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    Radiation tolerant solid-state relay
    11.
    发明授权
    Radiation tolerant solid-state relay 失效

    公开(公告)号：US07132877B2

    公开(公告)日：2006-11-07

    申请号：US10963957

    申请日：2004-10-12

    Applicant: Steven E. Summer

    Inventor： Steven E. Summer

    IPC: H03K17/687

    CPC classification number: H03K17/691

    Abstract: The present invention provides a radiation-tolerant-solid-state-relay without radiation-hardened parts. A p-channel MOSFET provides power-switching functionality. In further detail, the solid-state-relay comprises a bias section, a control section, and a power-switch section. The bias section provides a voltage bias to the control section, the control section provides a control voltage to the power switch section as a function of the voltage bias, and the power switch section provides a switching voltage to the P-channel MOSFET as a function of the control voltage.

    RADIATION HARDENED ACTIVE OR CIRCUIT
    13.
    发明申请
    RADIATION HARDENED ACTIVE OR CIRCUIT 审中-公开
    辐射硬化主动或电路

    公开(公告)号：US20160013640A1

    公开(公告)日：2016-01-14

    申请号：US14330867

    申请日：2014-07-14

    Applicant: Steven E. Summer

    Inventor： Steven E. Summer

    IPC: H02J1/00 ,  H02M3/155

    CPC classification number: H02M3/1563

    Abstract: A radiation hardened active OR circuit for providing a controlled electrical response in radiation-intensive applications. The circuit can include a first voltage source; a second voltage source; a comparator for sampling the first voltage source and the second voltage source; a first switch; and a second switch. The comparator can select a higher magnitude of the first voltage source and the second voltage source and connects the higher magnitude of the first voltage source and the second voltage source to a common output by steering a drive signal to one of the first switch or the second switch.

    Abstract translation: 辐射硬化的有源OR电路，用于在辐射密集型应用中提供受控的电气响应。 电路可以包括第一电压源; 第二电压源; 用于对所述第一电压源和所述第二电压源进行采样的比较器; 第一个开关 和第二开关。 比较器可以选择较大幅度的第一电压源和第二电压源，并且通过将驱动信号转向第一开关或第二电压源中的一个将第一电压源和第二电压源的较高幅度连接到公共输出端 开关。

    Radiation hardened motor drive stage
    14.
    发明申请
    Radiation hardened motor drive stage 有权
    辐射硬化电机驱动级

    公开(公告)号：US20110156628A1

    公开(公告)日：2011-06-30

    申请号：US12655239

    申请日：2009-12-28

    Applicant: Steven E. Summer

    Inventor： Steven E. Summer

    IPC: H02P6/14

    CPC classification number: H03K17/22 ,  H03K17/6871 ,  H03K2017/0803 ,  H03K2217/0081

    Abstract: A radiation hardened motor drive stage utilizes a non-radiation hardened P-channel FET switch. The radiation hardened motor drive stage includes a non-radiation hardened P-channel FET switch that is connected three (3) pairs of upper and lower switch blocks or legs wherein the output of each pair is connected to a motor winding switch terminal. The upper switch blocks or legs are connected the P-channel switch a. The lower switch block or legs are connected to a negative power bus. The negative power bus permits the N-channel FETS or IGTS within the switch blocks or legs exposed to ionized radiation to be controlled, even when their gate threshold voltage has dropped below zero volts.

    Abstract translation: 辐射硬化电机驱动级采用非辐射硬化的P沟道FET开关。 辐射硬化电机驱动级包括一个非辐射硬化的P沟道FET开关，其连接三（3）对上，下开关块或支脚，其中每对的输出连接到电动机绕组开关端子。 上开关块或支脚连接P通道开关a。 下开关块或支脚连接到负电源总线。 负电源总线允许控制暴露于电离辐射的开关块或支脚内的N沟道FET或IGTS，即使它们的栅极阈值电压已经降至零伏特以下。

    Method and apparatus for implementing a radiation hardened N-channel transistor with the use of non-radiation hardened transistors
    16.
    发明授权
    Method and apparatus for implementing a radiation hardened N-channel transistor with the use of non-radiation hardened transistors 有权
    使用非辐射硬化晶体管实现辐射硬化N沟道晶体管的方法和装置

    公开(公告)号：US07215174B1

    公开(公告)日：2007-05-08

    申请号：US11295985

    申请日：2005-12-07

    Applicant: Steven E. Summer

    Inventor： Steven E. Summer

    IPC: H03K17/687

    CPC classification number: H03K17/687 ,  H03K17/302 ,  H03K2017/0803

    Abstract: A non-radiation hardened N-channel transistor used in a power switching circuit functioning in a high-ionizing, radiation-dose environment. The circuit including at least one non-radiation hardened N-channel MOSFET switching transistors, the transistor having a gate, drain and a source. The circuit also includes a stored voltage source. The stored voltage source is in series with the gate of the at least one non-radiation hardened N channel MOSFET switching transistors. A high impedance bleeder resistor is connected to the stored voltage source for returning the positive terminal of the stored voltage source to the channel MOSFET source terminal.

    Abstract translation: 用于在高电离辐射剂量环境中工作的功率开关电路中的非辐射硬化N沟道晶体管。 该电路包括至少一个非辐射硬化的N沟道MOSFET开关晶体管，晶体管具有栅极，漏极和源极。 该电路还包括存储的电压源。 存储的电压源与至少一个非辐射固化的N沟道MOSFET开关晶体管的栅极串联。 高阻抗放电电阻连接到存储的电压源，用于将存储的电压源的正极端返回到沟道MOSFET源极端子。

    Luminaire system
    17.
    发明授权
    Luminaire system 失效
    灯具系统

    公开(公告)号：US4999545A

    公开(公告)日：1991-03-12

    申请号：US504297

    申请日：1990-04-04

    Applicant: Steven E. Summer

    Inventor： Steven E. Summer

    IPC: H05B41/04 ,  H05B41/288

    CPC classification number: H05B41/042 ,  H05B41/288 ,  Y10S315/05

    Abstract: A portable high pressure sodium lamp lighting system is mounted on a mobile cart, the cart carrying a mobile power supply in the form of a automotive type battery. The portable lighting system employs a standard high pressure sodium luminaire designed to be driven by 115 volt 60 cycle utility generated power. A DC to AC converter is employed which converts the DC battery supply to a 115 volt simulated 60 cycle supply. The AC characteristic is simulated by generating a quasi-square wave form which approximates a 60 cycle characteristic when driving the luminaire.

    Abstract translation: 便携式高压钠灯照明系统安装在移动车上，该车载有汽车型电池形式的移动电源。 便携式照明系统采用标准的高压钠灯，设计为由115伏60周期公用事业产生的电力驱动。 采用直流到交流转换器，将直流电池电源转换为115伏模拟60周期电源。 AC特性通过产生近似于驱动灯具时的60周期特性的准方波来形成。

    Radiation hardened DC-DC converter for operation at cryogenic temperatures
    19.
    发明授权
    Radiation hardened DC-DC converter for operation at cryogenic temperatures 有权

    公开(公告)号：US10090667B2

    公开(公告)日：2018-10-02

    申请号：US15595190

    申请日：2017-05-15

    Applicant: Steven E. Summer

    Inventor： Steven E. Summer

    IPC: H02M3/335 ,  H02H5/00 ,  H02H5/04 ,  H02M3/28 ,  H02M1/00

    Abstract: A radiation-hardened DC-DC converter capable of operating at cryogenic temperatures in high radiation environments. The radiation-hardened DC-DC converter can include an input side, the input side producing a high frequency AC voltage; a transformer; and an output side, the output side including a magnetic amplifier, wherein the pre-regulated high frequency AC voltage is fed to the magnetic amplifier through the transformer allowing the magnetic amplifier to provide a pulse width modulation function for voltage regulation.

    Radiation hardened active or circuit
    20.
    发明授权
    Radiation hardened active or circuit 有权

    公开(公告)号：US09735675B2

    公开(公告)日：2017-08-15

    申请号：US14330867

    申请日：2014-07-14

    Applicant: Steven E. Summer

    Inventor： Steven E. Summer

    IPC: H02J1/00 ,  H02M3/155 ,  H02M3/156

    CPC classification number: H02M3/1563

    Abstract: A radiation hardened active OR circuit for providing a controlled electrical response in radiation-intensive applications. The circuit can include a first voltage source; a second voltage source; a comparator for sampling the first voltage source and the second voltage source; a first switch; and a second switch. The comparator can select a higher magnitude of the first voltage source and the second voltage source and connects the higher magnitude of the first voltage source and the second voltage source to a common output by steering a drive signal to one of the first switch or the second switch.

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