公开(公告)号：US12113515B2

公开(公告)日：2024-10-08

申请号：US17599149

申请日：2020-03-19

Applicant: Soitec

Inventor： Sylvain Ballandras ,  Thierry LaRoche ,  Julien Garcia

IPC: H03H9/64 ,  G01K11/26 ,  G01S13/75 ,  G06K7/00 ,  G06K19/067

CPC classification number: H03H9/642 ,  G01K11/265 ,  G01S13/755 ,  G06K7/00 ,  G06K19/0675

Abstract: A method of interrogating an acoustic wave sensor comprises transmitting, by an interrogator, an interrogation radiofrequency signal to the acoustic wave sensor by way of a transmission antenna, receiving, by the interrogator, a response radiofrequency signal from the acoustic wave sensor by way of a reception antenna, and processing by a processing means of the interrogator the received response radiofrequency signal to obtain in-phase and quadrature components both in the time domain and the frequency domain, determining by the processing means perturbations of the obtained in-phase and quadrature components both in the time domain and the frequency domain and determining by the processing means a value of a measurand based on the detected perturbations.

公开(公告)号：US20240186986A1

公开(公告)日：2024-06-06

申请号：US18439388

申请日：2024-02-12

Applicant: Soitec

Inventor： Eric Michoulier ,  Sylvain Ballandras ,  Thierry LaRoche

IPC: H03H9/64 ,  H03H9/02

CPC classification number: H03H9/643 ,  H03H9/02653

Abstract: A surface elastic wave filter has resonant cavities and comprises a composite substrate formed of a base substrate and a piezoelectric upper layer; at least one input electroacoustic transducer and an output electroacoustic transducer, arranged on the upper layer, and at least one internal reflecting structure, arranged between the input electroacoustic transducer and the output electroacoustic transducer. The internal reflecting structure comprises a first structure comprising at least one reflection grating having a first period and a second structure comprising at least one reflection grating having a second period, the first period being greater than the second period.

公开(公告)号：US12255612B2

公开(公告)日：2025-03-18

申请号：US18583235

申请日：2024-02-21

Applicant: Soitec

Inventor： Sylvain Ballandras ,  Thierry LaRoche

IPC: H03H9/02 ,  H03H3/08 ,  H03H9/145 ,  H03H9/25 ,  H03H9/64

Abstract: A surface acoustic wave device comprising a base substrate, a piezoelectric layer and an electrode layer in between the piezoelectric layer and the base substrate, a comb electrode formed on the piezoelectric layer comprising a plurality of electrode means with a pitch p, defined asp=A, with A being the wavelength of the standing acoustic wave generated by applying opposite potentials to the electrode layer and comb electrode, wherein the piezoelectric layer comprises at least one region located in between the electrode means, in which at least one physical parameter is different compared to the region underneath the electrode means or fingers. A method of fabrication for such surface acoustic wave device is also disclosed. The physical parameter may be thickness, elasticity, doping concentration of Ti or number of protons obtained by proton exchange.

公开(公告)号：US20250023545A1

公开(公告)日：2025-01-16

申请号：US18706565

申请日：2022-11-02

Applicant: Soitec

Inventor： Thierry Laroche ,  Sylvain Ballandras ,  Gabrielle Aspar ,  Emilie Courjon ,  Florent Bernard

IPC: H03H9/10 ,  H03H3/08 ,  H03H9/145

Abstract: A compact and robust encapsulation system for protecting a surface wave device comprises a SAW device and a sealing joint, which seals a second substrate to the base substrate of the SAW device so as to form a cavity, and an antenna connection means arranged outside the cavity on the encapsulation system.

公开(公告)号：US12085460B2

公开(公告)日：2024-09-10

申请号：US17599896

申请日：2020-03-19

Applicant: Soitec

Inventor： Sylvain Ballandras ,  Emilie Courjon ,  Florent Bernard ,  Alexandre Raveski

IPC: G01L1/16

CPC classification number: G01L1/165

Abstract: A resonator device for measuring stress comprises at least two resonators, each resonator comprising an inter-digitated transducer structure arranged between two reflecting structures on or in a piezoelectric substrate, characterized in that the at least two resonators are arranged and positioned such that they have two different wave propagation directions, and each resonator comprises at least two parts with the area between the two parts of the at least two resonators forming a cavity, wherein the cavity is shared by the at least two resonators. A differential sensing device may comprise at least one resonator device as described wherein.

公开(公告)号：US20240250659A1

公开(公告)日：2024-07-25

申请号：US18583235

申请日：2024-02-21

Applicant: Soitec

Inventor： Sylvain Ballandras ,  Thierry LaRoche

IPC: H03H9/02 ,  H03H3/08 ,  H03H9/145 ,  H03H9/25 ,  H03H9/64

CPC classification number: H03H9/02866 ,  H03H3/08 ,  H03H9/02574 ,  H03H9/02661 ,  H03H9/145 ,  H03H9/25 ,  H03H9/6489

Abstract: A surface acoustic wave device comprising a base substrate, a piezoelectric layer and an electrode layer in between the piezoelectric layer and the base substrate, a comb electrode formed on the piezoelectric layer comprising a plurality of electrode means with a pitch p, defined asp=A, with A being the wavelength of the standing acoustic wave generated by applying opposite potentials to the electrode layer and comb electrode, wherein the piezoelectric layer comprises at least one region located in between the electrode means, in which at least one physical parameter is different compared to the region underneath the electrode means or fingers. A method of fabrication for such surface acoustic wave device is also disclosed. The physical parameter may be thickness, elasticity, doping concentration of Ti or number of protons obtained by proton exchange.

公开(公告)号：US20240154603A1

公开(公告)日：2024-05-09

申请号：US18549023

申请日：2022-03-03

Applicant: Soitec

Inventor： Sylvain Ballandras ,  Thierry LaRoche ,  Julien Garcia ,  Emilie Courjon

IPC: H03H9/64 ,  H03H9/02 ,  H03H9/145 ,  H03H9/25

CPC classification number: H03H9/6413 ,  H03H9/02574 ,  H03H9/14502 ,  H03H9/25

Abstract: An acoustic wave sensor device comprises a quartz material layer surface; arranged along a first axis, a first interdigitated transducer disposed over the planar surface of the quartz material layer, a first reflection structure disposed over the planar surface of the quartz material layer, and a second reflection structure disposed over the planar surface of the quartz material layer; and arranged along a second axis, a second interdigitated transducer disposed over the planar surface of the quartz material layer, a third reflection structure disposed over the planar surface of the quartz material layer, and a fourth reflection structure disposed over the planar surface of the quartz material layer; and wherein the first axis and the second axis are inclined to each other by a finite angle.