公开(公告)号：US11841595B2

公开(公告)日：2023-12-12

申请号：US18085689

申请日：2022-12-21

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Masatoshi Yokoyama ,  Shigeki Komori ,  Manabu Sato ,  Kenichi Okazaki ,  Shunpei Yamazaki

IPC: G02F1/1362 ,  G02F1/1333 ,  G02F1/1343

CPC classification number: G02F1/136227 ,  G02F1/13439 ,  G02F1/133345 ,  G02F1/134309 ,  G02F1/136277 ,  G02F1/134372 ,  G02F2202/02 ,  G02F2202/10

Abstract: To suppress a variation in characteristics of a transistor due to a released gas from an organic insulating film so that reliability of a display device is increased. The display device includes a transistor, an organic insulating film which is provided over the transistor in order to reduce unevenness due to the transistor, and a capacitor over the organic insulating film. An entire surface of the organic insulating film is not covered with components (a transparent conductive layer and an inorganic insulating film) of the capacitor, and a released gas from the organic insulating film can be released to the outside from exposed part of an upper surface of the organic insulating film.

公开(公告)号：US10861980B2

公开(公告)日：2020-12-08

申请号：US16110488

申请日：2018-08-23

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Masahiro Katayama ,  Yasutaka Nakazawa ,  Masatoshi Yokoyama ,  Masahiko Hayakawa ,  Kenichi Okazaki ,  Shunsuke Koshioka

IPC: H01L29/786 ,  G09G3/20 ,  G09G3/36 ,  G09G5/00 ,  H01L27/12 ,  G06F3/041

Abstract: A semiconductor device including a transistor and a wiring electrically connected to the transistor each of which has excellent electrical characteristics because of specific structures thereover is provided. A first conductive film, a first insulating film over the first conductive film, a second conductive film over the first insulating film, a second insulating film over the second conductive film, a third conductive film electrically connected to the first conductive film through an opening provided in the first insulating film and the second insulating film, and a third insulating film over the third conductive film are provided. The third conductive film includes indium, tin, and oxygen, and the third insulating film includes silicon and nitrogen and the number of ammonia molecules released from the third insulating film is less than or equal to 1×1015 molecules/cm3 by thermal desorption spectroscopy.

公开(公告)号：US09741866B2

公开(公告)日：2017-08-22

申请号：US14585918

申请日：2014-12-30

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Takayuki Cho ,  Shunsuke Koshioka ,  Masatoshi Yokoyama ,  Shunpei Yamazaki

IPC: H01L29/66 ,  H01L29/786 ,  H01L29/51 ,  H01L29/49

CPC classification number: H01L29/78693 ,  H01L29/4908 ,  H01L29/513 ,  H01L29/517 ,  H01L29/66742 ,  H01L29/66969 ,  H01L29/7869

Abstract: To provide a highly reliable semiconductor device which includes a transistor including an oxide semiconductor, in a semiconductor device including a staggered transistor having a bottom-gate structure provided over a glass substrate, a gate insulating film in which a first gate insulating film and a second gate insulating film, whose compositions are different from each other, are stacked in this order is provided over a gate electrode layer. Alternatively, in a staggered transistor having a bottom-gate structure, a protective insulating film is provided between a glass substrate and a gate electrode layer. A metal element contained in the glass substrate has a concentration lower than or equal to 5×1018 atoms/cm3 at the interface between the first gate insulating film and the second gate insulating film or the interface between the gate electrode layer and a gate insulating film.