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公开(公告)号:US20200183241A1
公开(公告)日:2020-06-11
申请号:US16790351
申请日:2020-02-13
Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
Inventor: Atsushi HIROSE
IPC: G02F1/1362 , G09G3/36 , G02F1/1343 , H01L27/12 , G02F1/1368
Abstract: To provide a display device in which parasitic capacitance between wirings can be reduced while preventing increase in wiring resistance. To provide a display device with improved display quality. To provide a display device with low power consumption. A pixel of the liquid crystal display device includes a signal line, a scan line intersecting with the signal line, a first electrode projected from the signal line, a second electrode facing the first electrode, and a pixel electrode connected to the second electrode. Part of the scan line has a loop shape, and part of the first electrode is located in a region overlapped with an opening of the scan line. In other words, part of the first electrode is not overlapped with the scan line.
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公开(公告)号:US20190312063A1
公开(公告)日:2019-10-10
申请号:US16435966
申请日:2019-06-10
Applicant: Semiconductor Energy Laboratory Co., Ltd.
Inventor: Shunpei YAMAZAKI , Jun KOYAMA , Atsushi HIROSE , Masashi TSUBUKU , Kosei NODA
IPC: H01L27/12 , H04R1/02 , H01L33/02 , H04M1/02 , H01L27/15 , H01L27/32 , H01L29/786 , H01L29/24 , H01L29/36
Abstract: An object is to obtain a semiconductor device having a high sensitivity in detecting signals and a wide dynamic range, using a thin film transistor in which an oxide semiconductor layer is used. An analog circuit is formed with the use of a thin film transistor including an oxide semiconductor which has a function as a channel formation layer, has a hydrogen concentration of 5×1019 atoms/cm3 or lower, and substantially functions as an insulator in the state where no electric field is generated. Thus, a semiconductor device having a high sensitivity in detecting signals and a wide dynamic range can be obtained.
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公开(公告)号:US20180149940A1
公开(公告)日:2018-05-31
申请号:US15884440
申请日:2018-01-31
Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
Inventor: Atsushi HIROSE
IPC: G02F1/1362 , G02F1/1368 , G09G3/36 , G02F1/1343 , H01L27/12 , G02F1/136 , H01L29/786
Abstract: To provide a display device in which parasitic capacitance between wirings can be reduced while preventing increase in wiring resistance. To provide a display device with improved display quality. To provide a display device with low power consumption. A pixel of the liquid crystal display device includes a signal line, a scan line intersecting with the signal line, a first electrode projected from the signal line, a second electrode facing the first electrode, and a pixel electrode connected to the second electrode. Part of the scan line has a loop shape, and part of the first electrode is located in a region overlapped with an opening of the scan line. In other words, part of the first electrode is not overlapped with the scan line.
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公开(公告)号:US20170082902A1
公开(公告)日:2017-03-23
申请号:US15368969
申请日:2016-12-05
Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
Inventor: Atsushi HIROSE
IPC: G02F1/1362 , H01L27/12 , G02F1/1368
CPC classification number: G02F1/136286 , G02F1/134309 , G02F1/136213 , G02F1/136277 , G02F1/1368 , G02F2001/13606 , G02F2001/136295 , G02F2201/123 , G02F2202/10 , G02F2202/103 , G09G3/3677 , G09G2330/021 , H01L27/1225 , H01L27/124 , H01L27/1255 , H01L29/78669 , H01L29/7869
Abstract: To provide a display device in which parasitic capacitance between wirings can be reduced while preventing increase in wiring resistance. To provide a display device with improved display quality. To provide a display device with low power consumption. A pixel of the liquid crystal display device includes a signal line, a scan line intersecting with the signal line, a first electrode projected from the signal line, a second electrode facing the first electrode, and a pixel electrode connected to the second electrode. Part of the scan line has a loop shape, and part of the first electrode is located in a region overlapped with an opening of the scan line. In other words, part of the first electrode is not overlapped with the scan line.
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公开(公告)号:US20240077773A1
公开(公告)日:2024-03-07
申请号:US18243987
申请日:2023-09-08
Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
Inventor: Atsushi HIROSE
IPC: G02F1/1362 , G02F1/1343 , G02F1/1368 , G09G3/36 , H01L27/12
CPC classification number: G02F1/136286 , G02F1/134309 , G02F1/136213 , G02F1/136277 , G02F1/1368 , G09G3/3677 , H01L27/1225 , H01L27/124 , H01L27/1255 , G02F1/13606
Abstract: To provide a display device in which parasitic capacitance between wirings can be reduced while preventing increase in wiring resistance. To provide a display device with improved display quality. To provide a display device with low power consumption. A pixel of the liquid crystal display device includes a signal line, a scan line intersecting with the signal line, a first electrode projected from the signal line, a second electrode facing the first electrode, and a pixel electrode connected to the second electrode. Part of the scan line has a loop shape, and part of the first electrode is located in a region overlapped with an opening of the scan line. In other words, part of the first electrode is not overlapped with the scan line.
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公开(公告)号:US20170235201A1
公开(公告)日:2017-08-17
申请号:US15585926
申请日:2017-05-03
Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
Inventor: Atsushi HIROSE
IPC: G02F1/1362 , H01L27/12 , G02F1/1343 , G02F1/1368 , G09G3/36
CPC classification number: G02F1/136286 , G02F1/134309 , G02F1/136213 , G02F1/136277 , G02F1/1368 , G02F2001/13606 , G02F2001/136295 , G02F2201/123 , G02F2202/10 , G02F2202/103 , G09G3/3677 , G09G2330/021 , H01L27/1225 , H01L27/124 , H01L27/1255 , H01L29/78669 , H01L29/7869
Abstract: To provide a display device in which parasitic capacitance between wirings can be reduced while preventing increase in wiring resistance. To provide a display device with improved display quality. To provide a display device with low power consumption. A pixel of the liquid crystal display device includes a signal line, a scan line intersecting with the signal line, a first electrode projected from the signal line, a second electrode facing the first electrode, and a pixel electrode connected to the second electrode. Part of the scan line has a loop shape, and part of the first electrode is located in a region overlapped with an opening of the scan line. In other words, part of the first electrode is not overlapped with the scan line.
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公开(公告)号:US20150263680A1
公开(公告)日:2015-09-17
申请号:US14723928
申请日:2015-05-28
Applicant: Semiconductor Energy Laboratory Co., Ltd.
Inventor: Atsushi HIROSE
Abstract: In a semiconductor device, power consumption is reduced. Further, a standby circuit is formed of a few elements, and thus increase in the circuit area of the semiconductor device is prevented. The standby circuit provided in the semiconductor device is formed of only one transistor and voltage supplied to the transistor is switched, whereby output current of the semiconductor device is controlled. As a result, the output current of the semiconductor device in a standby state can be substantially zero, so that the power consumption can be reduced. By using an oxide semiconductor for a semiconductor layer of a transistor, leakage current can be suppressed as low as possible.
Abstract translation: 在半导体器件中,功耗降低。 此外,备用电路由几个元件形成,因此防止了半导体器件的电路面积的增加。 设置在半导体器件中的待机电路仅由一个晶体管形成,并且提供给晶体管的电压被切换,从而控制半导体器件的输出电流。 结果,处于待机状态的半导体器件的输出电流可以基本上为零,从而可以降低功耗。 通过使用氧化物半导体用于晶体管的半导体层,可以将泄漏电流抑制得尽可能低。
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