)号:US20130228884A1

    公开(公告)日:2013-09-05

    申请号:US13857410

    申请日:2013-04-05

    Abstract: A magnetic tunnel junction having a ferromagnetic free layer and a ferromagnetic pinned reference layer, each having an out-of-plane magnetic anisotropy and an out-of-plane magnetization orientation, the ferromagnetic free layer switchable by spin torque. The magnetic tunnel junction includes a ferromagnetic assist layer proximate the free layer, the assist layer having a low magnetic anisotropy less than 700 Oe and positioned to apply a magnetic field on the free layer.

    Abstract translation: 具有铁磁自由层和铁磁性固定参考层的磁性隧道结,每个具有面外磁各向异性和面外磁化取向,所述铁磁自由层可通过自旋扭矩切换。 磁性隧道结包括邻近自由层的铁磁性辅助层,辅助层具有小于700Oe的低磁各向异性,并定位成在自由层上施加磁场。

    Positive and negative magnetostriction ultrahigh linear density sensor
    17.
    发明授权
    Positive and negative magnetostriction ultrahigh linear density sensor 有权
    正和负磁致伸缩超高线性密度传感器

    公开(公告)号:US09293159B2

    公开(公告)日:2016-03-22

    申请号:US14610771

    申请日:2015-01-30

    Abstract: A data sensor may be configured with a magnetic stack disposed between first and second magnetic shields. The magnetic stack can have a non-magnetic spacer layer disposed between first and second magnetically free laminations respectively coupled to the first and second magnetic shields via first and second electrode laminations. The first magnetically free lamination may have a first sub-layer constructed of a transition metal material and disposed between a second sub-layer constructed of a negative magnetostriction material and a third sub-layer constructed of a positive magnetostriction material.

    Abstract translation: 数据传感器可以配置有设置在第一和第二磁屏蔽之间的磁性堆叠。 磁性堆叠可以具有通过第一和第二电极叠层分别耦合到第一和第二磁屏蔽的第一和第二无磁性层叠之间的非磁性间隔层。 第一无磁性层压体可以具有由过渡金属材料构成的第一子层,并且设置在由负磁致伸缩材料构成的第二子层和由正磁致伸缩材料构成的第三子层之间。

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