公开(公告)号：US20090130806A1

公开(公告)日：2009-05-21

申请号：US12350776

申请日：2009-01-08

申请人： Stefan Sedlmaier ,  Hans-Joachim Schulze ,  Anton Mauder ,  Helmut Strack ,  Armin Willmeroth ,  Frank Pfirsch

发明人： Stefan Sedlmaier ,  Hans-Joachim Schulze ,  Anton Mauder ,  Helmut Strack ,  Armin Willmeroth ,  Frank Pfirsch

IPC分类号： H01L21/336

CPC分类号： H01L29/7811 ,  H01L21/2205 ,  H01L21/2252 ,  H01L21/2255 ,  H01L23/291 ,  H01L23/298 ,  H01L29/0634 ,  H01L29/0661 ,  H01L29/1095 ,  H01L29/1604 ,  H01L29/1608 ,  H01L29/165 ,  H01L29/66712 ,  H01L29/7802 ,  H01L29/7813 ,  H01L2924/0002 ,  H01L2924/00

摘要： A semiconductor component with charge compensation structure has a semiconductor body having a drift path between two electrodes. The drift path has drift zones of a first conduction type, which provide a current path between the electrodes in the drift path, while charge compensation zones of a complementary conduction type constrict the current path of the drift path. For this purpose, the drift path has two alternately arranged, epitaxially grown diffusion zone types, the first drift zone type having monocrystalline semiconductor material on a monocrystalline substrate, and a second drift zone type having monocrystalline semiconductor material in a trench structure, with complementarily doped walls, the complementarily doped walls forming the charge compensation zones.

摘要翻译： 具有电荷补偿结构的半导体部件具有在两个电极之间具有漂移路径的半导体本体。 漂移路径具有第一导电类型的漂移区域，其在漂移路径中的电极之间提供电流路径，而互补导电类型的电荷补偿区域限制漂移路径的电流路径。 为此，漂移路径具有两个交替布置的外延生长的扩散区类型，第一漂移区类型在单晶衬底上具有单晶半导体材料，以及在沟槽结构中具有单晶半导体材料的第二漂移区类型，具有互补掺杂 壁，形成电荷补偿区的互补掺杂壁。

公开(公告)号：US08110868B2

公开(公告)日：2012-02-07

申请号：US11435979

申请日：2006-05-17

申请人： Frank Dieter Pfirsch ,  Armin Willmeroth ,  Anton Mauder ,  Stefan Sedlmaier

发明人： Frank Dieter Pfirsch ,  Armin Willmeroth ,  Anton Mauder ,  Stefan Sedlmaier

IPC分类号： H01L29/78

CPC分类号： H01L29/7802 ,  H01L29/0634 ,  H01L29/0653 ,  H01L29/0696 ,  H01L29/0878 ,  H01L29/1095 ,  H01L29/407 ,  H01L29/41766 ,  H01L29/4916 ,  H01L29/66734 ,  H01L29/7803 ,  H01L29/7804 ,  H01L29/7813 ,  H01L29/872

摘要： A semiconductor component having a semiconductor body is disclosed. In one embodiment, the semiconductor component includes a drift zone of a first conductivity type, a drift control zone composed of a semiconductor material which is arranged adjacent to the drift zone at least in places, a dielectric which is arranged between the drift zone and the drift control zone at least in places. A quotient of the net dopant charge of the drift control zone, in an area adjacent to the accumulation dielectric and the drift zone, divided by the area of the dielectric arranged between the drift control zone and the drift zone is less than the breakdown charge of the semiconductor material in the drift control zone.

摘要翻译： 公开了一种具有半导体本体的半导体部件。 在一个实施例中，半导体部件包括第一导电类型的漂移区，由半导体材料构成的漂移控制区，该半导体材料至少位于与漂移区相邻的位置处，布置在漂移区和 漂移控制区至少在地方。 漂移控制区的净掺杂剂电荷在与积聚电介质和漂移区相邻的区域除以布置在漂移控制区和漂移区之间的介质的面积除以小于 漂移控制区中的半导体材料。

公开(公告)号：US20080150073A1

公开(公告)日：2008-06-26

申请号：US11961235

申请日：2007-12-20

申请人： Armin Willmeroth ,  Anton Mauder ,  Stefan Sedlmaier

发明人： Armin Willmeroth ,  Anton Mauder ,  Stefan Sedlmaier

IPC分类号： H01L29/00 ,  H01L21/20

CPC分类号： H01L29/7802 ,  H01L29/0634 ,  H01L29/0878 ,  H01L29/1095 ,  H01L29/41766 ,  H01L29/7813

摘要： A charge compensation component having a drift path between two electrodes, an electrode and a counterelectrode, and methods for producing the same. The drift path has drift zones of a first conduction type and charge compensation zones of a complementary conduction type with respect to the first conduction type. A drift path layer doping comprising the volume integral of the doping locations of a horizontal drift path layer of the vertically extending drift path including the drift zone regions and charge compensation zone regions arranged in the drift path layer is greater in the vicinity of the electrodes than in the direction of the centre of the drift path.

摘要翻译： 具有两个电极之间的漂移路径的电荷补偿组件，电极和反电极及其制造方法。 漂移路径具有第一导电类型的漂移区和相对于第一导电类型的互补导电类型的电荷补偿区。 包括垂直延伸的漂移路径的水平漂移路径层的掺杂位置的体积积分的漂移路径层掺杂包括布置在漂移路径层中的漂移区域和电荷补偿区域在电极附近较大， 在漂移路径的中心方向。

公开(公告)号：US08263450B2

公开(公告)日：2012-09-11

申请号：US12350776

申请日：2009-01-08

申请人： Stefan Sedlmaier ,  Hans-Joachim Schulze ,  Anton Mauder ,  Helmut Strack ,  Armin Willmeroth ,  Frank Pfirsch

发明人： Stefan Sedlmaier ,  Hans-Joachim Schulze ,  Anton Mauder ,  Helmut Strack ,  Armin Willmeroth ,  Frank Pfirsch

IPC分类号： H01L21/00

CPC分类号： H01L29/7811 ,  H01L21/2205 ,  H01L21/2252 ,  H01L21/2255 ,  H01L23/291 ,  H01L23/298 ,  H01L29/0634 ,  H01L29/0661 ,  H01L29/1095 ,  H01L29/1604 ,  H01L29/1608 ,  H01L29/165 ,  H01L29/66712 ,  H01L29/7802 ,  H01L29/7813 ,  H01L2924/0002 ,  H01L2924/00

摘要： A semiconductor component with charge compensation structure has a semiconductor body having a drift path between two electrodes. The drift path has drift zones of a first conduction type, which provide a current path between the electrodes in the drift path, while charge compensation zones of a complementary conduction type constrict the current path of the drift path. For this purpose, the drift path has two alternately arranged, epitaxially grown diffusion zone types, the first drift zone type having monocrystalline semiconductor material on a monocrystalline substrate, and a second drift zone type having monocrystalline semiconductor material in a trench structure, with complementarily doped walls, the complementarily doped walls forming the charge compensation zones.

摘要翻译： 具有电荷补偿结构的半导体部件具有在两个电极之间具有漂移路径的半导体本体。 漂移路径具有第一导电类型的漂移区域，其在漂移路径中的电极之间提供电流路径，而互补导电类型的电荷补偿区域限制漂移路径的电流路径。 为此，漂移路径具有两个交替布置的外延生长的扩散区类型，第一漂移区类型在单晶衬底上具有单晶半导体材料，以及在沟槽结构中具有单晶半导体材料的第二漂移区类型，具有互补掺杂 壁，形成电荷补偿区的互补掺杂壁。

公开(公告)号：US20120132956A1

公开(公告)日：2012-05-31

申请号：US13367909

申请日：2012-02-07

申请人： Frank Dieter Pfirsch ,  Armin Willmeroth ,  Anton Mauder ,  Stefan Sedlmaier

发明人： Frank Dieter Pfirsch ,  Armin Willmeroth ,  Anton Mauder ,  Stefan Sedlmaier

IPC分类号： H01L29/739 ,  H01L29/78

CPC分类号： H01L29/7802 ,  H01L29/0634 ,  H01L29/0653 ,  H01L29/0696 ,  H01L29/0878 ,  H01L29/1095 ,  H01L29/407 ,  H01L29/41766 ,  H01L29/4916 ,  H01L29/66734 ,  H01L29/7803 ,  H01L29/7804 ,  H01L29/7813 ,  H01L29/872

摘要： A semiconductor component having a semiconductor body is disclosed. In one embodiment, the semiconductor component includes a drift zone of a first conductivity type, a drift control zone composed of a semiconductor material which is arranged adjacent to the drift zone at least in places, a dielectric which is arranged between the drift zone and the drift control zone at least in places. A quotient of the net dopant charge of the drift control zone, in an area adjacent to the accumulation dielectric and the drift zone, divided by the area of the dielectric arranged between the drift control zone and the drift zone is less than the breakdown charge of the semiconductor material in the drift control zone.

摘要翻译： 公开了一种具有半导体本体的半导体部件。 在一个实施例中，半导体部件包括第一导电类型的漂移区，由半导体材料构成的漂移控制区，该半导体材料至少位于与漂移区相邻的位置处，布置在漂移区和 漂移控制区至少在地方。 漂移控制区的净掺杂剂电荷在与积聚电介质和漂移区相邻的区域除以布置在漂移控制区和漂移区之间的介质的面积除以小于 漂移控制区中的半导体材料。

公开(公告)号：US07968919B2

公开(公告)日：2011-06-28

申请号：US11961235

申请日：2007-12-20

申请人： Armin Willmeroth ,  Anton Mauder ,  Stefan Sedlmaier

发明人： Armin Willmeroth ,  Anton Mauder ,  Stefan Sedlmaier

IPC分类号： H01L29/66

CPC分类号： H01L29/7802 ,  H01L29/0634 ,  H01L29/0878 ,  H01L29/1095 ,  H01L29/41766 ,  H01L29/7813

摘要： A charge compensation component having a drift path between two electrodes, an electrode and a counterelectrode, and methods for producing the same. The drift path has drift zones of a first conduction type and charge compensation zones of a complementary conduction type with respect to the first conduction type. A drift path layer doping comprising the volume integral of the doping locations of a horizontal drift path layer of the vertically extending drift path including the drift zone regions and charge compensation zone regions arranged in the drift path layer is greater in the vicinity of the electrodes than in the direction of the center of the drift path.

摘要翻译： 具有两个电极之间的漂移路径的电荷补偿组件，电极和反电极及其制造方法。 漂移路径具有第一导电类型的漂移区和相对于第一导电类型的互补导电类型的电荷补偿区。 包括垂直延伸的漂移路径的水平漂移路径层的掺杂位置的体积积分的漂移路径层掺杂包括布置在漂移路径层中的漂移区域和电荷补偿区域在电极附近较大， 在漂移路径的中心方向。

公开(公告)号：US20070023830A1

公开(公告)日：2007-02-01

申请号：US11435979

申请日：2006-05-17

申请人： Frank Pfirsch ,  Armin Willmeroth ,  Anton Mauder ,  Stefan Sedlmaier

发明人： Frank Pfirsch ,  Armin Willmeroth ,  Anton Mauder ,  Stefan Sedlmaier

IPC分类号： H01L29/76

CPC分类号： H01L29/7802 ,  H01L29/0634 ,  H01L29/0653 ,  H01L29/0696 ,  H01L29/0878 ,  H01L29/1095 ,  H01L29/407 ,  H01L29/41766 ,  H01L29/4916 ,  H01L29/66734 ,  H01L29/7803 ,  H01L29/7804 ,  H01L29/7813 ,  H01L29/872

摘要： A semiconductor component having a semiconductor body is disclosed. In one embodiment, the semiconductor component includes a drift zone of a first conductivity type, a drift control zone composed of a semiconductor material which is arranged adjacent to the drift zone at least in places, a dielectric which is arranged between the drift zone and the drift control zone at least in places. A quotient of the net dopant charge of the drift control zone, in an area adjacent to the accumulation dielectric and the drift zone, divided by the area of the dielectric arranged between the drift control zone and the drift zone is less than the breakdown charge of the semiconductor material in the drift control zone.

摘要翻译： 公开了一种具有半导体本体的半导体部件。 在一个实施例中，半导体部件包括第一导电类型的漂移区，由半导体材料构成的漂移控制区，该半导体材料至少位于与漂移区相邻的位置处，布置在漂移区和 漂移控制区至少在地方。 漂移控制区的净掺杂剂电荷在与积聚电介质和漂移区相邻的区域除以布置在漂移控制区和漂移区之间的介质的面积除以小于 漂移控制区中的半导体材料。

公开(公告)号：US08643086B2

公开(公告)日：2014-02-04

申请号：US13367909

申请日：2012-02-07

申请人： Frank Dieter Pfirsch ,  Armin Willmeroth ,  Anton Mauder ,  Stefan Sedlmaier

发明人： Frank Dieter Pfirsch ,  Armin Willmeroth ,  Anton Mauder ,  Stefan Sedlmaier

IPC分类号： H01L29/78

CPC分类号： H01L29/7802 ,  H01L29/0634 ,  H01L29/0653 ,  H01L29/0696 ,  H01L29/0878 ,  H01L29/1095 ,  H01L29/407 ,  H01L29/41766 ,  H01L29/4916 ,  H01L29/66734 ,  H01L29/7803 ,  H01L29/7804 ,  H01L29/7813 ,  H01L29/872

摘要： A semiconductor component having a semiconductor body is disclosed. In one embodiment, the semiconductor component includes a drift zone of a first conductivity type, a drift control zone composed of a semiconductor material which is arranged adjacent to the drift zone at least in places, a dielectric which is arranged between the drift zone and the drift control zone at least in places. A quotient of the net dopant charge of the drift control zone, in an area adjacent to the accumulation dielectric and the drift zone, divided by the area of the dielectric arranged between the drift control zone and the drift zone is less than the breakdown charge of the semiconductor material in the drift control zone.

摘要翻译： 公开了一种具有半导体本体的半导体部件。 在一个实施例中，半导体部件包括第一导电类型的漂移区，由半导体材料构成的漂移控制区，该半导体材料至少位于与漂移区相邻的位置处，布置在漂移区和 漂移控制区至少在地方。 漂移控制区的净掺杂剂电荷在与积聚电介质和漂移区相邻的区域除以布置在漂移控制区和漂移区之间的介质的面积除以小于 漂移控制区中的半导体材料。

公开(公告)号：US08193584B2

公开(公告)日：2012-06-05

申请号：US12164630

申请日：2008-06-30

申请人： Anton Mauder ,  Stefan Sedlmaier ,  Armin Willmeroth

发明人： Anton Mauder ,  Stefan Sedlmaier ,  Armin Willmeroth

IPC分类号： H01L29/76

CPC分类号： H01L29/7813 ,  H01L29/0653 ,  H01L29/0696 ,  H01L29/407 ,  H01L29/41766 ,  H01L29/7803 ,  H01L29/7804 ,  H01L29/7811

摘要： A semiconductor component including a drift zone and a drift control zone. One embodiment provides a transistor component having a drift zone, a body zone, a source zone and a drain zone. The drift zone is arranged between the body zone and the drain zone. The body zone is arranged between the source zone and the drift zone.

摘要翻译： 包括漂移区和漂移控制区的半导体组件。 一个实施例提供了具有漂移区，体区，源区和排水区的晶体管组件。 漂移区布置在身体区域和排水区之间。 身体区域布置在源区和漂移区之间。

公开(公告)号：US20090321804A1

公开(公告)日：2009-12-31

申请号：US12164630

申请日：2008-06-30

申请人： Anton Mauder ,  Stefan Sedlmaier ,  Armin Willmeroth

发明人： Anton Mauder ,  Stefan Sedlmaier ,  Armin Willmeroth

IPC分类号： H01L27/06 ,  H01L21/8234

CPC分类号： H01L29/7813 ,  H01L29/0653 ,  H01L29/0696 ,  H01L29/407 ,  H01L29/41766 ,  H01L29/7803 ,  H01L29/7804 ,  H01L29/7811

摘要： A semiconductor component including a drift zone and a drift control zone. One embodiment provides a transistor component having a drift zone, a body zone, a source zone and a drain zone. The drift zone is arranged between the body zone and the drain zone. The body zone is arranged between the source zone and the drift zone.

摘要翻译： 包括漂移区和漂移控制区的半导体组件。 一个实施例提供了具有漂移区，体区，源区和排水区的晶体管组件。 漂移区布置在身体区域和排水区之间。 身体区域布置在源区和漂移区之间。