公开(公告)号：US06921914B2

公开(公告)日：2005-07-26

申请号：US10802185

申请日：2004-03-17

申请人： Zhi-Yuan Cheng ,  Eugene A. Fitzgerald ,  Dimitri A. Antoniadis ,  Judy L. Hoyt

发明人： Zhi-Yuan Cheng ,  Eugene A. Fitzgerald ,  Dimitri A. Antoniadis ,  Judy L. Hoyt

IPC分类号： H01L21/205 ,  H01L21/02 ,  H01L21/20 ,  H01L21/762 ,  H01L27/12 ,  H01L29/06 ,  H01L31/0328 ,  H01L31/0336 ,  H01L31/072 ,  H01L31/109

CPC分类号： H01L21/76254 ,  H01L21/02381 ,  H01L21/0245 ,  H01L21/02502 ,  H01L21/0251 ,  H01L21/02521 ,  H01L21/02532 ,  H01L21/02546 ,  Y10S438/933

摘要： A process for producing monocrystalline semiconductor layers. In an exemplary embodiment, a graded Si1-xGex (x increases from 0 to y) is deposited on a first silicon substrate, followed by deposition of a relaxed Si1-yGey layer, a thin strained Si1-zGez layer and another relaxed Si1-yGey layer. Hydrogen ions are then introduced into the strained SizGez layer. The relaxed Si1-yGey layer is bonded to a second oxidized substrate. An annealing treatment splits the bonded pair at the strained Si layer, such that the second relaxed Si1-yGey layer remains on the second substrate. In another exemplary embodiment, a graded Si1-xGex is deposited on a first silicon substrate, where the Ge concentration x is increased from 0 to 1. Then a relaxed GaAs layer is deposited on the relaxed Ge buffer. As the lattice constant of GaAs is close to that of Ge, GaAs has high quality with limited dislocation defects. Hydrogen ions are introduced into the relaxed GaAs layer at the selected depth. The relaxed GaAs layer is bonded to a second oxidized substrate. An annealing treatment splits the bonded pair at the hydrogen ion rich layer, such that the upper portion of relaxed GaAs layer remains on the second substrate.

摘要翻译： 一种制造单晶半导体层的方法。 在示例性实施例中，分级的Si 1-x N x X x（x从0增加到y）沉积在第一硅衬底上，随后沉积弛豫的Si 1-y-Ge层，薄的应变Si 1-z N z z层和另一个松弛的Si < SUB 1-y＆lt; Y＆gt; y＆lt;层＆gt;层。 然后将氢离子引入应变的Si z z z z层中。 松弛的Si 1-y Ge 2 Y层结合到第二氧化衬底上。 退火处理在应变Si层处分离结合对，使得第二弛豫Si 1-y Ge 2层保留在第二基板上。 在另一个示例性实施例中，在第一硅衬底上沉积渐变的Si 1-x N x Ge x Ge，其中Ge浓度x从0增加到1.然后放松 GaAs层沉积在松弛的Ge缓冲器上。 由于GaAs的晶格常数接近于Ge，所以GaAs具有高质量和有限的位错缺陷。 在所选择的深度处将氢离子引入到松弛的GaAs层中。 松弛的GaAs层结合到第二氧化衬底上。 退火处理在氢离子富集层处分离结合对，使得松弛的GaAs层的上部保留在第二基板上。

公开(公告)号：US06573126B2

公开(公告)日：2003-06-03

申请号：US09928126

申请日：2001-08-10

申请人： Zhi-Yuan Cheng ,  Eugene A. Fitzgerald ,  Dimitri A. Antoniadis ,  Judy L. Hoyt

发明人： Zhi-Yuan Cheng ,  Eugene A. Fitzgerald ,  Dimitri A. Antoniadis ,  Judy L. Hoyt

IPC分类号： H01L2100

CPC分类号： H01L21/76254 ,  H01L21/02381 ,  H01L21/0245 ,  H01L21/02502 ,  H01L21/0251 ,  H01L21/02521 ,  H01L21/02532 ,  H01L21/02546 ,  Y10S438/933

摘要： A process for producing monocrystalline semiconductor layers. In an exemplary embodiment, a graded Si1−xGex (x increases from 0 to y) is deposited on a first silicon substrate, followed by deposition of a relaxed Si1−yGey layer, a thin strained Si1−zGez layer and another relaxed Si1−yGey layer. Hydrogen ions are then introduced into the strained SizGez layer. The relaxed Si1−yGey layer is bonded to a second oxidized substrate. An annealing treatment splits the bonded pair at the strained Si layer, such that the second relaxed Si1−yGey layer remains on the second substrate. In another exemplary embodiment, a graded Si1−xGex is deposited on a first silicon substrate, where the Ge concentration x is increased from 0 to 1. Then a relaxed GaAs layer is deposited on the relaxed Ge buffer. As the lattice constant of GaAs is close to that of Ge, GaAs has high quality with limited dislocation defects. Hydrogen ions are introduced into the relaxed GaAs layer at the selected depth. The relaxed GaAs layer is bonded to a second oxidized substrate. An annealing treatment splits the bonded pair at the hydrogen ion rich layer, such that the upper portion of relaxed GaAs layer remains on the second substrate.