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1.发明授权公开(公告)号：US06921914B2
公开(公告)日：2005-07-26
申请号：US10802185
申请日：2004-03-17
IPC分类号： H01L21/205 , H01L21/02 , H01L21/20 , H01L21/762 , H01L27/12 , H01L29/06 , H01L31/0328 , H01L31/0336 , H01L31/072 , H01L31/109
CPC分类号： H01L21/76254 , H01L21/02381 , H01L21/0245 , H01L21/02502 , H01L21/0251 , H01L21/02521 , H01L21/02532 , H01L21/02546 , Y10S438/933
摘要： A process for producing monocrystalline semiconductor layers. In an exemplary embodiment, a graded Si1-xGex (x increases from 0 to y) is deposited on a first silicon substrate, followed by deposition of a relaxed Si1-yGey layer, a thin strained Si1-zGez layer and another relaxed Si1-yGey layer. Hydrogen ions are then introduced into the strained SizGez layer. The relaxed Si1-yGey layer is bonded to a second oxidized substrate. An annealing treatment splits the bonded pair at the strained Si layer, such that the second relaxed Si1-yGey layer remains on the second substrate. In another exemplary embodiment, a graded Si1-xGex is deposited on a first silicon substrate, where the Ge concentration x is increased from 0 to 1. Then a relaxed GaAs layer is deposited on the relaxed Ge buffer. As the lattice constant of GaAs is close to that of Ge, GaAs has high quality with limited dislocation defects. Hydrogen ions are introduced into the relaxed GaAs layer at the selected depth. The relaxed GaAs layer is bonded to a second oxidized substrate. An annealing treatment splits the bonded pair at the hydrogen ion rich layer, such that the upper portion of relaxed GaAs layer remains on the second substrate.
摘要翻译： 一种制造单晶半导体层的方法。 在示例性实施例中，分级的Si 1-x N x X x（x从0增加到y）沉积在第一硅衬底上，随后沉积弛豫的Si 1-y-Ge层，薄的应变Si 1-z N z z层和另一个松弛的Si < SUB 1-y＆lt; Y＆gt; y＆lt;层＆gt;层。 然后将氢离子引入应变的Si z z z z层中。 松弛的Si 1-y Ge 2 Y层结合到第二氧化衬底上。 退火处理在应变Si层处分离结合对，使得第二弛豫Si 1-y Ge 2层保留在第二基板上。 在另一个示例性实施例中，在第一硅衬底上沉积渐变的Si 1-x N x Ge x Ge，其中Ge浓度x从0增加到1.然后放松 GaAs层沉积在松弛的Ge缓冲器上。 由于GaAs的晶格常数接近于Ge，所以GaAs具有高质量和有限的位错缺陷。 在所选择的深度处将氢离子引入到松弛的GaAs层中。 松弛的GaAs层结合到第二氧化衬底上。 退火处理在氢离子富集层处分离结合对，使得松弛的GaAs层的上部保留在第二基板上。
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公开(公告)号：US06573126B2
公开(公告)日：2003-06-03
申请号：US09928126
申请日：2001-08-10
IPC分类号： H01L2100
CPC分类号： H01L21/76254 , H01L21/02381 , H01L21/0245 , H01L21/02502 , H01L21/0251 , H01L21/02521 , H01L21/02532 , H01L21/02546 , Y10S438/933
摘要： A process for producing monocrystalline semiconductor layers. In an exemplary embodiment, a graded Si1−xGex (x increases from 0 to y) is deposited on a first silicon substrate, followed by deposition of a relaxed Si1−yGey layer, a thin strained Si1−zGez layer and another relaxed Si1−yGey layer. Hydrogen ions are then introduced into the strained SizGez layer. The relaxed Si1−yGey layer is bonded to a second oxidized substrate. An annealing treatment splits the bonded pair at the strained Si layer, such that the second relaxed Si1−yGey layer remains on the second substrate. In another exemplary embodiment, a graded Si1−xGex is deposited on a first silicon substrate, where the Ge concentration x is increased from 0 to 1. Then a relaxed GaAs layer is deposited on the relaxed Ge buffer. As the lattice constant of GaAs is close to that of Ge, GaAs has high quality with limited dislocation defects. Hydrogen ions are introduced into the relaxed GaAs layer at the selected depth. The relaxed GaAs layer is bonded to a second oxidized substrate. An annealing treatment splits the bonded pair at the hydrogen ion rich layer, such that the upper portion of relaxed GaAs layer remains on the second substrate.
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3.发明申请公开(公告)号：US20050009288A1
公开(公告)日：2005-01-13
申请号：US10802186
申请日：2004-03-17
IPC分类号： H01L21/205 , H01L21/02 , H01L21/20 , H01L21/762 , H01L27/12 , H01L21/00 , C30B1/00 , H01L21/46 , H01L21/84
CPC分类号： H01L21/76254 , H01L21/02381 , H01L21/0245 , H01L21/02502 , H01L21/0251 , H01L21/02521 , H01L21/02532 , H01L21/02546 , Y10S438/933
摘要： A process for producing monocrystalline semiconductor layers. In an exemplary embodiment, a graded Si1-xGex (x increases from 0 to y) is deposited on a first silicon substrate, followed by deposition of a relaxed Si1-yGey layer, a thin strained Si1-zGez layer and another relaxed Si1-yGey layer. Hydrogen ions are then introduced into the strained SizGez layer. The relaxed Si1-yGey layer is bonded to a second oxidized substrate. An annealing treatment splits the bonded pair at the strained Si layer, such that the second relaxed Si1-yGey layer remains on the second substrate. In another exemplary embodiment, a graded SixGex is deposited on a first silicon substrate, where the Ge concentration x is increased from 0 to 1. Then a relaxed GaAs layer is deposited on the relaxed Ge buffer. As the lattice constant of GaAs is close to that of Ge, GaAs has high quality with limited dislocation defects. Hydrogen ions are introduced into the relaxed GaAs layer at the selected depth. The relaxed GaAs layer is bonded to a second oxidized substrate. An annealing treatment splits the bonded pair at the hydrogen ion rich layer, such that the upper portion of relaxed GaAs layer remains on the second substrate.
摘要翻译： 一种制造单晶半导体层的方法。 在示例性实施例中，分级的Si1-xGex（x从0增加到y）沉积在第一硅衬底上，随后沉积弛豫的Si1-yGey层，薄的应变Si1-zGez层和另一个弛豫的Si1-yGey 层。 然后将氢离子引入应变SizGez层。 松弛的Si1-yGey层与第二氧化基底结合。 退火处理在接合的Si层处分离结合对，使得第二弛豫Si1-yGey层保留在第二基板上。 在另一个示例性实施例中，分级的SixGex沉积在第一硅衬底上，其中Ge浓度x从0增加到1.然后在弛豫的Ge缓冲器上沉积弛豫的GaAs层。 由于GaAs的晶格常数接近于Ge，所以GaAs具有高质量和有限的位错缺陷。 在所选择的深度处将氢离子引入到松弛的GaAs层中。 松弛的GaAs层结合到第二氧化衬底上。 退火处理在氢离子富集层处分离结合对，使得松弛的GaAs层的上部保留在第二基板上。
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4.发明申请Solutions for integrated circuit integration of alternative active area materials 有权集成电路集成替代有源区材料的解决方案公开(公告)号：US20070181977A1
公开(公告)日：2007-08-09
申请号：US11493365
申请日：2006-07-26
CPC分类号： H01L21/823807 , H01L21/823814 , H01L21/823842 , H01L21/8258 , H01L27/0605 , H01L29/1054 , H01L29/165 , H01L29/66636 , H01L29/7833 , H01L29/7834 , H01L29/7848 , H01L2924/0002 , H01L2924/00
摘要： Methods of forming areas of alternative material on crystalline semiconductor substrates, and structures formed thereby. Such areas of alternative material are suitable for use as active areas in MOSFETs or other electronic or opto-electronic devices.
摘要翻译： 在晶体半导体衬底上形成替代材料的区域的方法，以及由此形成的结构。 这种替代材料的领域适合用作MOSFET或其他电子或光电子器件中的有源区域。
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5.发明授权Solutions for integrated circuit integration of alternative active area materials 有权集成电路集成替代有源区材料的解决方案公开(公告)号：US07626246B2
公开(公告)日：2009-12-01
申请号：US11493365
申请日：2006-07-26
IPC分类号： H01L23/58
CPC分类号： H01L21/823807 , H01L21/823814 , H01L21/823842 , H01L21/8258 , H01L27/0605 , H01L29/1054 , H01L29/165 , H01L29/66636 , H01L29/7833 , H01L29/7834 , H01L29/7848 , H01L2924/0002 , H01L2924/00
摘要： Methods of forming areas of alternative material on crystalline semiconductor substrates, and structures formed thereby. Such areas of alternative material are suitable for use as active areas in MOSFETs or other electronic or opto-electronic devices.
摘要翻译： 在晶体半导体衬底上形成替代材料的区域的方法，以及由此形成的结构。 这种替代材料的领域适合用作MOSFET或其他电子或光电子器件中的有源区域。
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公开(公告)号：US06737670B2
公开(公告)日：2004-05-18
申请号：US10384160
申请日：2003-03-07
IPC分类号： H01L2906
CPC分类号： H01L21/76254 , H01L21/02381 , H01L21/0245 , H01L21/02502 , H01L21/0251 , H01L21/02521 , H01L21/02532 , H01L21/02546 , Y10S438/933
摘要： A process for producing monocrystalline semiconductor layers. In an exemplary embodiment, a graded Si1−xGex (x increases from 0 to y) is deposited on a first silicon substrate, followed by deposition of a relaxed Si1−yGey layer, a thin strained Si1−zGez layer and another relaxed Si1−yGey layer. Hydrogen ions are then introduced into the strained SizGez layer. The relaxed Si1−yGey layer is bonded to a second oxidized substrate. An annealing treatment splits the bonded pair at the strained Si layer, such that the second relaxed Si1−yGey layer remains on the second substrate. In another exemplary embodiment, a graded Si1−xGex is deposited on a first silicon substrate, where the Ge concentration x is increased from 0 to 1. Then a relaxed GaAs layer is deposited on the relaxed Ge buffer. As the lattice constant of GaAs is close to that of Ge, GaAs has high quality with limited dislocation defects. Hydrogen ions are introduced into the relaxed GaAs layer at the selected depth. The relaxed GaAs layer is bonded to a second oxidized substrate. An annealing treatment splits the bonded pair at the hydrogen ion rich layer, such that the upper portion of relaxed GaAs layer remains on the second substrate.
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7.发明授权公开(公告)号：US06713326B2
公开(公告)日：2004-03-30
申请号：US10379355
申请日：2003-03-04
IPC分类号： H01L2100
CPC分类号： H01L21/76254 , H01L21/02381 , H01L21/0245 , H01L21/02502 , H01L21/0251 , H01L21/02521 , H01L21/02532 , H01L21/02546 , Y10S438/933
摘要： A process for producing monocrystalline semiconductor layers. In an exemplary embodiment, a graded Si1−xGex (x increases from 0 to y) is deposited on a first silicon substrate, followed by deposition of a relaxed Si1−yGey layer, a thin strained Si1−zGez layer and another relaxed Si1−yGey layer. Hydrogen ions are then introduced into the strained SizGez layer. The relaxed Si1−yGey layer is bonded to a second oxidized substrate. An annealing treatment splits the bonded pair at the strained Si layer, such that the second relaxed Si1−yGey layer remains on the second substrate. In another exemplary embodiment, a graded Si1−xGex is deposited on a first silicon substrate, where the Ge concentration x is increased from 0 to 1. Then a relaxed GaAs layer is deposited on the relaxed Ge buffer. As the lattice constant of GaAs is close to that of Ge, GaAs has high quality with limited dislocation defects. Hydrogen ions are introduced into the relaxed GaAs layer at the selected depth. The relaxed GaAs layer is bonded to a second oxidized substrate. An annealing treatment splits the bonded pair at the hydrogen ion rich layer, such that the upper portion of relaxed GaAs layer remains on the second substrate.
摘要翻译： 一种制造单晶半导体层的方法。 在示例性实施例中，分级的Si1-xGex（x从0增加到y）沉积在第一硅衬底上，随后沉积弛豫的Si1-yGey层，薄的应变Si1-zGez层和另一个弛豫的Si1-yGey 层。 然后将氢离子引入应变SizGez层。 松弛的Si1-yGey层与第二氧化基底结合。 退火处理在接合的Si层处分离结合对，使得第二弛豫Si1-yGey层保留在第二基板上。 在另一个示例性实施例中，分级的Si1-xGex沉积在第一硅衬底上，其中Ge浓度x从0增加到1.然后在弛豫的Ge缓冲器上沉积弛豫的GaAs层。 由于GaAs的晶格常数接近于Ge，所以GaAs具有高质量和有限的位错缺陷。 在所选择的深度处将氢离子引入到松弛的GaAs层中。 松弛的GaAs层结合到第二氧化衬底上。 退火处理在氢离子富集层处分离结合对，使得松弛的GaAs层的上部保留在第二基板上。
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