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    Methods of planarization for device fabrication with head features background
    14.
    发明授权
    Methods of planarization for device fabrication with head features background 有权

    公开(公告)号：US10297279B1

    公开(公告)日：2019-05-21

    申请号：US15949302

    申请日：2018-04-10

    Applicant: Seagate Technology LLC

    Inventor： Zhiguo Ge ,  Shaun E. Mckinlay ,  Stacey C. Wakeham

    IPC: G11B5/39 ,  B24B37/04

    Abstract: Methods of planarizing materials, such as where surface topographies are created as part of a thin film device fabrication process are described. These methods find particular application in the creation of nano-sized devices, where surface topographical features can be effectively planarized without adversely creating other surface topographies and/or causing deleterious effects a material junctions. Methods include the step of depositing a sacrificial layer overlying at least a portion of a first material layer and at least a portion of a backfilled second material at a junction between the first and second materials. The sacrificial layer substantially retains the surface topography of the microelectronic device. Chemical-mechanical planarization is performed on a surface of the sacrificial layer but leaving a remainder portion of the thickness of the sacrificial layer. Then, physical or dry chemical process is conducted for removing the remainder of the sacrificial layer and at least a portion of at least one of the first and second materials.

    SENSOR STABILIZATION IN A MULTIPLE SENSOR MAGNETIC REPRODUCING DEVICE
    15.
    发明申请
    SENSOR STABILIZATION IN A MULTIPLE SENSOR MAGNETIC REPRODUCING DEVICE 有权
    多传感器磁传播装置中的传感器稳定性

    公开(公告)号：US20170011759A1

    公开(公告)日：2017-01-12

    申请号：US14793988

    申请日：2015-07-08

    Applicant: Seagate Technology LLC

    Inventor： Zhiguo Ge ,  Shaun E. McKinlay ,  Eric W. Singleton ,  LiWen Tan ,  Jae Young Yi

    IPC: G11B5/39 ,  G11B5/127

    CPC classification number: G11B5/3932 ,  G11B5/115 ,  G11B5/1272 ,  G11B5/3912 ,  G11B5/3954 ,  G11B5/3974

    Abstract: A multi-sensor reader that includes a first sensor that has a sensing layer with a magnetization that changes according to an external magnetic field. The first sensor also includes first and second side biasing magnets having a magnetization substantially along a first direction. The first and second side biasing magnets align the magnetization of the sensing layer substantially along the first direction when the sensing layer is not substantially influenced by the external magnetic field. The multi-sensor reader further includes a second sensor that is stacked over the first sensor. The second sensor includes a reference layer that has a magnetization that is set substantially along a second direction. The first sensor further includes at least one sensor-stabilization feature that counteracts an influence of a magnetic field utilized to set the magnetization of the reference layer of the second sensor in the second direction on the magnetization of at least one of the first and second side biasing magnets in the first direction.

    Abstract translation: 一种多传感器读取器，其包括具有根据外部磁场而变化的磁化的感测层的第一传感器。 第一传感器还包括具有基本沿着第一方向的磁化的第一和第二侧偏置磁体。 当感测层基本上不受外部磁场的影响时，第一和第二侧偏置磁体基本上沿着第一方向对准感测层的磁化。 多传感器读取器还包括堆叠在第一传感器上的第二传感器。 第二传感器包括具有基本沿第二方向设定的磁化的参考层。 第一传感器还包括至少一个传感器稳定特征，其抵消用于将第二传感器的参考层的磁化在第二方向上的磁场的影响抵抗第一和第二侧中的至少一个的磁化 沿第一方向偏压磁铁。

    MAGNETIC ELEMENT WITH REDUCED SHIELD-TO-SHIELD SPACING
    16.
    发明申请
    MAGNETIC ELEMENT WITH REDUCED SHIELD-TO-SHIELD SPACING 审中-公开
    具有减少的屏蔽到屏蔽间隔的磁性元件

    公开(公告)号：US20160196840A1

    公开(公告)日：2016-07-07

    申请号：US15072489

    申请日：2016-03-17

    Applicant: SEAGATE TECHNOLOGY LLC

    Inventor： Eric Walter Singleton ,  Zhiguo Ge ,  Shaun Eric McKinlay ,  Jae-Young Yi

    IPC: G11B5/31

    CPC classification number: G11B5/3163 ,  G11B5/3912 ,  G11B5/3932 ,  G11B5/398

    Abstract: A magnetic stack is disclosed. The magnetic stack includes a magnetically responsive lamination that includes a ferromagnetic free layer, a synthetic antiferromagnetic (SAF) structure, and a spacer layer positioned between the ferromagnetic free layer and the SAF structure. The magnetically responsive lamination is separated from a sensed data bit stored in an adjacent medium by an air bearing surface (ABS). The stack also includes a first antiferromagnetic (AFM) structure coupled to the SAF structure a predetermined offset distance from the ABS, and a second AFM structure that is separated from the first AFM structure by a first shield layer.

    Abstract translation: 公开了磁性堆叠。 磁性堆叠包括磁响应层压，其包括铁磁自由层，合成反铁磁（SAF）结构和位于铁磁性自由层和SAF结构之间的间隔层。 磁响应层压件通过空气轴承表面（ABS）与存储在相邻介质中的感测数据位分离。 堆叠还包括耦合到SAF结构与ABS的预定偏移距离的第一反铁磁（AFM）结构，以及通过第一屏蔽层与第一AFM结构分离的第二AFM结构。

    SENSOR STACK STRUCTURE
    18.
    发明申请
    SENSOR STACK STRUCTURE 有权
    传感器堆叠结构

    公开(公告)号：US20150325260A1

    公开(公告)日：2015-11-12

    申请号：US14270593

    申请日：2014-05-06

    Applicant: Seagate Technology LLC

    Inventor： Eric W. Singleton ,  Liwen Tan ,  Jae-Young Yi ,  Konstantin Nikolaev ,  Zhiguo Ge

    IPC: G11B5/39 ,  G11B5/31

    CPC classification number: G11B5/3912 ,  G11B5/3153 ,  G11B5/3909 ,  G11B5/3932 ,  G11B5/3958 ,  G11B2005/3996

    Abstract: A reader stack, such as for a magnetic storage device, the stack having a top synthetic antiferromagnetic (SAF) layer, a magnetic capping layer adjacent to the top SAF layer, an RKKY coupling layer adjacent to the magnetic capping layer opposite the top SAF layer, and a free layer adjacent to the RKKY coupling layer opposite the magnetic capping layer. Also included is a method for biasing a free layer in a reader stack by providing an exchange coupling between the free layer and a top synthetic antiferromagnetic (SAF) layer using a layer having RKKY coupling property positioned between the free layer and the top SAF layer and a magnetic capping layer between the SAF layer and the layer having RKKY coupling property.

    Abstract translation: 诸如用于磁存储装置的读取器堆叠，堆叠具有顶部合成反铁磁（SAF）层，与顶部SAF层相邻的磁性覆盖层，与顶部SAF层相对的磁性覆盖层相邻的RKKY耦合层 以及与RKKY耦合层相邻的与磁性覆盖层相对的自由层。 还包括一种通过使用具有位于自由层和顶部SAF层之间的具有RKKY耦合性质的层的自由层和顶层合成反铁磁性（SAF）层之间的交换耦合来偏置读取器堆叠中的自由层的方法，以及 SAF层和具有RKKY耦合性质的层之间的磁性覆盖层。

    SPIN TRANSPORT SENSOR
    19.
    发明申请
    SPIN TRANSPORT SENSOR 有权
    旋转运输传感器

    公开(公告)号：US20150302872A1

    公开(公告)日：2015-10-22

    申请号：US14754372

    申请日：2015-06-29

    Applicant: Seagate Technology LLC

    Inventor： Eric Walter Singleton ,  Zhiguo Ge

    IPC: G11B5/39 ,  G01R33/09 ,  G01R33/12 ,  G11B5/31

    CPC classification number: G11B5/3906 ,  G01R33/091 ,  G01R33/1284 ,  G11B5/3163 ,  G11B5/33 ,  G11B5/3912 ,  G11B5/3929 ,  G11B5/3932 ,  G11B5/3938 ,  G11B5/398

    Abstract: The implementations disclosed herein provide for a spin transport sensor including a synthetic antiferromagnet (SAF) adjacent a shield element. The SAF extends to an air-bearing surface (ABS) and provides a current path from a current source to an ABS-region of a spin conductor layer. Spin current diffuses from the spin conductor layer to an adjacent free layer, which generates a measurable electrical voltage in a free layer of the spin transport sensor. The SAF serves as both a magnetic shield and a spin injector to the spin conductor layer.

    Abstract translation: 本文公开的实施方案提供了一种自旋传输传感器，其包括邻近屏蔽元件的合成反铁磁体（SAF）。 SAF延伸到空气轴承表面（ABS），并提供从电流源到自旋导体层的ABS区域的电流路径。 旋转电流从自旋导体层扩散到相邻的自由层，其在自旋传输传感器的自由层中产生可测量的电压。 SAF用作磁屏蔽和自旋注入器到纺丝导体层。

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