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公开(公告)号：US11252360B2
公开(公告)日：2022-02-15
申请号：US16291427
申请日：2019-03-04
Applicant: Sony Corporation
Inventor： Sozo Yokogawa , Isao Hirota
Abstract: The present disclosure relates to a solid-state image pickup device and an electronic apparatus by which a phase-difference detection pixel that avoids defects such as lowering of sensitivity to incident light and lowering of phase-difference detection accuracy can be realized. A solid-state image pickup device as a first aspect of the present disclosure is a solid-state image pickup device in which a normal pixel that generates a pixel signal of an image and a phase-difference detection pixel that generates a pixel signal used in calculation of a phase-difference signal for controlling an image-surface phase difference AF function are arranged in a mixed manner, in which, in the phase-difference detection pixel, a shared on-chip lens for condensing incident light to a photoelectric converter that generates a pixel signal used in calculation of the phase-difference signal is formed for every plurality of adjacent phase-difference detection pixels. The present disclosure is applicable to a backside illumination CMOS image sensor and an electronic apparatus equipped with the same.
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公开(公告)号：US11140342B2
公开(公告)日：2021-10-05
申请号：US16738236
申请日：2020-01-09
Applicant: Sony Corporation
Inventor： Sozo Yokogawa , Isao Hirota
IPC: H04N5/369 , H01L27/146 , H04N9/04 , G02B7/34 , G02B7/38
Abstract: The present disclosure relates to a solid-state image pickup device and an electronic apparatus by which a phase-difference detection pixel that avoids defects such as lowering of sensitivity to incident light and lowering of phase-difference detection accuracy can be realized. A solid-state image pickup device as a first aspect of the present disclosure is a solid-state image pickup device in which a normal pixel that generates a pixel signal of an image and a phase-difference detection pixel that generates a pixel signal used in calculation of a phase-difference signal for controlling an image-surface phase difference AF function are arranged in a mixed manner, in which, in the phase-difference detection pixel, a shared on-chip lens for condensing incident light to a photoelectric converter that generates a pixel signal used in calculation of the phase-difference signal is formed for every plurality of adjacent phase-difference detection pixels. The present disclosure is applicable to a backside illumination CMOS image sensor and an electronic apparatus equipped with the same.
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公开(公告)号：US11081508B2
公开(公告)日：2021-08-03
申请号：US16797922
申请日：2020-02-21
Applicant: SONY CORPORATION
Inventor： Sozo Yokogawa
IPC: H01L27/146 , H01L31/028 , H01L31/0376
Abstract: The present disclosure relates to a solid state imaging element and an electronic device that make it possible to improve sensitivity to light on a long wavelength side. A solid state imaging element according to a first aspect of the present disclosure has a solid state imaging element in which a large number of pixels are arranged vertically and horizontally, the solid state imaging element includes a periodic concave-convex pattern on a light receiving surface and an opposite surface to the light receiving surface of a light absorbing layer as a light detecting element. The present disclosure can be applied to, for example, a CMOS and the like installed in a sensor that needs a high sensitivity to light belonging to a region on the long wavelength side, such as light in the infrared region.
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公开(公告)号：US20190199950A1
公开(公告)日：2019-06-27
申请号：US16291427
申请日：2019-03-04
Applicant: Sony Corporation
Inventor： Sozo Yokogawa , Isao Hirota
Abstract: The present disclosure relates to a solid-state image pickup device and an electronic apparatus by which a phase-difference detection pixel that avoids defects such as lowering of sensitivity to incident light and lowering of phase-difference detection accuracy can be realized. A solid-state image pickup device as a first aspect of the present disclosure is a solid-state image pickup device in which a normal pixel that generates a pixel signal of an image and a phase-difference detection pixel that generates a pixel signal used in calculation of a phase-difference signal for controlling an image-surface phase difference AF function are arranged in a mixed manner, in which, in the phase-difference detection pixel, a shared on-chip lens for condensing incident light to a photoelectric converter that generates a pixel signal used in calculation of the phase-difference signal is formed for every plurality of adjacent phase-difference detection pixels. The present disclosure is applicable to a backside illumination CMOS image sensor and an electronic apparatus equipped with the same.
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公开(公告)号：US10284799B2
公开(公告)日：2019-05-07
申请号：US15534621
申请日：2015-12-08
Applicant: Sony Corporation
Inventor： Sozo Yokogawa , Isao Hirota
Abstract: The present disclosure relates to a solid-state image pickup device and an electronic apparatus by which a phase-difference detection pixel that avoids defects such as lowering of sensitivity to incident light and lowering of phase-difference detection accuracy can be realized. A solid-state image pickup device as a first aspect of the present disclosure is a solid-state image pickup device in which a normal pixel that generates a pixel signal of an image and a phase-difference detection pixel that generates a pixel signal used in calculation of a phase-difference signal for controlling an image-surface phase difference AF function are arranged in a mixed manner, in which, in the phase-difference detection pixel, a shared on-chip lens for condensing incident light to a photoelectric converter that generates a pixel signal used in calculation of the phase-difference signal is formed for every plurality of adjacent phase-difference detection pixels. The present disclosure is applicable to a backside illumination CMOS image sensor and an electronic apparatus equipped with the same.
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Patent Agency Ranking
公开(公告)号：US20170234803A1
公开(公告)日：2017-08-17
申请号：US15582183
申请日：2017-04-28
Applicant: Sony Corporation
Inventor： Sozo Yokogawa
IPC: G01N21/78 , G01N21/552 , G01N21/41
CPC classification number: G01N21/78 , G01J3/0205 , G01N21/4133 , G01N21/554 , G02B5/008
Abstract: There is provided an image capture device including a narrow-band optical irradiation system including a light source, a solid-state imaging element including an array of pixels and sensitive to a predetermined range of wavelengths, and a metal thin-film filter provided in an optical path between the optical irradiation system and the solid-state imaging element, and having a periodic microstructural pattern having a period shorter than a wavelength detected by the solid-state imaging element.
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公开(公告)号：US10113972B2
公开(公告)日：2018-10-30
申请号：US15582183
申请日：2017-04-28
Applicant: Sony Corporation
Inventor： Sozo Yokogawa
IPC: G01N21/78 , G01N21/552 , G01N21/41
Abstract: There is provided an image capture device including a narrow-band optical irradiation system including a light source, a solid-state imaging element including an array of pixels and sensitive to a predetermined range of wavelengths, and a metal thin-film filter provided in an optical path between the optical irradiation system and the solid-state imaging element, and having a periodic microstructural pattern having a period shorter than a wavelength detected by the solid-state imaging element.
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公开(公告)号：US20180090531A1
公开(公告)日：2018-03-29
申请号：US15823842
申请日：2017-11-28
Applicant: Sony Corporation
Inventor： Sozo Yokogawa
IPC: H01L27/146 , H04N5/374 , G01J3/02
CPC classification number: H01L27/14621 , G01J3/0259 , G01J3/027 , G01J3/12 , G01J3/18 , G01J3/2803 , G01J3/2823 , G01J2003/1213 , G01J2003/2806 , G01J2003/2816 , G01J2003/282 , G01J2003/2826 , G02B5/008 , G02B5/201 , H01L27/14629 , H04N5/332 , H04N5/374 , H04N5/378 , H04N9/07
Abstract: A solid-state image sensor and an imaging system with a two-dimensional pixel array, and a plurality of types of filters that are arranged facing a pixel region of the two-dimensional pixel array, the filters each including a spectrum function and a periodic fine pattern shorter than a wavelength to be detected, wherein each of the filters forms a unit which is larger than the photoelectric conversion device of each pixel on the two-dimensional pixel array, where one type of filter is arranged for a plurality of adjacent photoelectric conversion device groups, wherein the plurality of types of filters are arranged for adjacent unit groups to form a filter bank, and wherein the filter banks are arranged in a unit of N×M, where N and M are integers of one or more, facing the pixel region of the two-dimensional pixel array.
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公开(公告)号：US09659986B2
公开(公告)日：2017-05-23
申请号：US15063200
申请日：2016-03-07
Applicant: Sony Corporation
Inventor： Sozo Yokogawa
IPC: H01L27/146 , H04N9/04 , H04N5/335 , H04N5/235
CPC classification number: H01L27/14625 , H01L27/14621 , H01L27/14623 , H01L27/14685 , H04N5/235 , H04N5/238 , H04N5/335 , H04N9/045 , H04N2209/046
Abstract: A two-dimensional solid-state image capture device includes pixel areas arranged in a two-dimensional matrix, each pixel area being constituted by multiple sub-pixel regions, each sub-pixel region having a photoelectric conversion element. A polarization member is disposed at a light incident side of at least one of the sub-pixel regions constituting each pixel area. The polarization member has strip-shaped conductive light-shielding material layers and slit areas, provided between the strip-shaped conductive light-shielding material layers. Each sub-pixel region further has a wiring layer for controlling an operation of the photoelectric conversion element, and the polarization member and the wiring layer are made of the same material and are disposed on the same virtual plane.
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20.发明授权Two-dimensional solid-state image capture device with polarization member and color filter for sub-pixel regions and polarization-light data processing method therefor 有权具有用于子像素区域的偏振构件和滤色器的二维固态图像捕获装置和偏振光数据处理方法公开(公告)号：US09313424B2
公开(公告)日：2016-04-12
申请号：US14280406
申请日：2014-05-16
Applicant: Sony Corporation
Inventor： Sozo Yokogawa
CPC classification number: H01L27/14625 , H01L27/14621 , H01L27/14623 , H01L27/14685 , H04N5/235 , H04N5/238 , H04N5/335 , H04N9/045 , H04N2209/046
Abstract: A two-dimensional solid-state image capture device includes pixel areas arranged in a two-dimensional matrix, each pixel area being constituted by multiple sub-pixel regions, each sub-pixel region having a photoelectric conversion element. A polarization member is disposed at a light incident side of at least one of the sub-pixel regions constituting each pixel area. The polarization member has strip-shaped conductive light-shielding material layers and slit areas, provided between the strip-shaped conductive light-shielding material layers. Each sub-pixel region further has a wiring layer for controlling an operation of the photoelectric conversion element, and the polarization member and the wiring layer are made of the same material and are disposed on the same virtual plane.
Abstract translation: 二维固态图像捕获装置包括以二维矩阵排列的像素区域，每个像素区域由多个子像素区域构成，每个子像素区域具有光电转换元件。 偏振构件设置在构成每个像素区域的子像素区域中的至少一个的光入射侧。 偏振构件具有设置在条状导电屏蔽材料层之间的带状导电遮光材料层和狭缝区域。 每个子像素区域还具有用于控制光电转换元件的操作的布线层，并且偏振构件和布线层由相同的材料制成并且被布置在同一虚拟平面上。
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