Silicon based optically degraded arc for lithographic patterning
    13.
    发明授权
    Silicon based optically degraded arc for lithographic patterning 失效
    用于光刻图案的硅基光学降解电弧

    公开(公告)号:US07507521B2

    公开(公告)日:2009-03-24

    申请号:US10914605

    申请日:2004-08-09

    IPC分类号: G03F7/00 G03F7/004

    CPC分类号: H01L21/76808

    摘要: An optically tuned SLAM (Sacrificial Light-Absorbing Material) may be used in a via-first dual damascene patterning process to facilitate removal of the SLAM. The monomers used to produce the optically tuned SLAM may be modified to place an optically sensitive structure in the backbone of the SLAM polymer. The wafer may be exposed to a wavelength to which the SLAM is tuned prior to etching and/or ashing steps to degrade the optically tuned SLAM and facilitate removal.

    摘要翻译: 光学调谐的SLAM(牺牲光吸收材料)可以用于通孔第一双镶嵌图案化工艺以便于去除SLAM。 用于产生光学调谐SLAM的单体可以被修饰以将光敏结构置于SLAM聚合物的主链中。 在蚀刻和/或灰化步骤之前,可以将晶片暴露于SLAM调谐到的波长以降解光学调谐的SLAM并便于去除。