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公开(公告)号：US10411053B2
公开(公告)日：2019-09-10
申请号：US15312069
申请日：2015-05-29
申请人： SONY CORPORATION
发明人： Sozo Yokogawa
IPC分类号： H01L31/028 , H01L31/0376 , H01L27/146
摘要： The present disclosure relates to a solid state imaging element and an electronic device that make it possible to improve sensitivity to light on a long wavelength side. A solid state imaging element according to a first aspect of the present disclosure has a solid state imaging element in which a large number of pixels are arranged vertically and horizontally, the solid state imaging element includes a periodic concave-convex pattern on a light receiving surface and an opposite surface to the light receiving surface of a light absorbing layer as a light detecting element. The present disclosure can be applied to, for example, a CMOS and the like installed in a sensor that needs a high sensitivity to light belonging to a region on the long wavelength side, such as light in the infrared region.
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公开(公告)号：US10103189B2
公开(公告)日：2018-10-16
申请号：US15823842
申请日：2017-11-28
申请人： Sony Corporation
发明人： Sozo Yokogawa
IPC分类号： H04N9/083 , H04N3/14 , H04N5/335 , H04N9/04 , H01L27/146 , G01J3/02 , G01J3/28 , G01J3/18 , G01J3/12 , H04N5/33 , G02B5/00 , H04N9/07 , G02B5/20 , H04N5/378 , H04N5/374
摘要： A solid-state image sensor and an imaging system with a two-dimensional pixel array, and a plurality of types of filters that are arranged facing a pixel region of the two-dimensional pixel array, the filters each including a spectrum function and a periodic fine pattern shorter than a wavelength to be detected, wherein each of the filters forms a unit which is larger than the photoelectric conversion device of each pixel on the two-dimensional pixel array, where one type of filter is arranged for a plurality of adjacent photoelectric conversion device groups, wherein the plurality of types of filters are arranged for adjacent unit groups to form a filter bank, and wherein the filter banks are arranged in a unit of N×M, where N and M are integers of one or more, facing the pixel region of the two-dimensional pixel array.
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3.发明申请公开(公告)号：US20140253756A1
公开(公告)日：2014-09-11
申请号：US14280406
申请日：2014-05-16
申请人： Sony Corporation
发明人： Sozo Yokogawa
CPC分类号： H01L27/14625 , H01L27/14621 , H01L27/14623 , H01L27/14685 , H04N5/235 , H04N5/238 , H04N5/335 , H04N9/045 , H04N2209/046
摘要： A two-dimensional solid-state image capture device includes pixel areas arranged in a two-dimensional matrix, each pixel area being constituted by multiple sub-pixel regions, each sub-pixel region having a photoelectric conversion element. A polarization member is disposed at a light incident side of at least one of the sub-pixel regions constituting each pixel area. The polarization member has strip-shaped conductive light-shielding material layers and slit areas, provided between the strip-shaped conductive light-shielding material layers. Each sub-pixel region further has a wiring layer for controlling an operation of the photoelectric conversion element, and the polarization member and the wiring layer are made of the same material and are disposed on the same virtual plane.
摘要翻译： 二维固态图像捕获装置包括以二维矩阵排列的像素区域，每个像素区域由多个子像素区域构成，每个子像素区域具有光电转换元件。 偏振构件设置在构成每个像素区域的子像素区域中的至少一个的光入射侧。 偏振构件具有设置在条状导电屏蔽材料层之间的带状导电遮光材料层和狭缝区域。 每个子像素区域还具有用于控制光电转换元件的操作的布线层，并且偏振构件和布线层由相同的材料制成并且被布置在同一虚拟平面上。
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公开(公告)号：US10983339B2
公开(公告)日：2021-04-20
申请号：US16322335
申请日：2017-08-01
申请人： SONY CORPORATION
发明人： Sozo Yokogawa
IPC分类号： H01L31/0232 , G02B27/00 , H04N5/374 , H04N9/07 , G02B5/20 , H01L27/146 , G02B13/16 , G02B3/00 , H04N9/04 , G02B5/22
摘要： To suppress the reduction in transmission efficiency due to the change of the chief ray angle in spite of using structural color filters. A solid-state imaging element includes: a light receiving element included in a plurality of pixels; structural color filters located above at least part of the light receiving element and each including a metal film a periodic opening pattern with a structural period smaller than a prescribed wavelength; and an interconnection layer located below the light receiving element and configured to acquire a signal of light detected by the light receiving element. The structural period is different between the structural color filters in accordance with a chief ray angle of incident light, and the structural period of the periodic opening pattern becomes smaller as the chief ray angle becomes larger, relative to the structural period of the periodic opening pattern at the chief ray angle of 0°.
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公开(公告)号：US10728506B2
公开(公告)日：2020-07-28
申请号：US15311726
申请日：2015-05-27
申请人： SONY CORPORATION
发明人： Sozo Yokogawa
IPC分类号： H04N9/083 , H01L27/14 , G02B5/20 , H01L27/146 , G02B5/00 , H04N5/3745 , G02B5/22 , H04N5/378
摘要： An optical filter that suppresses the occurrence of color mixing due to wavelength components on the short wavelength side relative to the desired transmission component. The optical filter includes a metal thin-film filter in which a plurality of openings are periodically arranged, and a first dielectric layer that coats a surface of the metal thin-film filter and coats or fills an interior of the opening of the metal thin-film filter. The optical filter also includes a second dielectric layer having a refractive index lower than a refractive index of the first dielectric layer and formed at least on an incidence surface side of the metal thin-film filter. The present technology can be applied to a hole array filter.
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公开(公告)号：US20200006407A1
公开(公告)日：2020-01-02
申请号：US16563582
申请日：2019-09-06
申请人： SONY CORPORATION
发明人： Sozo Yokogawa
IPC分类号： H01L27/146 , H01L31/028 , H01L31/0376
摘要： The present disclosure relates to a solid state imaging element and an electronic device that make it possible to improve sensitivity to light on a long wavelength side. A solid state imaging element according to a first aspect of the present disclosure has a solid state imaging element in which a large number of pixels are arranged vertically and horizontally, the solid state imaging element includes a periodic concave-convex pattern on a light receiving surface and an opposite surface to the light receiving surface of a light absorbing layer as a light detecting element. The present disclosure can be applied to, for example, a CMOS and the like installed in a sensor that needs a high sensitivity to light belonging to a region on the long wavelength side, such as light in the infrared region.
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公开(公告)号：US20150002843A1
公开(公告)日：2015-01-01
申请号：US14311958
申请日：2014-06-23
申请人： Sony Corporation
发明人： Sozo Yokogawa
CPC分类号： G01N21/78 , G01J3/0205 , G01N21/4133 , G01N21/554 , G02B5/008
摘要： There is provided an image capture device including a narrow-band optical irradiation system including a light source, a solid-state imaging element including an array of pixels and sensitive to a predetermined range of wavelengths, and a metal thin-film filter provided in an optical path between the optical irradiation system and the solid-state imaging element, and having a periodic microstructural pattern having a period shorter than a wavelength detected by the solid-state imaging element.
摘要翻译： 提供了一种图像捕获装置，包括：包括光源的窄带光照射系统，包括像素阵列并且对预定波长范围敏感的固态成像元件;以及金属薄膜滤光器， 光学照射系统和固态成像元件之间的光路，并具有周期性微结构图案，其周期比由固态成像元件检测的波长短。
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公开(公告)号：US11329080B2
公开(公告)日：2022-05-10
申请号：US16563582
申请日：2019-09-06
申请人： SONY CORPORATION
发明人： Sozo Yokogawa
IPC分类号： H01L27/146 , H01L31/028 , H01L31/0376
摘要： The present disclosure relates to a solid state imaging element and an electronic device that make it possible to improve sensitivity to light on a long wavelength side. A solid state imaging element according to a first aspect of the present disclosure has a solid state imaging element in which a large number of pixels are arranged vertically and horizontally, the solid state imaging element includes a periodic concave-convex pattern on a light receiving surface and an opposite surface to the light receiving surface of a light absorbing layer as a light detecting element. The present disclosure can be applied to, for example, a CMOS and the like installed in a sensor that needs a high sensitivity to light belonging to a region on the long wavelength side, such as light in the infrared region.
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公开(公告)号：US10587829B2
公开(公告)日：2020-03-10
申请号：US16291427
申请日：2019-03-04
申请人： Sony Corporation
发明人： Sozo Yokogawa , Isao Hirota
摘要： The present disclosure relates to a solid-state image pickup device and an electronic apparatus by which a phase-difference detection pixel that avoids defects such as lowering of sensitivity to incident light and lowering of phase-difference detection accuracy can be realized. A solid-state image pickup device as a first aspect of the present disclosure is a solid-state image pickup device in which a normal pixel that generates a pixel signal of an image and a phase-difference detection pixel that generates a pixel signal used in calculation of a phase-difference signal for controlling an image-surface phase difference AF function are arranged in a mixed manner, in which, in the phase-difference detection pixel, a shared on-chip lens for condensing incident light to a photoelectric converter that generates a pixel signal used in calculation of the phase-difference signal is formed for every plurality of adjacent phase-difference detection pixels. The present disclosure is applicable to a backside illumination CMOS image sensor and an electronic apparatus equipped with the same.
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公开(公告)号：US20170366770A1
公开(公告)日：2017-12-21
申请号：US15534621
申请日：2015-12-08
申请人： Sony Corporation
发明人： Sozo Yokogawa , Isao Hirota
CPC分类号： H04N5/3696 , G02B7/34 , G02B7/38 , H01L27/14605 , H01L27/14621 , H01L27/14623 , H01L27/14627 , H01L27/1463 , H04N5/23212 , H04N9/045
摘要： The present disclosure relates to a solid-state image pickup device and an electronic apparatus by which a phase-difference detection pixel that avoids defects such as lowering of sensitivity to incident light and lowering of phase-difference detection accuracy can be realized. A solid-state image pickup device as a first aspect of the present disclosure is a solid-state image pickup device in which a normal pixel that generates a pixel signal of an image and a phase-difference detection pixel that generates a pixel signal used in calculation of a phase-difference signal for controlling an image-surface phase difference AF function are arranged in a mixed manner, in which, in the phase-difference detection pixel, a shared on-chip lens for condensing incident light to a photoelectric converter that generates a pixel signal used in calculation of the phase-difference signal is formed for every plurality of adjacent phase-difference detection pixels. The present disclosure is applicable to a backside illumination CMOS image sensor and an electronic apparatus equipped with the same.
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