公开(公告)号：US20130270720A1

公开(公告)日：2013-10-17

申请号：US13912309

申请日：2013-06-07

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Tomoyuki AOKI ,  Takuya TSURUME ,  Hiroki ADACHI ,  Nozomi HORIKOSHI ,  Hisashi OHTANI

IPC: H01L23/29

CPC classification number: H01L23/29 ,  G06K19/07749 ,  H01L21/563 ,  H01L23/145 ,  H01L23/295 ,  H01L23/3121 ,  H01L23/60 ,  H01L23/66 ,  H01L27/1214 ,  H01L27/1266 ,  H01L27/13 ,  H01L2223/6677 ,  H01L2224/16225 ,  H01L2224/32225 ,  H01L2224/73204 ,  H01L2924/09701 ,  H01L2924/12032 ,  H01L2924/12044 ,  H01L2924/19041 ,  H01L2924/3025 ,  Y10T428/31522 ,  H01L2924/00

Abstract: A separation layer and a semiconductor element layer including a thin film transistor are formed. A conductive resin electrically connected to the semiconductor element layer is formed. A first sealing layer including a fiber and an organic resin layer is formed over the semiconductor element layer and the conductive resin. A groove is formed in the first sealing layer, the semiconductor element layer, and the separation layer. A liquid is dropped into the groove to separate the separation layer and the semiconductor element layer. The first sealing layer over the conductive resin is removed to form an opening. A set of the first sealing layer and the semiconductor element layer is divided into a chip. The chip is bonded to an antenna formed over a base material. A second sealing layer including a fiber and an organic resin layer is formed so as to cover the antenna and the chip.