公开(公告)号：US20230183060A1

公开(公告)日：2023-06-15

申请号：US18072506

申请日：2022-11-30

Applicant: SiTime Corporation

Inventor： Charles I. Grosjean ,  Nicholas Miller ,  Paul M. Hagelin ,  Ginel C. Hill ,  Joseph C. Doll

IPC: B81C1/00 ,  H10N30/05 ,  H10N39/00 ,  H03H3/007 ,  H03H9/10

CPC classification number: B81C1/00698 ,  H03H3/0073 ,  H03H9/1057 ,  H10N30/05 ,  H10N39/00 ,  B81C1/00158 ,  B81C2201/0171

Abstract: Multiple degenerately-doped silicon layers are implemented within resonant structures to control multiple orders of temperature coefficients of frequency.

公开(公告)号：US11312622B1

公开(公告)日：2022-04-26

申请号：US16915696

申请日：2020-06-29

Applicant: SiTime Corporation

Inventor： Nicholas Miller ,  Ginel C. Hill ,  Charles I. Grosjean ,  Michael Julian Daneman ,  Paul M. Hagelin ,  Aaron Partridge

IPC: B81B7/02 ,  H02H9/04 ,  H01L23/00 ,  B81C1/00

Abstract: A semiconductor device includes first and second exposed electrical contacts and a cavity having a microelectromechanical system (MEMS) structure therein. A conductive path extends from the first exposed electrical contact to the cavity and an over-voltage protection element electrically is coupled between the first and second exposed electrical contacts.