METHOD FOR PRODUCING THERMOPLASTIC COPOLYME
    12.
    发明申请
    METHOD FOR PRODUCING THERMOPLASTIC COPOLYME 失效
    生产热塑性共聚物的方法

    公开(公告)号:US20110118424A1

    公开(公告)日:2011-05-19

    申请号:US13003253

    申请日:2009-07-07

    摘要: A thermoplastic copolymer having an excellent balance among properties such as coating resistance, color stability and fluidity and having high operability and productivity can be obtained by a method for producing a thermoplastic copolymer, comprising step (I) of supplying a monomer mixture (a) containing an aromatic vinyl monomer (a1) and a vinyl cyanide monomer (a2) to a complete mixing type reactor continuously to produce a copolymer (A) and step (II) of supplying the copolymer (A) continuously to a tubular reactor with a static mixing structure therein, which is placed in series with the complete mixing type reactor, and reacting the copolymer (A) to produce a copolymer (B).

    摘要翻译: 通过制造热塑性共聚物的方法可以获得具有耐涂层性,颜色稳定性和流动性等特性和具有高可操作性和生产率的性能之间优异平衡的热塑性共聚物,该方法包括供给单体混合物(a)的步骤(I) 将芳族乙烯基单体(a1)和乙烯基氰单体(a2)连续混合到完全混合型反应器中以产生共聚物(A)和将共聚物(A)连续供给到具有静态混合的管式反应器的步骤(II) 结构,其与完全混合型反应器串联放置,并使共聚物(A)反应生成共聚物(B)。

    GATE INSULATING MATERIAL, GATE INSULATING FILM AND ORGANIC FIELD-EFFECT TRANSISTOR
    16.
    发明申请
    GATE INSULATING MATERIAL, GATE INSULATING FILM AND ORGANIC FIELD-EFFECT TRANSISTOR 有权
    栅绝缘材料,栅绝缘膜和有机场效应晶体管

    公开(公告)号:US20110068417A1

    公开(公告)日:2011-03-24

    申请号:US12933417

    申请日:2009-02-27

    IPC分类号: H01L29/78

    摘要: To provide a gate insulating material which has high chemical resistance, is superior in coatability of a resist and an organic semiconductor coating liquid, and has small hysteresis, a gate insulating film and an FET using the same by a polysiloxane having an epoxy group-containing silane compound as a copolymerization component.A gate insulating material containing a polysiloxane having, as copolymerization components, at least a silane compound represented by the general formula (1): R1mSi(OR2)4-m  (1), wherein R1 represents hydrogen, an alkyl group, a cycloalkyl group, a heterocyclic group, an aryl group, a heteroaryl group or an alkenyl group and in the case where a plurality of R1s are present, R1s may be the same or different, R2 represents an alkyl group or a cycloalkyl group and in the case where a plurality of R2s are present, R2s may be the same or different, and m represents an integer of 1 to 3, and an epoxy group-containing silane compound represented by the general formula (2): R3nR4lSi(OR5)4-n-1  (2), wherein R3 represents an alkyl group or a cycloalkyl group having one or more epoxy groups in a part of a chain and in the case where a plurality of R3s are present, R3s may be the same or different, R4 represents hydrogen, an alkyl group, a cycloalkyl group, a heterocyclic group, an aryl group, a heteroaryl group or an alkenyl group and in the case where a plurality of R4s are present, R4s may be the same or different, R5 represents an alkyl group or a cycloalkyl group and in the case where a plurality of R5s are present, R5s may be the same or different, l represents an integer of 0 to 2, and n represents 1 or 2 (however, l+n≦3).

    摘要翻译: 为了提供耐化学性高的栅极绝缘材料,具有优异的抗蚀剂和有机半导体涂布液的涂布性,并且具有较小的滞后性,栅极绝缘膜和使用该绝缘材料的FET通过具有含环氧基的聚硅氧烷 硅烷化合物作为共聚成分。 含有作为共聚成分的至少一种由通式(1)表示的硅烷化合物的聚硅氧烷的栅绝缘材料:R1mSi(OR2)4-m(1),其中R1表示氢,烷基,环烷基 ,杂环基,芳基,杂芳基或烯基,在存在多个R 1的情况下,R 1可以相同或不同,R 2表示烷基或环烷基,在 存在多个R 2,R 2可以相同或不同,m表示1〜3的整数,和由通式(2)表示的含环氧基的硅烷化合物:R3nR4lSi(OR5)4-n- 1(2)其中R3表示一部分链中具有一个或多个环氧基的烷基或环烷基,在存在多个R 3的情况下,R 3可以相同或不同,R 4表示氢 ,烷基,环烷基,杂环基,芳基g 稠环,杂芳基或烯基,在存在多个R 4的情况下,R 4可以相同或不同,R 5表示烷基或环烷基,在存在多个R 5的情况下, R5可以相同或不同,l表示0〜2的整数,n表示1或2(然而,l + n≦̸ 3)。