公开(公告)号：US09553200B2

公开(公告)日：2017-01-24

申请号：US13777119

申请日：2013-02-26

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Atsuo Isobe ,  Sachiaki Tezuka ,  Shinji Ohno

IPC: H01L29/78 ,  H01L29/786 ,  H01L29/66

CPC classification number: H01L29/7869 ,  H01L21/02565 ,  H01L21/02595 ,  H01L21/02631 ,  H01L29/04 ,  H01L29/24 ,  H01L29/66742 ,  H01L29/66969 ,  H01L29/78603

Abstract: An oxide semiconductor layer is formed, a gate insulating layer is formed over the oxide semiconductor layer, a gate electrode layer is formed to overlap with the oxide semiconductor layer with the gate insulating layer interposed therebetween, a first insulating layer is formed to cover the gate insulating layer and the gate electrode layer, an impurity element is introduced through the insulating layer to form a pair of impurity regions in the oxide semiconductor layer, a second insulating layer is formed over the first insulating layer, the first insulating layer and the second insulating layer are anisotropically etched to form a sidewall insulating layer in contact with a side surface of the gate electrode layer, and a source electrode layer and a drain electrode layer in contact with the pair of impurity regions are formed.

Abstract translation: 形成氧化物半导体层，在氧化物半导体层上形成栅极绝缘层，形成栅极层与氧化物半导体层重叠，栅极绝缘层插入其间，形成第一绝缘层以覆盖栅极 绝缘层和栅电极层，通过绝缘层引入杂质元素，以在氧化物半导体层中形成一对杂质区，在第一绝缘层，第一绝缘层和第二绝缘层上形成第二绝缘层 各层各向异性地蚀刻以形成与栅电极层的侧表面接触的侧壁绝缘层，并且形成与一对杂质区接触的源电极层和漏电极层。

公开(公告)号：US09040984B2

公开(公告)日：2015-05-26

申请号：US14077371

申请日：2013-11-12

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Hirokazu Watanabe ,  Shinji Ohno

IPC: H01L29/786 ,  H01L29/49

CPC classification number: H01L29/7869 ,  H01L29/4908

Abstract: To provide a semiconductor device which includes a gate insulating film with high withstand voltage and thus can have high reliability. The semiconductor device includes an oxide semiconductor film over an insulating surface; a pair of first conductive films over the oxide semiconductor film; a first insulating film, a second insulating film, and a third insulating film which are stacked in this order over the oxide semiconductor film and the pair of first conductive films; and a second conductive film overlapping with the oxide semiconductor film over the first to third insulating films. The first insulating film and the third insulating film contain silicon oxide, silicon nitride, silicon oxynitride, silicon nitride oxide, aluminum oxide, or aluminum oxynitride. The second insulating film contains gallium oxide, zirconium oxide, or hafnium oxide.

Abstract translation: 提供一种包括具有高耐压的栅极绝缘膜并因此可以具有高可靠性的半导体器件。 半导体器件包括绝缘表面上的氧化物半导体膜; 氧化物半导体膜上的一对第一导电膜; 第一绝缘膜，第二绝缘膜和第三绝缘膜，其依次层叠在氧化物半导体膜和一对第一导电膜上; 以及在所述第一至第三绝缘膜上与所述氧化物半导体膜重叠的第二导电膜。 第一绝缘膜和第三绝缘膜含有氧化硅，氮化硅，氮氧化硅，氮氧化硅，氧化铝或氮氧化铝。 第二绝缘膜包含氧化镓，氧化锆或氧化铪。