BULK SEMICONDUCTING SCINTILLATOR DEVICE FOR RADIATION DETECTION
    11.
    发明申请
    BULK SEMICONDUCTING SCINTILLATOR DEVICE FOR RADIATION DETECTION 有权
    用于辐射检测的大容量半导体扫描仪器件

    公开(公告)号:US20140209805A1

    公开(公告)日:2014-07-31

    申请号:US14230822

    申请日:2014-03-31

    IPC分类号: G01T1/202 G01T3/08

    CPC分类号: G01T1/2023 C30B29/46 G01T3/08

    摘要: A bulk semiconducting scintillator device, including: a Li-containing semiconductor compound of general composition Li-III-VI2, wherein III is a Group III element and VI is a Group VI element; wherein the Li-containing semiconductor compound is used in one or more of a first mode and a second mode, wherein: in the first mode, the Li-containing semiconductor compound is coupled to an electrical circuit under bias operable for measuring electron-hole pairs in the Li-containing semiconductor compound in the presence of neutrons and the Li-containing semiconductor compound is also coupled to current detection electronics operable for detecting a corresponding current in the Li-containing semiconductor compound; and, in the second mode, the Li-containing semiconductor compound is coupled to a photodetector operable for detecting photons generated in the Li-containing semiconductor compound in the presence of the neutrons.

    摘要翻译: 一种散装半导体闪烁体装置,包括:一般组成为Li-III-VI2的含Li半导体化合物,其中III为III族元素,VI为VI族元素; 其中所述含Li半导体化合物用于第一模式和第二模式中的一个或多个,其中:在所述第一模式中,所述含Li半导体化合物耦合到可在电位 - 在存在中子的含Li半导体化合物中,并且含Li的半导体化合物也耦合到电流检测电子器件,其可操作以检测含Li半导体化合物中的对应电流; 并且在第二模式中,含Li半导体化合物耦合到可在中子存在的情况下检测在含Li半导体化合物中产生的光子的光电检测器。

    Rechargeable solid state neutron detector and visible radiation indicator

    公开(公告)号:US09658350B2

    公开(公告)日:2017-05-23

    申请号:US14729715

    申请日:2015-06-03

    摘要: A radiation detection device, including: a support structure; and a chalcopyrite crystal coupled to the support structure; wherein, when the chalcopyrite crystal is exposed to radiation, a visible spectrum of the chalcopyrite crystal changes from an initial color to a modified color. The visible spectrum of the chalcopyrite crystal is changed back from the modified color to the initial color by annealing the chalcopyrite crystal at an elevated temperature below a melting point of the chalcopyrite crystal over time. The chalcopyrite crystal is optionally a 6LiInSe2 crystal. The radiation is comprised of neutrons that decrease the 6Li concentration of the chalcopyrite crystal via a 6Li(n,α) reaction. The initial color is yellow and the modified color is one of orange and red. The annealing temperature is between about 450 degrees C. and about 650 degrees C. and the annealing time is between about 12 hrs and about 36 hrs.

    Surface treatment and protection method for cadmium zinc telluride crystals
    15.
    发明授权
    Surface treatment and protection method for cadmium zinc telluride crystals 失效
    碲化锌晶体的表面处理和保护方法

    公开(公告)号:US07001849B2

    公开(公告)日:2006-02-21

    申请号:US10326430

    申请日:2002-12-19

    IPC分类号: H01L21/302

    摘要: A method for treatment of the surface of a CdZnTe (CZT) crystal that provides a native dielectric coating to reduce surface leakage currents and thereby, improve the resolution of instruments incorporating detectors using CZT crystals. A two step process is disclosed, etching the surface of a CZT crystal with a solution of the conventional bromine/methanol etch treatment, and after attachment of electrical contacts, passivating the CZT crystal surface with a solution of 10 w/o NH4F and 10 w/o H2O2 in water.

    摘要翻译: 一种用于处理CdZnTe(CZT)晶体表面的方法,其提供天然电介质涂层以减少表面泄漏电流,从而提高使用CZT晶体的检测器的分辨率。 公开了两步法,用常规溴/甲醇蚀刻处理的溶液蚀刻CZT晶体的表面,并且在电接触附着之后,用10w / o NH 3溶液钝化CZT晶体表面, 4°F和10w / o 2 H 2 O 2在水中。

    Method for surface treatment of a cadmium zinc telluride crystal
    16.
    发明授权
    Method for surface treatment of a cadmium zinc telluride crystal 失效
    碲化锌晶体表面处理方法

    公开(公告)号:US5933706A

    公开(公告)日:1999-08-03

    申请号:US864133

    申请日:1997-05-28

    IPC分类号: H01L21/465 H01L21/00

    CPC分类号: H01L21/465

    摘要: A method for treatment of the surface of a CdZnTe (CZT) crystal that reduces surface roughness (increases surface planarity) and provides an oxide coating to reduce surface leakage currents and thereby, improve resolution. A two step process is disclosed, etching the surface of a CZT crystal with a solution of lactic acid and bromine in ethylene glycol, following the conventional bromine/methanol etch treatment, and after attachment of electrical contacts, oxidizing the CZT crystal surface.

    摘要翻译: 一种用于处理CdZnTe(CZT)晶体的表面的方法,其减少表面粗糙度(增加表面平面度)并提供氧化物涂层以减少表面漏电流,从而提高分辨率。 公开了两步法,在常规溴/甲醇蚀刻处理之后,在电接点氧化CZT晶体表面之后,用乳酸和溴溶液在乙二醇中蚀刻CZT晶体的表面。

    Crystal face temperature determination means
    17.
    发明授权
    Crystal face temperature determination means 失效
    水晶面温度测定手段

    公开(公告)号:US5365876A

    公开(公告)日:1994-11-22

    申请号:US11634

    申请日:1993-02-01

    IPC分类号: C30B23/00 C30B25/16

    CPC分类号: C30B25/16 C30B23/002

    摘要: An optically transparent furnace (10) having a detection apparatus (29) with a pedestal (12) enclosed in an evacuated ampule (16) for growing a crystal (14) thereon. Temperature differential is provided by a source heater (20), a base heater (24) and a cold finger (26) such that material migrates from a polycrystalline source material (18) to grow the crystal (14). A quartz halogen lamp (32) projects a collimated beam (30) onto the crystal (14) and a reflected beam (34) is analyzed by a double monochromator and photomultiplier detection spectrometer (40) and the detected peak position (48) in the reflected energy spectrum (44) of the reflected beam (34) is interpreted to determine surface temperature of the crystal (14).

    摘要翻译: 具有检测装置(29)的光学透明炉(10),其具有封闭在真空安瓿(16)中的基座(12),用于在其上生长晶体(14)。 温度差异由源加热器(20),基底加热器(24)和冷指(26)提供,使得材料从多晶源材料(18)迁移以生长晶体(14)。 石英卤素灯(32)将准直光束(30)投射到晶体(14)上,并且通过双重单色仪和光电倍增管检测光谱仪(40)和检测到的峰值位置(48)来分析反射光束(34) 反射光束(34)的反射能谱(44)被解释为确定晶体(14)的表面温度。

    Bulk semiconducting scintillator device for radiation detection
    19.
    发明授权
    Bulk semiconducting scintillator device for radiation detection 有权
    用于辐射检测的散装半导体闪烁体装置

    公开(公告)号:US09429662B2

    公开(公告)日:2016-08-30

    申请号:US14230822

    申请日:2014-03-31

    CPC分类号: G01T1/2023 C30B29/46 G01T3/08

    摘要: A bulk semiconducting scintillator device, including: a Li-containing semiconductor compound of general composition Li-III-VI2, wherein III is a Group III element and VI is a Group VI element; wherein the Li-containing semiconductor compound is used in one or more of a first mode and a second mode, wherein: in the first mode, the Li-containing semiconductor compound is coupled to an electrical circuit under bias operable for measuring electron-hole pairs in the Li-containing semiconductor compound in the presence of neutrons and the Li-containing semiconductor compound is also coupled to current detection electronics operable for detecting a corresponding current in the Li-containing semiconductor compound; and, in the second mode, the Li-containing semiconductor compound is coupled to a photodetector operable for detecting photons generated in the Li-containing semiconductor compound in the presence of the neutrons.

    摘要翻译: 一种散装半导体闪烁体装置,包括:一般组成为Li-III-VI2的含Li半导体化合物,其中III为III族元素,VI为VI族元素; 其中所述含Li半导体化合物用于第一模式和第二模式中的一个或多个,其中:在所述第一模式中,所述含Li半导体化合物耦合到可在电位 - 在存在中子的含Li半导体化合物中,并且含Li的半导体化合物也耦合到电流检测电子器件,其可操作以检测含Li半导体化合物中的对应电流; 并且在第二模式中,含Li半导体化合物耦合到可在中子存在的情况下检测在含Li半导体化合物中产生的光子的光电检测器。