公开(公告)号：US11043543B2

公开(公告)日：2021-06-22

申请号：US15188462

申请日：2016-06-21

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Kensuke Yoshizumi ,  Hideaki Shishido ,  Kazunori Watanabe

IPC: G06F3/041 ,  H01L27/32 ,  G06F3/044

Abstract: A thin touch panel is provided. A touch panel with a simple structure is provided. The number of components of a touch panel is reduced. Each of a pair of wirings of a touch sensor is positioned closer to a substrate supporting light-emitting elements than a common electrode is, and includes a portion positioned between two adjacent pixel electrodes in a plan view. Furthermore, an island-like structure body with an inverse tapered shape is provided over each of the pair of wirings. A conductive layer in an electrically floating state is provided over the structure body. Each conductive layer has a portion overlapping with one of the pair of wirings. Moreover, the conductive layer and the common electrode are formed using the same conductive film.

公开(公告)号：US11004869B2

公开(公告)日：2021-05-11

申请号：US16894939

申请日：2020-06-08

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Kensuke Yoshizumi

IPC: H01L27/12 ,  H01L27/04 ,  H01L27/108 ,  H01L27/1156 ,  H01L27/06 ,  H01L29/423 ,  H01L29/24 ,  G11C16/10 ,  H01L21/84 ,  H01L27/11521 ,  H01L27/11551

Abstract: A semiconductor device is described, which includes a first transistor, a second transistor, and a capacitor. The second transistor and the capacitor are provided over the first transistor so as to overlap with a gate of the first transistor. A semiconductor layer of the second transistor and a dielectric layer of the capacitor are directly connected to the gate of the first transistor. The second transistor is a vertical transistor, where its channel direction is perpendicular to an upper surface of a semiconductor layer of the first transistor.

公开(公告)号：US10818737B2

公开(公告)日：2020-10-27

申请号：US16686556

申请日：2019-11-18

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Yoshiharu Hirakata ,  Kensuke Yoshizumi

IPC: H01L27/32 ,  H01L51/00 ,  G06F3/041 ,  H01L29/786 ,  G06F3/044 ,  H01L21/82 ,  H01L27/15 ,  G02F1/1333 ,  H01L21/683 ,  H01L27/12 ,  H01L51/52 ,  G02F1/1368 ,  G02F1/136

Abstract: The thickness of a display device including a touch sensor is reduced. Alternatively, the thickness of a display device having high display quality is reduced. Alternatively, a method for manufacturing a display device with high mass productivity is provided. Alternatively, a display device having high reliability is provided. Stacked substrates in each of which a sufficiently thin substrate and a relatively thick support substrate are stacked are used as substrates. One surface of the thin substrate of one of the stacked substrates is provided with a layer including a touch sensor, and one surface of the thin substrate of the other stacked substrate is provided with a layer including a display element. After the two stacked substrates are attached to each other so that the touch sensor and the display element face each other, the support substrate and the thin substrate of each stacked substrate are separated from each other.

公开(公告)号：US09940086B2

公开(公告)日：2018-04-10

申请号：US14994335

申请日：2016-01-13

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Kensuke Yoshizumi ,  Yuichi Yanagisawa ,  Kei Takahashi

IPC: G06F3/14 ,  H01L51/00 ,  G06F3/147 ,  H01L27/146 ,  H04N5/64

CPC classification number: G06F3/1446 ,  G06F3/147 ,  G09G2300/023 ,  G09G2300/0456 ,  G09G2330/021 ,  G09G2380/02 ,  H01L27/14681 ,  H01L51/0097 ,  H01L2251/5338 ,  H04N5/64 ,  Y02E10/549 ,  Y02P70/521

Abstract: Provided is a display device or a display system capable of displaying images along a curved surface, a display device or a display system capable of displaying images seamlessly in the form of a ring, or a display device or a display system that is suitable for increasing in size. The display device includes a display panel. The display panel includes a first part and a second part and is flexible. The first part can display images. The second part can transmit visible light. The display panel is curved so that the second part and the first part overlap with each other.

公开(公告)号：US20180046004A1

公开(公告)日：2018-02-15

申请号：US15552818

申请日：2016-02-23

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Shunpei Yamazaki ,  Kensuke Yoshizumi ,  Hiroyuki Miyake

IPC: G02F1/1343 ,  G06F3/041 ,  G02F1/1335 ,  G02F1/1333 ,  G02F1/1362 ,  G09G3/36

CPC classification number: G02F1/13624 ,  G02F1/13338 ,  G02F1/133707 ,  G02F1/136213 ,  G02F1/136286 ,  G02F2001/134372 ,  G02F2203/30 ,  G06F3/0412 ,  G09G3/3648 ,  G09G5/34 ,  G09G2300/0852 ,  G09G2320/0247 ,  G09G2320/0653 ,  G09G2320/0686 ,  H01L29/786

Abstract: An object of the present invention is to provide a display device having a function of performing display that is less likely to cause eye strain.In the configuration of the display device of the present invention, one of a source and a drain of a transistor (510) is electrically connected to one electrode of a resistor (580) and one electrode of a first capacitor (550), the other electrode of the resistor (580) is electrically connected to a first wiring (610), the other of the source and the drain of the transistor (510) is electrically connected to one electrode of a liquid crystal element (570) and one electrode of a second capacitor (560), and a gate of the transistor (510) is electrically connected to a second wiring (620).

公开(公告)号：USD803828S1

公开(公告)日：2017-11-28

申请号：US29497463

申请日：2014-07-24

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Designer： Shunpei Yamazaki ,  Kensuke Yoshizumi

公开(公告)号：US09768201B2

公开(公告)日：2017-09-19

申请号：US15256968

申请日：2016-09-06

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Daiki Nakamura ,  Kensuke Yoshizumi

IPC: H01L27/12 ,  H01L27/15 ,  H01L27/32 ,  H01L51/00 ,  H01L33/00 ,  H01L33/62

CPC classification number: H01L27/124 ,  H01L27/15 ,  H01L27/3216 ,  H01L27/3218 ,  H01L27/322 ,  H01L27/3223 ,  H01L27/323 ,  H01L27/326 ,  H01L27/3262 ,  H01L27/3276 ,  H01L27/3293 ,  H01L33/0041 ,  H01L33/62 ,  H01L51/0097 ,  H01L51/525 ,  Y02E10/549

Abstract: A display device includes overlapping two display panels. The display panel on the upper side includes a first display region and a region that transmits visible light. The display panel on the lower side includes a second display region and a region that blocks visible light. The second display region overlaps with the region that transmits visible light. The region that blocks visible light overlaps with the first display region. The display panel on the lower side includes a third display region between the second display region and the region that blocks visible light. The gate signal and the source signal supplied to a first pixel in the third display region are the same as the gate signal and the source signal supplied to a second pixel in the second display region. The second pixel is closer to the first pixel than any other pixels included in the second display region.

公开(公告)号：US09431541B2

公开(公告)日：2016-08-30

申请号：US14457257

申请日：2014-08-12

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Ryo Tokumaru ,  Kensuke Yoshizumi

IPC: H01L29/786

CPC classification number: H01L29/78609 ,  H01L29/78648 ,  H01L29/7869 ,  H01L29/78696

Abstract: To give favorable electrical characteristics to a semiconductor device. To provide a semiconductor device in which a change in electrical characteristics is suppressed. To provide a highly reliable semiconductor device. The semiconductor device includes a first insulating layer; a second insulating layer including an opening portion, over the first insulating layer; a semiconductor layer over the first insulating layer; a source electrode and a drain electrode that are apart from each other in a region overlapping with the semiconductor layer; a gate electrode overlapping with the semiconductor layer; and a gate insulating layer between the semiconductor layer and the gate electrode. The first insulating layer includes oxide, and the opening portion of the second insulating layer is positioned inside the semiconductor layer when seen from a top surface side and at least part of the opening portion is provided to overlap with the gate electrode.

Abstract translation: 为半导体器件提供有利的电气特性。 提供抑制电特性变化的半导体器件。 提供高度可靠的半导体器件。 半导体器件包括第一绝缘层; 在所述第一绝缘层上方的包括开口部分的第二绝缘层; 在所述第一绝缘层上的半导体层; 在与半导体层重叠的区域中彼此分开的源电极和漏电极; 与半导体层重叠的栅电极; 以及在半导体层和栅电极之间的栅极绝缘层。 第一绝缘层包括氧化物，并且当从顶表面侧观察时，第二绝缘层的开口部分位于半导体层内部，并且开口部分的至少一部分被设置为与栅电极重叠。

公开(公告)号：USD761254S1

公开(公告)日：2016-07-12

申请号：US29478786

申请日：2014-01-08

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Designer： Shunpei Yamazaki ,  Kensuke Yoshizumi

公开(公告)号：USD740803S1

公开(公告)日：2015-10-13

申请号：US29448566

申请日：2013-03-13

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Designer： Shunpei Yamazaki ,  Kensuke Yoshizumi