公开(公告)号：US20240057462A1

公开(公告)日：2024-02-15

申请号：US18258104

申请日：2021-12-15

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Shingo EGUCHI ,  Hiroki ADACHI ,  Kenichi OKAZAKI ,  Yasumasa YAMANE ,  Naoto KUSUMOTO ,  Kensuke YOSHIZUMI ,  Shunpei YAMAZAKI

IPC: H10K71/20 ,  H10K71/16 ,  H01L21/677 ,  G03F7/00

CPC classification number: H10K71/233 ,  H10K71/16 ,  H01L21/67706 ,  G03F7/0007

Abstract: Manufacturing equipment of a display device that is capable of successively performing steps from formation of a pixel circuit up to formation of a light-emitting element is provided. The manufacturing equipment includes a manufacturing apparatus of a light-emitting device that is capable of successively performing a film formation step, a lithography step, an etching step, and a sealing step for formation of an organic EL element and a manufacturing apparatus for formation of a pixel circuit that drives the organic EL element. Formation from the pixel circuit up to the organic EL element can be performed successively, so that a display device with a high yield and high reliability can be formed.

公开(公告)号：US20220406981A1

公开(公告)日：2022-12-22

申请号：US17772195

申请日：2020-11-09

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI ,  Koji KUSUNOKI ,  Hiroki ADACHI

IPC: H01L33/62 ,  H01L33/38 ,  H01L27/15 ,  H01L33/32 ,  H01L33/00 ,  G06F3/044

Abstract: A display unit with a high definition is provided. The display unit includes a transistor, a light-emitting diode, a first conductive layer, a second conductive layer, a first insulating layer, and a second insulating layer. The transistor is electrically connected to the first conductive layer, and the first conductive layer and the first insulating layer are positioned over the transistor. The second conductive layer is positioned over the first conductive layer. The second insulating layer is positioned over the first insulating layer. The light-emitting diode includes a first electrode over the second insulating layer, a light-emitting layer over the first electrode, and a second electrode over the light-emitting layer. The second electrode is electrically connected to the second conductive layer. The height of a surface of the first conductive layer on the second conductive layer side is substantially the same as the height of a surface of the first insulating layer on the second insulating layer side. The first insulating layer and the second insulating layer are directly bonded to each other. The second conductive layer is positioned in an opening in the second insulating layer and is electrically connected to the first conductive layer.

公开(公告)号：US20210011532A1

公开(公告)日：2021-01-14

申请号：US16980218

申请日：2019-03-04

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Masataka Sato ,  Hiroki ADACHI

IPC: G06F1/18 ,  G06F3/01 ,  G06F3/041

Abstract: A novel electrical module that is highly convenient or reliable is provided. A novel display panel that is highly convenient or reliable is provided. A novel display device that is highly convenient or reliable is provided. The functional layer includes an element, a conductive film, and an intermediate layer and the element is electrically connected to the conductive film. The intermediate layer includes an opening portion and a first surface, the opening portion overlaps with the conductive film, the opening portion includes a side end portion, and the side end portion is in contact with the conductive film. Moreover, the first surface includes a first region, the first region is positioned at the periphery of the opening portion, and the first region is in contact with the conductive film.

公开(公告)号：US20200273936A1

公开(公告)日：2020-08-27

申请号：US16872819

申请日：2020-05-12

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI ,  Masakatsu OHNO ,  Hiroki ADACHI ,  Satoru IDOJIRI ,  Koichi TAKESHIMA

IPC: H01L27/32 ,  B23K26/04 ,  B23K26/08 ,  H01L51/00 ,  H01L29/786 ,  B23K26/06 ,  H01L27/12 ,  B23K26/0622 ,  H01L51/52 ,  H01L29/24 ,  H01L51/56 ,  H01L29/66

Abstract: A first organic resin layer is formed over a first substrate; a first insulating film is formed over the first organic resin layer; a first element layer is formed over the first insulating film; a second organic resin layer is formed over a second substrate; a second insulating film is formed over the second organic resin layer; a second element layer is formed over the second insulating film; the first substrate and the second substrate are bonded; a first separation step in which adhesion between the first organic resin layer and the first substrate is reduced; the first organic resin layer and a first flexible substrate are bonded with a first bonding layer; a second separation step in which adhesion between the second organic resin layer and the second substrate is reduced; and the second organic resin layer and a second flexible substrate are bonded with a second bonding layer.

公开(公告)号：US20200235323A1

公开(公告)日：2020-07-23

申请号：US16842820

申请日：2020-04-08

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Masakatsu OHNO ,  Kayo KUMAKURA ,  Hiroyuki WATANABE ,  Seiji YASUMOTO ,  Satoru IDOJIRI ,  Hiroki ADACHI

IPC: H01L51/00 ,  H01L27/12 ,  H01L27/32 ,  H01L51/52

Abstract: The yield of a separation process is improved. The mass productivity of a display device which is formed through a separation process is improved. A layer is formed over a substrate with use of a material including a resin or a resin precursor. Next, a resin layer is formed by performing heat treatment on the layer. Next, a layer to be separated is formed over the resin layer. Then, the layer to be separated and the substrate are separated from each other. The heat treatment is performed in an atmosphere containing oxygen or while supplying a gas containing oxygen.

公开(公告)号：US20170278878A1

公开(公告)日：2017-09-28

申请号：US15463487

申请日：2017-03-20

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Hideaki KUWABARA ,  Hiroki ADACHI ,  Satoru IDOJIRI

IPC: H01L27/12 ,  H01L21/683 ,  H01L21/67

Abstract: A technique is described in which a transistor formed using an oxide semiconductor film, a transistor formed using a polysilicon film, a transistor formed using an amorphous silicon film or the like, a transistor formed using an organic semiconductor film, a light-emitting element, or a passive element is separated from a glass substrate by light or heat. An oxide layer is formed over a light-transmitting substrate, a metal layer is selectively formed over the oxide layer, a resin layer is formed over the metal layer, an element layer is formed over the resin layer, a flexible film is fixed to the element layer, the resin layer and the metal layer are irradiated with light through the light-transmitting substrate, the light-transmitting substrate is separated, and a bottom surface of the metal layer is made bare.

公开(公告)号：US20160361913A1

公开(公告)日：2016-12-15

申请号：US15248579

申请日：2016-08-26

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Masakatsu OHNO ,  Hiroki ADACHI ,  Satoru IDOJIRI ,  Koichi TAKESHIMA

IPC: B32B43/00 ,  B32B37/00 ,  H01L27/32 ,  H01L51/00 ,  H01L51/52 ,  B32B38/10 ,  H01L51/56

CPC classification number: B32B43/006 ,  B32B37/0053 ,  B32B37/025 ,  B32B37/12 ,  B32B37/1207 ,  B32B38/10 ,  B32B2037/1253 ,  B32B2037/268 ,  B32B2457/20 ,  B32B2457/208 ,  H01L27/322 ,  H01L27/323 ,  H01L27/3262 ,  H01L51/0013 ,  H01L51/003 ,  H01L51/524 ,  H01L51/5253 ,  H01L51/5284 ,  H01L51/56 ,  H01L2227/323 ,  H01L2227/326 ,  H01L2251/5315 ,  H01L2251/5338 ,  Y10T156/1111 ,  Y10T156/1174 ,  Y10T156/1928 ,  Y10T156/195

Abstract: The yield of a peeling process is improved. A peeling apparatus includes a structure body with a convex surface and a stage with a supporting surface which faces the convex surface. The structure body can hold a first member of a process member between the convex surface and the supporting surface. The stage can hold a second member of the process member. The radius of curvature of the convex surface is less than the radius of curvature of the supporting surface. The linear velocity of the convex surface is greater than or equal to the speed of a rotation center of the structure body passing the stage. The first member is wound along the convex surface to be separated from the second member.

公开(公告)号：US20160332826A1

公开(公告)日：2016-11-17

申请号：US15219930

申请日：2016-07-26

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Masakatsu OHNO ,  Kohei YOKOYAMA ,  Satoru IDOJIRI ,  Hisao IKEDA ,  Yasuhiro JINBO ,  Hiroki ADACHI ,  Yoshiharu HIRAKATA ,  Shingo EGUCHI

IPC: B65G49/06 ,  H01L51/56 ,  H01L27/32 ,  B65H3/08 ,  B32B37/00 ,  B65H35/00 ,  B65H16/00 ,  B32B43/00 ,  B32B17/06 ,  H01L51/52 ,  B65H3/48

CPC classification number: B65G49/068 ,  B32B17/06 ,  B32B37/025 ,  B32B38/10 ,  B32B43/006 ,  B32B2457/00 ,  B32B2457/14 ,  B32B2457/20 ,  B65G49/069 ,  B65G2249/04 ,  B65H3/0816 ,  B65H3/48 ,  B65H16/00 ,  B65H35/0006 ,  H01L21/673 ,  H01L21/67333 ,  H01L21/67715 ,  H01L21/68 ,  H01L27/3244 ,  H01L51/5237 ,  H01L51/56 ,  H01L2221/68318 ,  H01L2227/323 ,  Y10T29/53091 ,  Y10T29/5317 ,  Y10T156/1121 ,  Y10T156/1137 ,  Y10T156/1158 ,  Y10T156/1184 ,  Y10T156/1917 ,  Y10T156/1922 ,  Y10T156/1939 ,  Y10T156/1967

Abstract: An apparatus for supplying a support having a clean surface is provided. Alternatively, an apparatus for manufacturing a stack including a support and a remaining portion of a processed member whose one surface layer is separated is provided. A positioning portion, a slit formation portion, and a peeling portion are included. The positioning portion is provided with a first transfer mechanism of a stacked film including a support and a separator and a table for fixing the stacked film. The slit formation portion is provided with a cutter that can form a slit which does not pass through the separator. The peeling portion is provided with a second transfer mechanism and a peeling mechanism extending the separator and then peeling the separator. In addition, a pretreatment portion activating a support surface is included.

公开(公告)号：US20160243812A1

公开(公告)日：2016-08-25

申请号：US15147020

申请日：2016-05-05

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Kayo KUMAKURA ,  Tomoya AOYAMA ,  Akihiro CHIDA ,  Kohei YOKOYAMA ,  Masakatsu OHNO ,  Satoru IDOJIRI ,  Hisao IKEDA ,  Hiroki ADACHI ,  Yoshiharu HIRAKATA ,  Shingo EGUCHI ,  Yasuhiro JINBO

IPC: B32B43/00 ,  H01L21/67 ,  H01L51/56

CPC classification number: B32B43/006 ,  B26D1/04 ,  B26D2001/006 ,  B32B38/10 ,  B32B2457/00 ,  G02B6/00 ,  H01L21/67092 ,  H01L27/1248 ,  H01L27/3258 ,  H01L27/3262 ,  H01L51/56 ,  H01L2221/68327 ,  H01L2227/323 ,  H01L2251/5338 ,  Y10T156/1126 ,  Y10T156/1132 ,  Y10T156/1168 ,  Y10T156/1184 ,  Y10T156/1933 ,  Y10T156/1944 ,  Y10T156/1961 ,  Y10T156/1967

Abstract: A processing apparatus of a stack is provided. The stack includes two substrates attached to each other with a gap provided between their end portions. The processing apparatus includes a fixing mechanism that fixes part of the stack, a plurality of adsorption jigs that fix an outer peripheral edge of one of the substrates of the stack, and a wedge-shaped jig that is inserted into a corner of the stack. The plurality of adsorption jigs include a mechanism that allows the adsorption jigs to move separately in a vertical direction and a horizontal direction. The processing apparatus further includes a sensor sensing a position of the gap between the end portion in the stack. A tip of the wedge-shaped jig moves along a chamfer formed on an end surface of the stack. The wedge-shaped jig is inserted into the gap between the end portions in the stack.

公开(公告)号：US20150155505A1

公开(公告)日：2015-06-04

申请号：US14553251

申请日：2014-11-25

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI ,  Masakatsu OHNO ,  Hiroki ADACHI ,  Satoru IDOJIRI ,  Koichi TAKESHIMA

IPC: H01L51/00 ,  H01L51/52 ,  H01L51/50 ,  H01L51/56

CPC classification number: H01L27/3272 ,  B23K26/04 ,  B23K26/0617 ,  B23K26/0622 ,  B23K26/0643 ,  B23K26/0648 ,  B23K26/083 ,  H01L27/1225 ,  H01L27/1266 ,  H01L27/322 ,  H01L27/3244 ,  H01L27/3258 ,  H01L27/3262 ,  H01L29/24 ,  H01L29/66969 ,  H01L29/78603 ,  H01L29/7869 ,  H01L41/314 ,  H01L51/0024 ,  H01L51/0027 ,  H01L51/003 ,  H01L51/0097 ,  H01L51/5096 ,  H01L51/5246 ,  H01L51/5253 ,  H01L51/5284 ,  H01L51/56 ,  H01L2227/323 ,  H01L2227/326 ,  H01L2251/5338 ,  H01L2251/558 ,  Y02E10/549 ,  Y02P70/521

Abstract: A first organic resin layer is formed over a first substrate; a first insulating film is formed over the first organic resin layer; a first element layer is formed over the first insulating film; a second organic resin layer is formed over a second substrate; a second insulating film is formed over the second organic resin layer; a second element layer is formed over the second insulating film; the first substrate and the second substrate are bonded; a first separation step in which adhesion between the first organic resin layer and the first substrate is reduced; the first organic resin layer and a first flexible substrate are bonded with a first bonding layer; a second separation step in which adhesion between the second organic resin layer and the second substrate is reduced; and the second organic resin layer and a second flexible substrate are bonded with a second bonding layer.

Abstract translation: 在第一基板上形成第一有机树脂层; 在第一有机树脂层上形成第一绝缘膜; 第一元件层形成在第一绝缘膜上; 在第二基板上形成第二有机树脂层; 在第二有机树脂层上形成第二绝缘膜; 第二元件层形成在第二绝缘膜上; 第一基板和第二基板接合; 第一分离步骤，其中第一有机树脂层和第一基板之间的粘合力减小; 第一有机树脂层和第一柔性基板与第一接合层接合; 第二分离步骤，其中所述第二有机树脂层和所述第二基板之间的粘合减小; 并且第二有机树脂层和第二柔性基板与第二接合层接合。