公开(公告)号：US20110068417A1

公开(公告)日：2011-03-24

申请号：US12933417

申请日：2009-02-27

申请人： Seiichiro Murase ,  Takenori Fujiwara ,  Yukari Jo ,  Jun Tsukamoto

发明人： Seiichiro Murase ,  Takenori Fujiwara ,  Yukari Jo ,  Jun Tsukamoto

IPC分类号： H01L29/78

CPC分类号： H01L51/052 ,  C08G59/306 ,  C08G59/3281 ,  C08G65/20 ,  C08G77/14 ,  C09D163/00 ,  G03F7/0757 ,  H01B3/40 ,  H01B3/46 ,  H01L21/02126 ,  H01L21/02216 ,  H01L21/02282 ,  H01L21/3122 ,  H01L51/0036 ,  H01L51/0068 ,  H01L51/0545

摘要： To provide a gate insulating material which has high chemical resistance, is superior in coatability of a resist and an organic semiconductor coating liquid, and has small hysteresis, a gate insulating film and an FET using the same by a polysiloxane having an epoxy group-containing silane compound as a copolymerization component.A gate insulating material containing a polysiloxane having, as copolymerization components, at least a silane compound represented by the general formula (1): R1mSi(OR2)4-m  (1), wherein R1 represents hydrogen, an alkyl group, a cycloalkyl group, a heterocyclic group, an aryl group, a heteroaryl group or an alkenyl group and in the case where a plurality of R1s are present, R1s may be the same or different, R2 represents an alkyl group or a cycloalkyl group and in the case where a plurality of R2s are present, R2s may be the same or different, and m represents an integer of 1 to 3, and an epoxy group-containing silane compound represented by the general formula (2): R3nR4lSi(OR5)4-n-1  (2), wherein R3 represents an alkyl group or a cycloalkyl group having one or more epoxy groups in a part of a chain and in the case where a plurality of R3s are present, R3s may be the same or different, R4 represents hydrogen, an alkyl group, a cycloalkyl group, a heterocyclic group, an aryl group, a heteroaryl group or an alkenyl group and in the case where a plurality of R4s are present, R4s may be the same or different, R5 represents an alkyl group or a cycloalkyl group and in the case where a plurality of R5s are present, R5s may be the same or different, l represents an integer of 0 to 2, and n represents 1 or 2 (however, l+n≦3).

摘要翻译： 为了提供耐化学性高的栅极绝缘材料，具有优异的抗蚀剂和有机半导体涂布液的涂布性，并且具有较小的滞后性，栅极绝缘膜和使用该绝缘材料的FET通过具有含环氧基的聚硅氧烷 硅烷化合物作为共聚成分。 含有作为共聚成分的至少一种由通式（1）表示的硅烷化合物的聚硅氧烷的栅绝缘材料：R1mSi（OR2）4-m（1），其中R1表示氢，烷基，环烷基 ，杂环基，芳基，杂芳基或烯基，在存在多个R 1的情况下，R 1可以相同或不同，R 2表示烷基或环烷基，在 存在多个R 2，R 2可以相同或不同，m表示1〜3的整数，和由通式（2）表示的含环氧基的硅烷化合物：R3nR4lSi（OR5）4-n- 1（2）其中R3表示一部分链中具有一个或多个环氧基的烷基或环烷基，在存在多个R 3的情况下，R 3可以相同或不同，R 4表示氢 ，烷基，环烷基，杂环基，芳基g 稠环，杂芳基或烯基，在存在多个R 4的情况下，R 4可以相同或不同，R 5表示烷基或环烷基，在存在多个R 5的情况下， R5可以相同或不同，l表示0〜2的整数，n表示1或2（然而，l + n＆nlE; 3）。

公开(公告)号：US09048445B2

公开(公告)日：2015-06-02

申请号：US12933417

申请日：2009-02-27

申请人： Seiichiro Murase ,  Takenori Fujiwara ,  Yukari Jo ,  Jun Tsukamoto

发明人： Seiichiro Murase ,  Takenori Fujiwara ,  Yukari Jo ,  Jun Tsukamoto

IPC分类号： H01L29/78 ,  H01L51/05 ,  C08G59/30 ,  C08G59/32 ,  C08G65/20 ,  C08G77/14 ,  C09D163/00 ,  H01L21/02 ,  H01L21/312 ,  G03F7/075 ,  H01B3/40 ,  H01B3/46 ,  H01L51/00

CPC分类号： H01L51/052 ,  C08G59/306 ,  C08G59/3281 ,  C08G65/20 ,  C08G77/14 ,  C09D163/00 ,  G03F7/0757 ,  H01B3/40 ,  H01B3/46 ,  H01L21/02126 ,  H01L21/02216 ,  H01L21/02282 ,  H01L21/3122 ,  H01L51/0036 ,  H01L51/0068 ,  H01L51/0545

摘要： To provide a gate insulating material which has high chemical resistance, is superior in coatability of a resist and an organic semiconductor coating liquid, and has small hysteresis, a gate insulating film and an FET using the same by a polysiloxane having an epoxy group-containing silane compound as a copolymerization component.A gate insulating material containing a polysiloxane having, as copolymerization components, at least a silane compound represented by the general formula (1): R1mSi(OR2)4-m  (1), wherein R1 represents hydrogen, an alkyl group, a cycloalkyl group, a heterocyclic group, an aryl group, a heteroaryl group or an alkenyl group and in the case where a plurality of R1s are present, R1s may be the same or different, R2 represents an alkyl group or a cycloalkyl group and in the case where a plurality of R2s are present, R2s may be the same or different, and m represents an integer of 1 to 3, and an epoxy group-containing silane compound represented by the general formula (2): R3nR4lSi(OR5)4-n-1  (2), wherein R3 represents an alkyl group or a cycloalkyl group having one or more epoxy groups in a part of a chain and in the case where a plurality of R3s are present, R3s may be the same or different, R4 represents hydrogen, an alkyl group, a cycloalkyl group, a heterocyclic group, an aryl group, a heteroaryl group or an alkenyl group and in the case where a plurality of R4s are present, R4s may be the same or different, R5 represents an alkyl group or a cycloalkyl group and in the case where a plurality of R5s are present, R5s may be the same or different, l represents an integer of 0 to 2, and n represents 1 or 2 (however, l+n≦3).

摘要翻译： 为了提供耐化学性高的栅极绝缘材料，具有优异的抗蚀剂和有机半导体涂布液的涂布性，并且具有较小的滞后性，栅极绝缘膜和使用该绝缘材料的FET通过具有含环氧基的聚硅氧烷 硅烷化合物作为共聚成分。 含有作为共聚成分的至少一种由通式（1）表示的硅烷化合物的聚硅氧烷的栅绝缘材料：R1mSi（OR2）4-m（1），其中R1表示氢，烷基，环烷基 ，杂环基，芳基，杂芳基或烯基，在存在多个R 1的情况下，R 1可以相同或不同，R 2表示烷基或环烷基，在 存在多个R 2，R 2可以相同或不同，m表示1〜3的整数，和由通式（2）表示的含环氧基的硅烷化合物：R3nR4lSi（OR5）4-n- 1（2）其中R3表示一部分链中具有一个或多个环氧基的烷基或环烷基，在存在多个R 3的情况下，R 3可以相同或不同，R 4表示氢 ，烷基，环烷基，杂环基，芳基g 稠环，杂芳基或烯基，在存在多个R 4的情况下，R 4可以相同或不同，R 5表示烷基或环烷基，在存在多个R 5的情况下， R5可以相同或不同，l表示0〜2的整数，n表示1或2（然而，l + n＆nlE; 3）。

公开(公告)号：US20060115766A1

公开(公告)日：2006-06-01

申请号：US11272791

申请日：2005-11-15

申请人： Mitsuhito Suwa ,  Takenori Fujiwara ,  Masahide Senoo ,  Hirokazu Iimori

发明人： Mitsuhito Suwa ,  Takenori Fujiwara ,  Masahide Senoo ,  Hirokazu Iimori

IPC分类号： G03C1/76

CPC分类号： G03F7/0757 ,  C08K5/42 ,  G03F7/022 ,  C08L83/04

摘要： This invention provides a positive photosensitive siloxane composition having high photosensitivity and having such properties as high heat resistance, high transparency and low dielectric constant, used to form a planarization film for a TFT substrate, an interlayer dielectrics or a core or cladding of an optical waveguide. It is a positive photosensitive siloxane composition comprising a siloxane polymer, quinonediazide compound and solvent, characterized in that the light transmittance of the cured film formed of the composition per 3 μm of film thickness at a wavelength of 400 nm is 95% or more.

摘要翻译： 本发明提供具有高感光性和具有高耐热性，高透明度和低介电常数等特性的正型感光性硅氧烷组合物，用于形成TFT基板的平坦化膜，层间电介质或光波导的芯或包层 。 它是包含硅氧烷聚合物，醌二叠氮化合物和溶剂的正性感光性硅氧烷组合物，其特征在于，由组合物形成的固化膜的光透射率为每3μm的膜厚在波长400nm时为95％以上。

公开(公告)号：US20120237873A1

公开(公告)日：2012-09-20

申请号：US13513270

申请日：2010-12-20

申请人： Takenori Fujiwara ,  Keiichi Uchida ,  Yugo Tanigaki ,  Mitsuhito Suwa

发明人： Takenori Fujiwara ,  Keiichi Uchida ,  Yugo Tanigaki ,  Mitsuhito Suwa

IPC分类号： G03F7/075

CPC分类号： C08G77/14 ,  C08G77/70 ,  C09D183/06 ,  G03F7/0757

摘要： Disclosed is a positive photosensitive resin composition which contains a polisiloxane, a naphthoquinone diazide compound, and a solvent. The positive photosensitive resin composition is characterized in that the polysiloxane has: an organosilane-derived structure represented by the general formula (1): at a content ration of 20-80% inclusive of Si relative to the overall number of moles of Si atoms in the polysiloxane; and an organosilane-derived structure represented by general formula (2): The positive photosensitive resin composition exhibits high heat resistance, high transparency, and enables high sensitivity, high resolution patterning. The positive photosensitive resin composition can be used to form cured films such as planarization films used in TFT substrates, interlayer insulating films, core materials and cladding materials, and can be used in elements having cured films such as display elements, semiconductor elements, solid-state imaging elements, and optical waveguide elements.

摘要翻译： 公开了含有聚硅氧烷，萘醌二叠氮化合物和溶剂的正型感光性树脂组合物。 正型感光性树脂组合物的特征在于，聚硅氧烷具有：由通式（1）表示的有机硅烷衍生结构：相对于Si原子的总摩尔数，含量为20〜80％，包括Si的含量 聚硅氧烷; 和由通式（2）表示的有机硅烷衍生物结构：正型感光性树脂组合物的耐热性高，透明性高，能够实现高灵敏度，高分辨率图案化。 正型感光性树脂组合物可以用于形成用于TFT基板，层间绝缘膜，芯材料和包层材料的平坦化膜等固化膜，并且可以用于具有固化膜的元件，例如显示元件，半导体元件， 状态成像元件和光波导元件。

公开(公告)号：US07374856B2

公开(公告)日：2008-05-20

申请号：US11272791

申请日：2005-11-15

申请人： Mitsuhito Suwa ,  Takenori Fujiwara ,  Masahide Senoo ,  Hirokazu Iimori

发明人： Mitsuhito Suwa ,  Takenori Fujiwara ,  Masahide Senoo ,  Hirokazu Iimori

IPC分类号： G03F7/023

CPC分类号： G03F7/0757 ,  C08K5/42 ,  G03F7/022 ,  C08L83/04

摘要： A positive photosensitive siloxane composition having high photosensitivity and having such properties as high heat resistance, high transparency and low dielectric constant may be used to form a planarization film for a TFT substrate, an interlayer dielectrics or a core or cladding of an optical waveguide. The positive photosensitive siloxane composition includes a siloxane polymer, quinonediazide compound and solvent, and a cured film formed of the composition has a light transmittance per 3 μm of film thickness at a wavelength of 400 nm of 95% or more.

摘要翻译： 可以使用具有高光敏性和具有高耐热性，高透明性和低介电常数等性能的正型感光性硅氧烷组合物来形成用于TFT基板，层间电介质或光波导的芯或包层的平坦化膜。 正型光敏性硅氧烷组合物包括硅氧烷聚合物，醌二叠氮化合物和溶剂，并且由该组合物形成的固化膜在400nm波长处具有3μm的膜厚的透光率为95％以上。