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89 条记录 (耗时 0.023 秒)

    Channel layers and semiconductor devices including the same
    11.
    发明申请
    Channel layers and semiconductor devices including the same 有权
    通道层和包括其的半导体器件

    公开(公告)号：US20100006834A1

    公开(公告)日：2010-01-14

    申请号：US12458491

    申请日：2009-07-14

    申请人： Sun-il Kim ,  I-hun Song ,  Chang-jung Kim ,  Jae-chul Park ,  Sang-wook Kim

    发明人： Sun-il Kim ,  I-hun Song ,  Chang-jung Kim ,  Jae-chul Park ,  Sang-wook Kim

    IPC分类号： H01L29/26 ,  H01L29/786

    CPC分类号： H01L29/7869 ,  H01L29/78696

    摘要： Channel layers and semiconductor devices including the channel layers are disclosed. A channel layer may include a multi-layered structure. Layers forming the channel layer may have different carrier mobilities and/or carrier densities. The channel layer may have a double layered structure including a first layer and a second layer which may be formed of different oxides. Characteristics of the transistor may vary according to materials used to form the channel layers and/or thicknesses thereof.

    摘要翻译： 公开了包括沟道层的通道层和半导体器件。 沟道层可以包括多层结构。 形成沟道层的层可具有不同的载流子迁移率和/或载流子密度。 沟道层可以具有双层结构，其包括可由不同氧化物形成的第一层和第二层。 晶体管的特性可以根据用于形成沟道层的材料和/或其厚度而变化。

    Transistor and method of manufacturing the same
    12.
    发明申请
    Transistor and method of manufacturing the same 有权
    晶体管及其制造方法

    公开(公告)号：US20090224238A1

    公开(公告)日：2009-09-10

    申请号：US12289252

    申请日：2008-10-23

    申请人： Sun-il Kim ,  Young-soo Park ,  I-hun Song ,  Chang-jung Kim ,  Jae-chul Park ,  Sang-wook Kim

    发明人： Sun-il Kim ,  Young-soo Park ,  I-hun Song ,  Chang-jung Kim ,  Jae-chul Park ,  Sang-wook Kim

    IPC分类号： H01L29/786 ,  H01L21/336

    CPC分类号： H01L29/7869

    摘要： A transistor according to example embodiments may include a channel layer, a source and a drain respectively contacting ends of the channel layer, a gate electrode separated from the channel layer, a gate insulating layer interposed between the channel layer and the gate electrode, and/or an insertion layer that is formed between the channel layer and the gate insulating layer. The insertion layer may have a work function different from that of the channel layer.

    摘要翻译： 根据示例实施例的晶体管可以包括沟道层，分别接触沟道层的端部的源极和漏极，与沟道层分离的栅电极，介于沟道层和栅电极之间的栅极绝缘层和/ 或形成在沟道层和栅极绝缘层之间的插入层。 插入层可以具有与沟道层不同的功函数。

    Thin film transistors and methods of manufacturing the same
    14.
    发明申请
    Thin film transistors and methods of manufacturing the same 有权
    薄膜晶体管及其制造方法

    公开(公告)号：US20080191204A1

    公开(公告)日：2008-08-14

    申请号：US11987499

    申请日：2007-11-30

    申请人： Sun-il Kim ,  Young-soo Park ,  Jae-chul Park

    发明人： Sun-il Kim ,  Young-soo Park ,  Jae-chul Park

    IPC分类号： H01L29/12 ,  H01L21/84

    CPC分类号： H01L29/7869 ,  H01L29/78696

    摘要： A transistor may include: a gate insulting layer; a gate electrode formed on the gate insulating layer; a channel layer formed on the gate insulating layer; and source and drain electrodes that contact the channel layer. The channel layer may have a double-layer structure, including upper and lower layers. The upper layer may have a carrier concentration lower than the lower layer. A method of manufacturing a transistor may include: forming a channel layer on a substrate; forming source and drain electrodes on the substrate; forming a gate insulating layer on the substrate; and forming a gate electrode on the gate insulating layer above the channel layer. A method of manufacturing a transistor may include: forming a gate electrode on a substrate; forming a gate insulating layer on the substrate; forming a channel layer on the gate insulating layer; and forming source and drain electrodes on the gate insulating layer.

    摘要翻译： 晶体管可以包括：栅极绝缘层; 形成在所述栅极绝缘层上的栅电极; 形成在所述栅极绝缘层上的沟道层; 以及与沟道层接触的源极和漏极。 沟道层可以具有双层结构，包括上层和下层。 上层可以具有低于下层的载流子浓度。 制造晶体管的方法可以包括：在衬底上形成沟道层; 在基板上形成源极和漏极; 在所述基板上形成栅极绝缘层; 以及在沟道层上方的栅极绝缘层上形成栅电极。 制造晶体管的方法可以包括：在衬底上形成栅电极; 在所述基板上形成栅极绝缘层; 在所述栅极绝缘层上形成沟道层; 以及在栅极绝缘层上形成源极和漏极。

    Optical touch panels and methods of driving the same
    16.
    发明授权
    Optical touch panels and methods of driving the same 有权
    光触摸面板及其驱动方法

    公开(公告)号：US08917260B2

    公开(公告)日：2014-12-23

    申请号：US12805722

    申请日：2010-08-17

    申请人： Sun-il Kim ,  Chang-jung Kim ,  Sang-hun Jeon ,  I-hun Song ,  Jae-chul Park

    发明人： Sun-il Kim ,  Chang-jung Kim ,  Sang-hun Jeon ,  I-hun Song ,  Jae-chul Park

    IPC分类号： G06F3/042 ,  G06F3/041 ,  G06F3/038

    CPC分类号： G06F3/0412 ,  G06F3/0386

    摘要： An optical touch panel may include a plurality of light-sensing areas. The plurality of light-sensing areas may be integrally formed with pixels in a display panel or may be formed on the display panel, in order to sense incident light from outside the optical touch panel. A method of driving an optical touch panel may include sensing a change in an output from a plurality of light-sensing areas between two time points and determining that there is an optical input when the change in the output is greater than or equal to a first reference value that is defined in advance. The light-sensing areas may be integrally formed with pixels in a display panel or formed on a surface of the display panel, for sensing incident light from outside the optical touch panel.

    摘要翻译： 光学触摸面板可以包括多个感光区域。 多个感光区域可以与显示面板中的像素一体地形成，或者可以形成在显示面板上，以便感测来自光学触摸面板外部的入射光。 驱动光学触摸面板的方法可以包括：在两个时间点之间感测来自多个光感测区域的输出的变化，并且当输出的变化大于或等于第一时间点时，确定存在光学输入 提前定义的参考值。 光感测区域可以与显示面板中的像素一体地形成或形成在显示面板的表面上，用于感测来自光学触摸面板外部的入射光。

    Transistor, method of manufacturing transistor, and electronic device including transistor
    18.
    发明授权
    Transistor, method of manufacturing transistor, and electronic device including transistor 有权
    晶体管，制造晶体管的方法和包括晶体管的电子器件

    公开(公告)号：US08354670B2

    公开(公告)日：2013-01-15

    申请号：US12801531

    申请日：2010-06-14

    申请人： Sang-wook Kim ,  Sun-il Kim ,  Chang-jung Kim ,  Jae-chul Park

    发明人： Sang-wook Kim ,  Sun-il Kim ,  Chang-jung Kim ,  Jae-chul Park

    IPC分类号： H01L29/786

    CPC分类号： H01L29/7869 ,  H01L29/4908 ,  H01L29/66969 ,  H01L29/78696

    摘要： Provided are a transistor, a method of manufacturing the transistor, and an electronic device including the transistor. The transistor may include a gate insulator of which at least one surface is treated with plasma. The surface of the gate insulator may be an interface that contacts a channel layer. The interface may be treated with plasma by using a fluorine (F)-containing gas, and thus may include fluorine (F). The interface treated with plasma may suppress the characteristic variations of the transistor due to light.

    摘要翻译： 提供晶体管，晶体管的制造方法和包括该晶体管的电子器件。 晶体管可以包括栅极绝缘体，其中至少一个表面被等离子体处理。 栅极绝缘体的表面可以是与沟道层接触的界面。 界面可以通过使用含氟（F）的气体用等离子体处理，因此可以包括氟（F）。 用等离子体处理的界面可以抑制由于光引起的晶体管的特性变化。

    2D/3D switchable integral imaging systems
    19.
    发明授权
    2D/3D switchable integral imaging systems 有权
    2D / 3D可切换积分成像系统

    公开(公告)号：US08319902B2

    公开(公告)日：2012-11-27

    申请号：US12654701

    申请日：2009-12-29

    申请人： Sun-il Kim ,  Jong-min Kim

    发明人： Sun-il Kim ,  Jong-min Kim

    IPC分类号： G02F1/1335

    CPC分类号： G02F1/29 ,  G02B3/14 ,  G02B26/004 ,  G02F1/1323 ,  G02F1/13439 ,  G02F2001/294 ,  G02F2202/36 ,  H04N13/305 ,  H04N13/359

    摘要： An integral imaging system may include a lens unit. The lens unit may include a first substrate; a second substrate; a first electrode on the first substrate; a second electrode on the second substrate; a liquid crystal layer between the first and second substrates; and an array of nanostructures protruding from the first substrate into the liquid crystal layer. The first and second electrodes may be configured to apply one or more voltages to the array of nanostructures. When the one or more voltages are applied to the array of nanostructures, one or more electric fields may be formed between the array of nanostructures and the second electrode, varying an arrangement of molecules in the liquid crystal layer and forming a refractive index distribution in the liquid crystal layer.

    摘要翻译： 整体成像系统可以包括透镜单元。 透镜单元可以包括第一基板; 第二基板; 第一基板上的第一电极; 第二基板上的第二电极; 第一和第二基板之间的液晶层; 以及从第一基板突出到液晶层的纳米结构的阵列。 第一和第二电极可以被配置为向纳米结构阵列施加一个或多个电压。 当将一个或多个电压施加到纳米结构阵列时，可以在纳米结构阵列和第二电极之间形成一个或多个电场，改变液晶层中分子的排列并在其中形成折射率分布 液晶层。