摘要:
A gate wire including a gate line extending in the horizontal direction, and a gate electrode is formed on an insulating substrate. A gate insulating layer is formed on the gate wire and covers the same. A semiconductor pattern is formed on the gate insulating layer 30, and formed on the semiconductor pattern are a data wire having a date line in the vertical direction, a source electrode, a drain electrode separated from the source electrode opposite the source electrode with respect to the gate electrode, and an align pattern located on both sides of the data line. A passivation layer is formed on the data wire and the align pattern, and has contact holes exposing the drain electrode and an opening exposing the substrate between the data line and the align pattern. Here, the align pattern adjacent to the data line is exposed through the opening, and the semiconductor pattern and the gate insulating layer are under-cut. A pixel electrode connected to the drain electrode through the contact hole is formed on the passivation layer. Here, the opening is located between the data line and the pixel electrode. In this structure, misalignment occurring in the manufacturing process of a thin film transistor panel for a liquid crystal display is minimized, and stitch defects are prevented by uniformity forming a coupling capacitance between the data line and the pixel electrode. Shorts between the data line and the pixel electrode are prevented by forming the opening between the data line and the pixel electrode.
摘要:
A method for manufacturing a thin film transistor array panel is disclosed. A gate wiring pattern is formed on an insulating substrate. A gate insulating layer is formed on the gate wiring pattern. A semiconductor pattern is formed on the gate insulating layer. A transparent conductive layer is formed on the gate insulating layer. The transparent conductive layer is patterned to form a pixel electrode. An opening is formed at a circumference of the pixel electrode. The opening minimizes misalignment during the manufacturing process and prevents shorts between a data line and the pixel electrode.
摘要:
A method for manufacturing a thin film transistor array panel is disclosed. A gate wiring pattern is formed on an insulating substrate. A gate insulating layer is formed on the gate wiring pattern. A semiconductor pattern is formed on the gate insulating layer. A transparent conductive layer is formed on the gate insulating layer. The transparent conductive layer is patterned to form a pixel electrode. An opening is formed at a circumference of the pixel electrode. The opening minimizes misalignment during the manufacturing process and prevents shorts between a data line and the pixel electrode.
摘要:
Disclosed is a thin film transistor substrate and a system for inspecting the same. The thin film transistor substrate comprises gate wiring formed on an insulation substrate and including gate lines, and gate electrodes and gate pads connected to the gate lines; a gate insulation layer covering the gate wiring; a semiconductor layer formed over the gate insulation layer; data wiring formed over the gate insulation layer and including data pads; a protection layer covering the data wiring; auxiliary pads connected to the data pads through contact holes formed in the protection layer; and a pad auxiliary layer formed protruding a predetermined height under the data pads. The inspection system for determining whether a thin film transistor substrate is defective, in which the thin film transistor substrate comprises gate wiring including gate lines, gate electrodes and gate pads, and data wiring including source electrodes and drain electrodes, includes a probe pin for contacting the gate pads or data pads and transmitting a corresponding signal, wherein a contact tip at a distal end of the probe pin for contacting the gate pads or the data pads is rounded, and a radius of the rounded contact tip is 2 μm or less, or the rounded contact tip is coated with gold (Au).
摘要:
A gate wire including a gate line extending in the horizontal direction, and a gate electrode is formed on an insulating substrate. A gate insulating layer is formed on the gate wire and covers the same. A semiconductor pattern is formed on the gate insulating layer 30, and formed on the semiconductor pattern are a data wire having a data line in the vertical direction, a source electrode, a drain electrode separated from the source electrode opposite the source electrode with respect to the gate electrode, and an align pattern located on both sides of the data line. A passivation layer is formed on the data wire and the align pattern, and has contact holes exposing the drain electrode and an opening exposing the substrate between the data line and the align pattern. Here, the align pattern adjacent to the data line is exposed through the opening, and the semiconductor pattern and the gate insulating layer are under-cut. A pixel electrode connected to the drain electrode through the contact hole is formed on the passivation layer. Here, the opening is located between the data line and the pixel electrode. In this structure, misalignment occurring in the manufacturing process of a thin film transistor panel for a liquid crystal display is minimized, and stitch defects are prevented by uniformly forming a coupling capacitance between the data line and the pixel electrode. Shorts between the data line and the pixel electrode are prevented by forming the opening between the data line and the pixel electrode.
摘要:
A method for manufacturing a thin film transistor array panel is disclosed. A gate wiring pattern is formed on an insulating substrate. A gate insulating layer is formed on the gate wiring pattern. A semiconductor pattern is formed on the gate insulating layer. A transparent conductive layer is formed on the gate insulating layer. The transparent conductive layer is patterned to form a pixel electrode. An opening is formed at a circumference of the pixel electrode. The opening minimizes misalignment during the manufacturing process and prevents shorts between a data line and the pixel electrode.
摘要:
A method for manufacturing a thin film transistor array panel is disclosed. A gate wiring pattern is formed on an insulating substrate. A gate insulating layer is formed on the gate wiring pattern. A semiconductor pattern is formed on the gate insulating layer. A transparent conductive layer is formed on the gate insulating layer. The transparent conductive layer is patterned to form a pixel electrode. An opening is formed at a circumference of the pixel electrode. The opening minimizes misalignment during the manufacturing process and prevents shorts between a data line and the pixel electrode.
摘要:
Disclosed is a thin film transistor substrate and a system for inspecting the same. The thin film transistor substrate comprises gate wiring formed on an insulation substrate and including gate lines, and gate electrodes and gate pads connected to the gate lines; a gate insulation layer covering the gate wiring; a semiconductor layer formed over the gate insulation layer; data wiring formed over the gate insulation layer and including data pads; a protection layer covering the data wiring; auxiliary pads connected to the data pads through contact holes formed in the protection layer; and a pad auxiliary layer formed protruding a predetermined height under the data pads. The inspection system for determining whether a thin film transistor substrate is defective, in which the thin film transistor substrate comprises gate wiring including gate lines, gate electrodes and gate pads, and data wiring including source electrodes and drain electrodes, includes a probe pin for contacting the gate pads or data pads and transmitting a corresponding signal, wherein a contact tip at a distal end of the probe pin for contacting the gate pads or the data pads is rounded, and a radius of the rounded contact tip is 2 μm or less, or the rounded contact tip is coated with gold (Au).
摘要:
A method for manufacturing a thin film transistor array panel is disclosed. A gate wiring pattern is formed on an insulating substrate. A gate insulating layer is formed on the gate wiring pattern. A semiconductor pattern is formed on the gate insulating layer. A transparent conductive layer is formed on the gate insulating layer. The transparent conductive layer is patterned to form a pixel electrode. An opening is formed at a circumference of the pixel electrode. The opening minimizes misalignment during the manufacturing process and prevents shorts between a data line and the pixel electrode.
摘要:
A method for manufacturing a thin film transistor array panel is disclosed. A gate wiring pattern is formed on an insulating substrate. A gate insulating layer is formed on the gate wiring pattern. A semiconductor pattern is formed on the gate insulating layer. A transparent conductive layer is formed on the gate insulating layer. The transparent conductive layer is patterned to form a pixel electrode. An opening is formed at a circumference of the pixel electrode. The opening minimizes misalignment during the manufacturing process and prevents shorts between a data line and the pixel electrode.