公开(公告)号：US20230307634A1

公开(公告)日：2023-09-28

申请号：US18190365

申请日：2023-03-27

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Jo SAITO ,  Kaori OGITA ,  Yohei MOMMA ,  Kazutaka KURIKI ,  Shuhei YOSHITOMI ,  Yasuhiro JINBO ,  Tetsuya KAKEHATA ,  Shunpei YAMAZAKI

IPC: H01M4/525 ,  H01M10/0525 ,  H01M10/0569 ,  H01M4/131

CPC classification number: H01M4/525 ,  H01M10/0525 ,  H01M10/0569 ,  H01M4/131 ,  H01M2300/004

Abstract: A lithium ion battery having excellent charge characteristics and discharge characteristics even in a low-temperature environment is provided. The lithium ion battery includes a positive electrode active material and an electrolyte. The positive electrode active material contains cobalt, oxygen, magnesium, aluminum, and nickel. The electrolyte contains lithium hexafluorophosphate, ethylene carbonate, ethyl methyl carbonate, and dimethyl carbonate. Second discharge capacity of the lithium ion battery is higher than or equal to 70% of first discharge capacity. The first discharge capacity is obtained by performing first charge and first discharge at 20° C., and the second discharge capacity is obtained by performing second charge and second discharge at −40° C. The first discharge and the second discharge are constant current discharge with 20 mA/g per positive electrode active material weight.

公开(公告)号：US20230295005A1

公开(公告)日：2023-09-21

申请号：US18041424

申请日：2021-08-06

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Shunpei YAMAZAKI ,  Tetsuya KAKEHATA ,  Tetsuji ISHITANI ,  Yohei MOMMA

IPC: C01G51/00 ,  H01M4/525

CPC classification number: C01G51/42 ,  H01M4/525 ,  C01P2006/40 ,  C01P2002/52 ,  C01P2002/77 ,  C01P2002/72

Abstract: A method of forming a highly purified positive electrode active material is provided. A method of forming a positive electrode active material whose crystal structure is not easily broken even when charge and discharge are repeated is provided. The method of forming a positive electrode active material including lithium and a transition metal includes a first step of preparing a lithium source and a transition metal source and a second step of crushing and mixing the lithium source and the transition metal source to form a composite material. In the first step, a material with a purity of greater than or equal to 99.99% is prepared as the lithium source and a material with a purity of greater than or equal to 99.9% is prepared as the transition metal source. In the second step, crushing and mixing are performed using dehydrated acetone.

公开(公告)号：US20230261265A1

公开(公告)日：2023-08-17

申请号：US18004749

申请日：2021-07-13

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Shunpei YAMAZAKI ,  Tetsuya KAKEHATA ,  Tetsuji ISHITANI ,  Shuhei YOSHITOMI

IPC: H01M10/0585

CPC classification number: H01M10/0585

Abstract: One embodiment of the present invention achieves a fabrication method that can automate fabrication of a secondary battery. In addition, a fabrication method that can fabricate a secondary battery efficiently in a short time is achieved. Furthermore, a fabrication method that can fabricate a secondary battery with high yield is achieved. Alternatively, a method for fabricating a large secondary battery with a relatively large size is achieved. An electrolyte is dripped on one or more of a positive electrode, a separator, and a negative electrode; the one or more of the positive electrode, the separator, and the negative electrode are impregnated with the electrolyte; pressure is then reduced; and a stack of the positive electrode, the separator, and the negative electrode is sealed with an exterior film. A plurality of stacks may be arranged on an exterior film; a plurality of drops of an electrolyte may be dripped on the stacks; sealing may be performed under reduced pressure; and then the exterior film may be divided into separate secondary batteries.

公开(公告)号：US20230051739A1

公开(公告)日：2023-02-16

申请号：US17783088

申请日：2020-12-15

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI ,  Tetsuya KAKEHATA ,  Yasuhiro JINBO ,  Yuji EGI

IPC: H01L27/11524 ,  H01L29/786 ,  H01L27/11519 ,  H01L27/11556 ,  H01L27/11565 ,  H01L27/1157 ,  H01L27/11582 ,  G11C16/04

Abstract: To provide a highly reliable memory device. A first insulator is formed over a substrate; a second insulator is formed over the first insulator; a third insulator is formed over the second insulator; an opening penetrating the first insulator, the second insulator, and the third insulator is formed; a fourth insulator is formed on the inner side of a side surface of the first insulator, a side surface of the second insulator, and a side surface of the third insulator, in the opening; an oxide semiconductor is formed on the inner side of the fourth insulator; the second insulator is removed; and a conductor is formed between the first insulator and the third insulator; and the fourth insulator is formed by performing, a plurality of times, a cycle including a first step of supplying a gas containing silicon and an oxidizing gas into a chamber where the substrate is placed, a second step of stopping the supply of the gas containing silicon into the chamber; and a third step of generating plasma containing the oxidizing gas in the chamber.

公开(公告)号：US20220293764A1

公开(公告)日：2022-09-15

申请号：US17624934

申请日：2020-07-08

Applicant: Semiconductor Energy Laboratory Co., Ltd

Inventor： Shunpei YAMAZAKI ,  Tetsuya KAKEHATA

IPC: H01L29/49 ,  H01L29/786 ,  H01L29/66 ,  H01L29/40

Abstract: A transistor with a high on-state current and a semiconductor device with high productivity are provided. A first insulator; a second insulator over the first insulator; a third insulator and a first conductor over the second insulator; a fourth insulator over the third insulator and the first conductor; a fifth insulator over the fourth insulator; a first oxide over the fifth insulator; a second oxide over the first oxide; a third oxide and a fourth oxide over the second oxide; a second conductor over the third oxide; a third conductor over the fourth oxide; a sixth insulator over the second conductor; a seventh insulator over the third conductor; an eighth insulator over the fifth insulator to the seventh insulator; a fifth oxide over the second oxide and positioned between the second conductor and the third conductor; a ninth insulator over the fifth oxide; and a fourth conductor over the ninth insulator are included. Hydrogen concentration of the first conductor is lower than hydrogen concentration of the fourth conductor.

公开(公告)号：US20220131146A1

公开(公告)日：2022-04-28

申请号：US17506864

申请日：2021-10-21

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Jo SAITO ,  Yohei MOMMA ,  Kunihiro FUKUSHIMA ,  Shunsuke HOSOUMI ,  Kazuki TANEMURA ,  Tetsuya KAKEHATA ,  Shunpei YAMAZAKI ,  Toshikazu OHNO ,  Mayumi MIKAMI ,  Tatsuyoshi TAKAHASHI ,  Kazuya SHIMADA

IPC: H01M4/58 ,  H01M10/0569 ,  H01M4/38 ,  H01M10/052

Abstract: The present invention relates to a secondary battery and an electronic device. The secondary battery includes a positive electrode active material which exhibits a broad peak at around 4.55 V in a dQ/dVvsV curve obtained when the charge depth is increased. The secondary battery includes a positive electrode active material which, even when the charge voltage is greater than or equal to 4.6 V and less than or equal to 4.8 V and the charge depth is greater than or equal to 0.8 and less than 0.9, does not have the H1-3 type structure and can maintain a crystal structure where a shift in CoO2 layers is inhibited. The broad peak at around 4.55 V in the dQ/dVvsV curve indicates that a change in the energy necessary for extraction of lithium at around the voltage is small and a change in the crystal structure is small. Accordingly, the positive electrode active material hardly suffers a shift in CoO2 layers and a volume change and is relatively stable even when the charge depth is large.

公开(公告)号：US20210399134A1

公开(公告)日：2021-12-23

申请号：US17285401

申请日：2019-10-17

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Shunpei YAMAZAKI ,  Yasuhiro JINBO ,  Jun ISHIKAWA ,  Sachiaki TEZUKA ,  Tetsuya KAKEHATA

IPC: H01L29/786 ,  H01L29/66 ,  H01L21/02

Abstract: A semiconductor device having favorable electrical characteristics is provided. The semiconductor device includes a first oxide; a first conductor and a second conductor over the first oxide; a first insulator over the first conductor; a second insulator over the second conductor; a third insulator over the first insulator and the second insulator; a second oxide positioned over the first oxide and between the first conductor and the second conductor; a fourth insulator over the second oxide; a third conductor over the fourth insulator; a fifth insulator in contact with a top surface of the third insulator, a top surface of the second oxide, a top surface of the fourth insulator, and a top surface of the third conductor; a fourth conductor embedded in an opening formed in the first insulator, the third insulator, and the fifth insulator and in contact with the first conductor; and a fifth conductor embedded in an opening formed in the second insulator, the third insulator, and the fifth insulator and in contact with the second conductor. The third insulator includes, in the vicinity of an interface with the fourth conductor and in the vicinity of an interface with the fifth conductor, a region having a higher nitrogen concentration than a different region of the third insulator.

公开(公告)号：US20140103409A1

公开(公告)日：2014-04-17

申请号：US14134047

申请日：2013-12-19

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Tetsuya KAKEHATA ,  Hideto OHNUMA ,  Yoshiaki YAMAMOTO ,  Kenichiro MAKINO

IPC: H01L29/06 ,  H01L29/78 ,  H01L31/0352

CPC classification number: H01L27/1218 ,  H01L21/76254 ,  H01L27/1214 ,  H01L27/1266 ,  H01L29/0649 ,  H01L29/66772 ,  H01L29/78 ,  H01L29/78603 ,  H01L31/0352

Abstract: An object is to provide an SOI substrate provided with a semiconductor layer which can be used practically even when a glass substrate is used as a base substrate. Another object is to provide a semiconductor device having high reliability using such an SOI substrate. An altered layer is formed on at least one surface of a glass substrate used as a base substrate of an SOI substrate to form the SOI substrate. The altered layer is formed on at least the one surface of the glass substrate by cleaning the glass substrate with solution including hydrochloric acid, sulfuric acid or nitric acid. The altered layer has a higher proportion of silicon oxide in its composition and a lower density than the glass substrate.

Abstract translation: 本发明的目的是提供一种具有半导体层的SOI衬底，即使在使用玻璃衬底作为基底衬底时也可以实际使用。 另一个目的是提供一种使用这种SOI衬底具有高可靠性的半导体器件。 在用作SOI衬底的基底衬底的玻璃衬底的至少一个表面上形成改变的层，以形成SOI衬底。 通过用包括盐酸，硫酸或硝酸的溶液清洗玻璃基板，在玻璃基板的至少一个表面上形成改变的层。 改变的层在其组成中具有较高比例的氧化硅，并且具有比玻璃基底更低的密度。

公开(公告)号：US20250023362A1

公开(公告)日：2025-01-16

申请号：US18711808

申请日：2022-11-28

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Takeshi OSADA ,  Tetsuya KAKEHATA ,  Yosuke TSUKAMOTO ,  Shigeru ONOYA ,  Noboru INOUE ,  Shunpei YAMAZAKI

IPC: H02J7/00 ,  B60R25/045 ,  B62J43/13 ,  B62J43/16 ,  H04L9/40 ,  H04W12/06

Abstract: An electric vehicle and a system that easily recognize theft of a secondary battery of an electric vehicle typified by an electrically assisted bicycle and prevent the theft are provided. To prevent the theft of a secondary battery that can be detached from an electric vehicle typified by an electrically assisted bicycle or an electric motorcycle, mutual authentication between an electric vehicle body unit and a secondary battery unit is performed. The secondary battery unit at least includes a first memory portion storing first identification information, an authentication portion, and a wireless communication portion.

公开(公告)号：US20240429319A1

公开(公告)日：2024-12-26

申请号：US18817534

申请日：2024-08-28

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Shunpei YAMAZAKI ,  Yasuhiro JINBO ,  Jun ISHIKAWA ,  Sachiaki TEZUKA ,  Tetsuya KAKEHATA

IPC: H01L29/786 ,  H01L21/02 ,  H01L21/768 ,  H01L29/66

Abstract: A semiconductor device having favorable electrical characteristics is provided. The semiconductor device includes a first oxide; a first conductor and a second conductor over the first oxide; a first insulator over the first conductor; a second insulator over the second conductor; a third insulator over the first insulator and the second insulator; a second oxide positioned over the first oxide and between the first conductor and the second conductor; a fourth insulator over the second oxide; a third conductor over the fourth insulator; a fifth insulator in contact with a top surface of the third insulator, a top surface of the second oxide, a top surface of the fourth insulator, and a top surface of the third conductor; a fourth conductor embedded in an opening formed in the first insulator, the third insulator, and the fifth insulator and in contact with the first conductor; and a fifth conductor embedded in an opening formed in the second insulator, the third insulator, and the fifth insulator and in contact with the second conductor. The third insulator includes, in the vicinity of an interface with the fourth conductor and in the vicinity of an interface with the fifth conductor, a region having a higher nitrogen concentration than a different region of the third insulator.