公开(公告)号：US08008376B2

公开(公告)日：2011-08-30

申请号：US12086037

申请日：2005-12-07

申请人： Seung-Yeop Kwak ,  Sung-Ho Kim ,  Seok-Bong Lee

发明人： Seung-Yeop Kwak ,  Sung-Ho Kim ,  Seok-Bong Lee

IPC分类号： C08B37/00 ,  C08L3/02 ,  C08L5/16 ,  C08F251/00 ,  C08F251/02

CPC分类号： C08F14/06 ,  C08J3/18 ,  C08J2327/06 ,  C08L5/16 ,  C08L27/06 ,  C08F2/00 ,  C08L2666/26

摘要： Disclosed are plasticizer compositions including cyclodextrin derivatives, a flexible PVC composition with suppression of the migration of a plasticizer containing the same, and a manufacturing method thereof. The manufacturing method of the flexible PVC composition of the present invention includes steps of (S1) preparing cyclodextrin derivatives; (S2) mixing the cyclodextrin derivatives, PVC and a low molecular weight liquid plasticizer to form a plastisol; and (S3) heating the plastisol to form a solution and cooling the solution. The manufacturing method PVC-1 of the present invention may be useful to mass-produce flexible PVC with suppression of the migration of a plasticizer in a simple and economic manner without using solvents since the cyclodextrin derivatives are used as a compound that can suppress the migration of a plasticizer. The flexible PVC has an effect of reducing an amount of the migrated plasticizer without deterioration in its physical properties.

摘要翻译： 公开了包含环糊精衍生物的增塑剂组合物及其制备方法，该组合物抑制含有该增塑剂的增塑剂的迁移。 本发明的柔性PVC组合物的制造方法包括（S1）制备环糊精衍生物的步骤; （S2）混合环糊精衍生物，PVC和低分子量液体增塑剂以形成增塑溶胶; 和（S3）加热增塑溶胶以形成溶液并冷却溶液。 本发明的制造方法PVC-1可用于大量生产柔性PVC，其以简单经济的方式抑制增塑剂的迁移而不使用溶剂，因为环糊精衍生物用作可抑制迁移的化合物 的增塑剂。 柔性PVC具有减少迁移的增塑剂的量而不降低其物理性能的效果。

公开(公告)号：US07129591B2

公开(公告)日：2006-10-31

申请号：US10982685

申请日：2004-11-04

申请人： Sang-Su Kim ,  In-Wook Cho ,  Myeong-Cheol Kim ,  Sung-Woo Lee ,  Jin-Hee Kim ,  Doo-Youl Lee ,  Sung-Ho Kim

发明人： Sang-Su Kim ,  In-Wook Cho ,  Myeong-Cheol Kim ,  Sung-Woo Lee ,  Jin-Hee Kim ,  Doo-Youl Lee ,  Sung-Ho Kim

IPC分类号： H01L23/544

CPC分类号： H01L23/544 ,  H01L2223/54426 ,  H01L2223/54453 ,  H01L2223/5446 ,  H01L2924/0002 ,  Y10S438/975 ,  H01L2924/00

摘要： Disclosed is a semiconductor device having an align key and a method of fabricating the same. The semiconductor device includes a semiconductor substrate having a cell area and an align key area. An isolation layer that defines a cell active area is disposed in the cell area of the semiconductor substrate. A cell charge storage layer pattern is disposed across the cell active area. An align charge storage layer pattern is disposed in the align key area of the semiconductor substrate. An align trench self-aligned with the align charge storage layer pattern is formed in the align key area of the semiconductor substrate.

摘要翻译： 公开了具有对准键的半导体器件及其制造方法。 半导体器件包括具有单元区域和对准键区域的半导体衬底。 限定电池有源区的隔离层设置在半导体衬底的单元区域中。 电池电荷存储层图案跨越电池有源区域设置。 对准电荷存储层图案设置在半导体衬底的对准键区域中。 在对准电荷存储层图案中自对准的对准沟槽形成在半导体衬底的对准键区域中。

公开(公告)号：US08674359B2

公开(公告)日：2014-03-18

申请号：US13079611

申请日：2011-04-04

申请人： Dae-Hyun Noh ,  Sung-Ho Kim

发明人： Dae-Hyun Noh ,  Sung-Ho Kim

IPC分类号： H01L29/04 ,  H01L29/10 ,  H01L31/00

CPC分类号： H01L29/78618 ,  G02F1/136286 ,  G02F2001/13685 ,  H01L27/124 ,  H01L27/1255 ,  H01L29/458 ,  H01L29/4908 ,  H01L29/66757

摘要： A thin film transistor (TFT), an array substrate including the TFT, and methods of manufacturing the TFT and the array substrate. The TFT includes an active layer, and a metal member that corresponds to a portion of each of the source region and the drain region of the active layer, and is arranged on the active layer, a portion of the metal member contacts the source and drain regions of the active layer and the source and drain electrodes, and portions of the active layer that corresponds to portions below the metal member of the active layer are not doped.

摘要翻译： 薄膜晶体管（TFT），包括TFT的阵列基板以及制造TFT和阵列基板的方法。 TFT包括有源层和对应于有源层的源极区域和漏极区域的一部分的金属构件，并且布置在有源层上，金属构件的一部分接触源极和漏极 有源层和源极和漏极的区域以及对应于有源层的金属构件下方的部分的有源层的部分不被掺杂。

公开(公告)号：US08507912B2

公开(公告)日：2013-08-13

申请号：US13096211

申请日：2011-04-28

申请人： Sung-Ho Kim

发明人： Sung-Ho Kim

IPC分类号： H01L27/32

CPC分类号： H01L51/5271 ,  H01L27/3248

摘要： An organic light-emitting display device includes an active layer of a thin film transistor (TFT) formed on a substrate; a gate electrode of the TFT, wherein a first gate electrode including a transparent conductive material, a first insulating layer, and a second gate electrode are sequentially stacked; a pixel electrode disposed on the first insulating layer and including the transparent conductive material; a source electrode and a drain electrode of the TFT, a second insulating layer disposed between the source electrode and the drain electrode; a light reflector including the same material as the source electrode and the drain electrode, and disposed on the pixel electrode; an emission layer disposed on top of the pixel electrode and surrounded by an inner side of the light reflector; and a counter electrode facing towards the pixel electrode, wherein the emission layer is disposed between the pixel electrode and the counter electrode.

摘要翻译： 有机发光显示装置包括形成在基板上的薄膜晶体管（TFT）的有源层; TFT的栅电极，其中依次堆叠包括透明导电材料的第一栅电极，第一绝缘层和第二栅极电极; 设置在所述第一绝缘层上并包括所述透明导电材料的像素电极; TFT的源电极和漏电极，设置在源电极和漏电极之间的第二绝缘层; 包括与源电极和漏电极相同的材料并设置在像素电极上的光反射器; 发光层，设置在所述像素电极的顶部并被所述光反射体的内侧包围; 以及面向像素电极的对置电极，其中发射层设置在像素电极和对电极之间。

公开(公告)号：US20120322949A1

公开(公告)日：2012-12-20

申请号：US13543120

申请日：2012-07-06

申请人： Kazuki Fukushima ,  James L. Hedrick ,  Sung-Ho Kim ,  Robert M. Waymouth

发明人： Kazuki Fukushima ,  James L. Hedrick ,  Sung-Ho Kim ,  Robert M. Waymouth

IPC分类号： C08G63/91

CPC分类号： C08G64/18 ,  C08G64/0208 ,  C08J3/075 ,  C08J2369/00

摘要： Block copolymers include hydrophobic and hydrophilic blocks having repeating units derived from ring opening polymerization of one or more cyclic carbonate monomers. The carbonate monomers are independently selected from compounds of formula (II): wherein each Q′ and Qa group independently represents a hydrogen, an alkyl group, a halide, a carboxy group, an ester group, an amide group, an aryl group, an alkoxy group, or a foregoing Q′ or Qa group substituted with a carboxy group or an ester group, at least one Q′ and Qa group includes an ester group; each Y independently represents O, S, NH, or NQ″; n is an integer from 0 to 6, wherein when n is 0, carbons labeled 4 and 6 are linked together by a single bond; each Q″ group independently represents an alkyl group, an aryl group, or a foregoing Q″ group substituted with a carboxy group, or an ester group.

摘要翻译： 嵌段共聚物包括具有衍生自一种或多种环状碳酸酯单体的开环聚合的重复单元的疏水性和亲水嵌段。 碳酸酯单体独立地选自式（II）的化合物：其中每个Q'和Qa基团独立地表示氢，烷基，卤素，羧基，酯基，酰胺基，芳基， 烷氧基或由羧基或酯基取代的上述Q'或Qa基团，至少一个Q'和Qa基团包括酯基; 每个Y独立地表示O，S，NH或NQ“; n为0〜6的整数，n为0时，标记为4和6的碳通过单键连接在一起; 每个Q“基团独立地表示烷基，芳基或被羧基取代的前述Q”基团或酯基。

公开(公告)号：US20120074412A1

公开(公告)日：2012-03-29

申请号：US13084698

申请日：2011-04-12

申请人： Sung-Ho Kim

发明人： Sung-Ho Kim

IPC分类号： H01L51/52 ,  H01L51/56

CPC分类号： H01L51/5265 ,  H01L27/1255 ,  H01L27/3248 ,  H01L27/3262 ,  H01L27/3265 ,  H01L29/4908 ,  H01L51/5206 ,  H01L51/5209 ,  H01L51/5215 ,  H01L2227/323

摘要： In an organic light-emitting display device and a method of manufacturing the same, the organic light-emitting display device comprises: an active layer of a thin film transistor which includes a semiconductor material, and which is formed on a substrate; a lower electrode of a capacitor which includes a semiconductor material doped with ion impurities, and which is formed on the substrate; a first insulating layer formed on the substrate so as to cover the active layer and the lower electrode; a first gate electrode which is a transparent conductive material, and which is formed on the first insulating layer; a second gate electrode which is a metal, and which is formed on the first gate electrode; an upper electrode of a capacitor which is formed on the first insulating layer and includes a transparent conductive material; source and drain electrodes of a thin film transistor which are electrically connected to the active layer; a pixel electrode formed on the first insulating layer, which is a semi-permeable metal electrically connected to one of the source and drain electrodes; an intermediate layer formed on the pixel electrode and including an organic emission layer; and an opposite electrode facing the pixel electrode with the intermediate layer therebetween.

摘要翻译： 在有机发光显示装置及其制造方法中，有机发光显示装置包括：包含半导体材料的薄膜晶体管的有源层，其形成在基板上; 电容器的下部电极，其包含掺杂有离子杂质的半导体材料，并且形成在所述基板上; 形成在所述基板上以覆盖所述有源层和所述下电极的第一绝缘层; 第一栅极，其是透明导电材料，并且形成在第一绝缘层上; 第二栅极，其是金属，并且形成在所述第一栅电极上; 电容器的上电极，其形成在所述第一绝缘层上并且包括透明导电材料; 电连接到有源层的薄膜晶体管的源极和漏极; 形成在所述第一绝缘层上的像素电极，所述第一绝缘层是与所述源极和漏极之一电连接的半透过金属; 形成在像素电极上并包括有机发射层的中间层; 以及面对像素电极的相对电极，其间具有中间层。

公开(公告)号：US08134152B2

公开(公告)日：2012-03-13

申请号：US12686550

申请日：2010-01-13

申请人： Jong-Hyun Choi ,  Sung-Ho Kim

发明人： Jong-Hyun Choi ,  Sung-Ho Kim

IPC分类号： H01L29/12

CPC分类号： H01L27/12 ,  H01L27/0688 ,  H01L27/1225 ,  H01L27/1251 ,  H01L29/7869

摘要： A CMOS thin film transistor arrangement including a PMOS poly-silicon thin film transistor having a top gate configuration and a NMOS oxide thin film transistor having an inverted staggered bottom gate configuration where both transistors share the same gate electrode. The shared gate electrode is used as a doping or implantation mask in the formation of the source and drain regions of the poly-silicon transistor.

摘要翻译： 一种CMOS薄膜晶体管装置，其包括具有顶栅配置的PMOS多晶硅薄膜晶体管和具有倒置交错底栅结构的NMOS氧化物薄膜晶体管，其中两个晶体管共享相同的栅电极。 在形成多晶硅晶体管的源极和漏极区域中，共享栅电极用作掺杂或注入掩模。

公开(公告)号：US20110303923A1

公开(公告)日：2011-12-15

申请号：US13079611

申请日：2011-04-04

申请人： Dae-Hyun Noh ,  Sung-Ho Kim

发明人： Dae-Hyun Noh ,  Sung-Ho Kim

IPC分类号： H01L29/786 ,  H01L21/336 ,  H01L33/08 ,  H01L27/12

CPC分类号： H01L29/78618 ,  G02F1/136286 ,  G02F2001/13685 ,  H01L27/124 ,  H01L27/1255 ,  H01L29/458 ,  H01L29/4908 ,  H01L29/66757

摘要： A thin film transistor (TFT), an array substrate including the TFT, and methods of manufacturing the TFT and the array substrate. The TFT includes an active layer, and a metal member that corresponds to a portion of each of the source region and the drain region of the active layer, and is arranged on the active layer, a portion of the metal member contacts the source and drain regions of the active layer and the source and drain electrodes, and portions of the active layer that corresponds to portions below the metal member of the active layer are not doped.

摘要翻译： 薄膜晶体管（TFT），包括TFT的阵列基板以及制造TFT和阵列基板的方法。 TFT包括有源层和对应于有源层的源极区域和漏极区域的一部分的金属构件，并且布置在有源层上，金属构件的一部分接触源极和漏极 有源层和源极和漏极的区域以及对应于有源层的金属构件下方的部分的有源层的部分不被掺杂。

公开(公告)号：US20110054064A1

公开(公告)日：2011-03-03

申请号：US12549667

申请日：2009-08-28

申请人： Kazuki Fukushima ,  James L. Hedrick ,  Sung-Ho Kim ,  Robert M. Waymouth

发明人： Kazuki Fukushima ,  James L. Hedrick ,  Sung-Ho Kim ,  Robert M. Waymouth

IPC分类号： C08L69/00 ,  C08G64/18

CPC分类号： C08G64/18 ,  C08G64/0208 ,  C08J3/075 ,  C08J2369/00

摘要： A block copolymer includes a hydrophobic block and a hydrophilic block, wherein the hydrophobic block and the hydrophilic block include repeating units derived from ring opening polymerization of one or more cyclic carbonate monomers. The one or more cyclic carbonate monomers are independently selected from compounds of the general formula (II): wherein each Q′ and Qa group independently represents a hydrogen, an alkyl group, a halide, a carboxy group, an ester group, an amide group, an aryl group, an alkoxy group, or a foregoing Q′ or Qa group substituted with a carboxy group or an ester group, at least one Q′ and Qa group includes an ester group; each Y independently represents O, S, NH, or NQ″; n is an integer from 0 to 6, wherein when n is 0, carbons labeled 4 and 6 are linked together by a single bond; each Q″ group independently represents an alkyl group, an aryl group, or a foregoing Q″ group substituted with a carboxy group, or an ester group.

摘要翻译： 嵌段共聚物包括疏水嵌段和亲水嵌段，其中疏水嵌段和亲水嵌段包括衍生自一种或多种环状碳酸酯单体的开环聚合的重复单元。 一个或多个环状碳酸酯单体独立地选自通式（II）的化合物：其中每个Q'和Qa基团独立地表示氢，烷基，卤化物，羧基，酯基，酰胺基 或芳基，烷氧基或被羧基或酯基取代的前述Q'或Qa基团，至少一个Q'和Qa基包括酯基; 每个Y独立地表示O，S，NH或NQ“; n为0〜6的整数，n为0时，标记为4和6的碳通过单键连接在一起; 每个Q“基团独立地表示烷基，芳基或被羧基取代的前述Q”基团或酯基。

公开(公告)号：US20100108207A1

公开(公告)日：2010-05-06

申请号：US12612101

申请日：2009-11-04

申请人： Woo-Gon Kim ,  Chan-Bock Lee ,  Jong-Hyuk Baek ,  Do-Hee Hahn ,  Sung-Ho Kim ,  Chang-Hee Han ,  Tae-Kyu Kim ,  Jun-Hwan Kim

发明人： Woo-Gon Kim ,  Chan-Bock Lee ,  Jong-Hyuk Baek ,  Do-Hee Hahn ,  Sung-Ho Kim ,  Chang-Hee Han ,  Tae-Kyu Kim ,  Jun-Hwan Kim

IPC分类号： C21D8/00

CPC分类号： C21D8/1266 ,  C21D2211/004 ,  C21D2211/005 ,  C21D2211/008

摘要： Provided is a method of manufacturing a high strength ferritic/martensitic steel. The method includes melting a ferritic/martensitic steel, hot-working the melted ferritic/martensitic steel, normalizing the hot-worked ferritic/martensitic steel at a temperature of about 1050° C. to about 1200° C., tempering the ferritic/martensitic steel at a temperature of about 600° C. or less, and leaving MX precipitates while preventing a M23C6 precipitate from being precipitated, and cold-working and thermal-treating the ferritic/martensitic steel in a multistage fashion, and precipitating M23C6 precipitates. Through the above described configuration, the high strength ferritic/martensitic steel that prevents a ductility from being deteriorated even in a high-temperature environment may be manufactured.

摘要翻译： 提供一种制造高强度铁素体/马氏体钢的方法。 该方法包括熔化铁素体/马氏体钢，对熔融的铁素体/马氏体钢进行热加工，使热处理的铁素体/马氏体钢在约1050℃至约1200℃的温度下归一化，回火铁素体/马氏体 钢在约600℃以下，留下MX析出物，同时防止M23C6沉淀物析出，并对铁素体/马氏体钢进行多级冷加工和热处理，并析出M23C6沉淀物。 通过上述结构，可以制造即使在高温环境下也能够防止延展性劣化的高强度铁素体/马氏体钢。