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    MEMORY ACCESS MODULE FOR PERFORMING MEMORY ACCESS MANAGEMENT
    15.
    发明申请
    MEMORY ACCESS MODULE FOR PERFORMING MEMORY ACCESS MANAGEMENT 有权
    用于执行存储器访问管理的存储器访问模块

    公开(公告)号：US20160329095A1

    公开(公告)日：2016-11-10

    申请号：US15213419

    申请日：2016-07-19

    Applicant: Silicon Motion Inc.

    Inventor： Tsung-Chieh Yang ,  Hsiao-Te Chang ,  Wen-Long Wang

    IPC: G11C11/56 ,  G11C16/08

    CPC classification number: G11C11/5642 ,  G06F3/0604 ,  G06F3/0622 ,  G06F3/0629 ,  G06F3/0638 ,  G06F3/0679 ,  G11C11/5628 ,  G11C16/08 ,  G11C16/26

    Abstract: A memory access module for performing memory access management of a storage device including a plurality of storage cells includes: sensing means for performing a plurality of sensing operations respectively corresponding to a plurality of different sensing voltages in order to generate at least a first digital value of a storage cell, wherein each subsequent sensing operation corresponds to a sensing voltage which is determined according to a result of the previous sensing operation; processing means for using the first digital value to obtain soft information of a bit stored in the storage cell; and decoding means for using the soft information to perform soft decoding.

    Abstract translation: 一种用于执行包括多个存储单元的存储设备的存储器访问管理的存储器访问模块包括：感测装置，用于执行分别对应于多个不同感测电压的多个感测操作，以便产生至少第一数字值 存储单元，其中每个后续感测操作对应于根据先前感测操作的结果确定的感测电压; 处理装置，用于使用第一数字值来获得存储在存储单元中的位的软信息; 以及用于使用软信息进行软解码的解码装置。

    METHOD FOR PERFORMING MEMORY ACCESS MANAGEMENT, AND ASSOCIATED MEMORY DEVICE AND CONTROLLER THEREOF
    16.
    发明申请
    METHOD FOR PERFORMING MEMORY ACCESS MANAGEMENT, AND ASSOCIATED MEMORY DEVICE AND CONTROLLER THEREOF 有权
    执行存储器访问管理的方法及其相关的存储器件及其控制器

    公开(公告)号：US20140321203A1

    公开(公告)日：2014-10-30

    申请号：US14327580

    申请日：2014-07-10

    Applicant: Silicon Motion Inc.

    Inventor： Tsung-Chieh Yang ,  Hsiao-Te Chang ,  Wen-Long Wang

    IPC: G11C16/26

    CPC classification number: G11C11/5642 ,  G06F3/0604 ,  G06F3/0622 ,  G06F3/0629 ,  G06F3/0638 ,  G06F3/0679 ,  G11C11/5628 ,  G11C16/08 ,  G11C16/26

    Abstract: A method for accessing a memory includes: utilizing a Flash memory to perform a plurality of sensing operations with a plurality of different sensing voltages respectively corresponding to the plurality of sensing operations; according to the plurality of sensing operations, generating a first digital value of a Flash cell of the Flash memory; according to the plurality of sensing operations and the first digital value, generating at least a second digital value of the Flash cell; and obtaining soft information of the Flash cell according to the second digital value. The first digital value and the second digital value are used for determining information of a same bit stored in the Flash cell, a number of possible bit(s) of the Flash cell directly corresponds to a number of possible states of the Flash cell, and the obtained soft information is used for performing soft decoding.

    Abstract translation: 一种用于访问存储器的方法包括：利用闪速存储器执行多个感测操作，所述感测操作具有分别对应于所述多个感测操作的多个不同感测电压; 根据所述多个感测操作，产生所述闪存的闪存单元的第一数字值; 根据所述多个感测操作和所述第一数字值，生成所述闪存单元的至少第二数字值; 并根据第二数字值获取闪存单元的软信息。 第一数字值和第二数字值用于确定存储在闪存单元中的相同位的信息，闪存单元的可能位的数量直接对应于闪存单元的可能状态的数量，以及 所获得的软信息用于执行软解码。

    Method and non-transitory computer-readable storage medium and apparatus for dynamically updating optimization read voltage table
    17.
    发明授权
    Method and non-transitory computer-readable storage medium and apparatus for dynamically updating optimization read voltage table 有权

    公开(公告)号：US12204763B2

    公开(公告)日：2025-01-21

    申请号：US18080852

    申请日：2022-12-14

    Applicant: Silicon Motion, Inc.

    Inventor： Chun-Yi Chen ,  Hsiao-Te Chang

    IPC: G06F3/00 ,  G06F3/06

    Abstract: The invention relates to a method, a non-transitory computer-readable storage medium and an apparatus for dynamically updating an optimization read voltage (RV) table. The method includes: obtaining a data-read transaction and replying with the data-read transaction to a host side after listening to a first request for read-performance data, which is issued by the host side, thereby enabling the data-performance transaction to be used in an update of the optimization RV table for a designated memory-cell type; and programming multiple records of an updated optimization RV table for the designated memory-cell type into a designated location of the NAND-flash module after listening to a second request for updating the optimization RV table for the designated memory-cell type, which is issued by the host side. The data-read transaction includes a current environmental parameter of a NAND-flash module, the designated memory-cell type and a bit error rate (BER). Each record includes one set of RV parameters and an environmental parameter associated with the set of RV parameters.

    MEMORY ACCESS MODULE FOR PERFORMING MEMORY ACCESS MANAGEMENT
    19.
    发明申请
    MEMORY ACCESS MODULE FOR PERFORMING MEMORY ACCESS MANAGEMENT 审中-公开

    公开(公告)号：US20190027214A1

    公开(公告)日：2019-01-24

    申请号：US16127240

    申请日：2018-09-11

    Applicant: Silicon Motion Inc.

    Inventor： Tsung-Chieh Yang ,  Hsiao-Te Chang ,  Wen-Long Wang

    IPC: G11C11/56 ,  G06F3/06 ,  G11C16/08 ,  G11C16/26

    Abstract: A Flash memory access module performs memory access management of a Flash storage device including a plurality of storage cells. The Flash memory access module includes: a read only memory for storing a program code; and a microprocessor which executes the program code to perform the following steps: performing a first sensing operation corresponding to a first sensing voltage in a storage cell, and performing a second sensing operation in the storage cell; using the first sensing operation and at least the second sensing operation to generate a first digital value and a second digital value, respectively, of the storage cell; using the first digital value and the second digital value to obtain soft information of a same bit stored in the storage cell; and using the soft information to perform soft decoding.

    Memory access module for performing a plurality of sensing operations to generate digital values of a storage cell in order to perform decoding of the storage cell
    20.
    发明授权
    Memory access module for performing a plurality of sensing operations to generate digital values of a storage cell in order to perform decoding of the storage cell 有权

    公开(公告)号：US10102904B2

    公开(公告)日：2018-10-16

    申请号：US15679178

    申请日：2017-08-17

    Applicant: Silicon Motion Inc.

    Inventor： Tsung-Chieh Yang ,  Hsiao-Te Chang ,  Wen-Long Wang

    IPC: G11C11/56 ,  G06F3/06 ,  G11C16/08 ,  G11C16/26

    Abstract: A memory access module for performing memory access management of a storage device includes a plurality of storage cells. Each storage cell has a number of possible bit(s) directly corresponding to possible states of the storage cell. The memory access module further includes: a read only memory for storing a program code; and a microprocessor, coupled to the read only memory, for executing the program code to perform the following steps: performing a plurality of sensing operations, wherein a first sensing operation corresponds to a first sensing voltage, and each subsequent sensing operation corresponds to a sensing voltage determined according to a result of the previous sensing operation; using the plurality of sensing operations to generate a first digital value and a second digital value of a storage cell; using the first and the second digital value to obtain soft information of a same bit stored in the storage cell; and using the soft information to perform soft decoding.

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