公开(公告)号：US09831154B2

公开(公告)日：2017-11-28

申请号：US14331046

申请日：2014-07-14

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.

Inventor： Tsung-Han Tsai ,  Volume Chien ,  Yung-Lung Hsu ,  Chung-Bin Tseng ,  Keng-Ying Liao ,  Po-Zen Chen

IPC: H01L21/44 ,  H01L21/76 ,  H01L23/48 ,  H01L21/768 ,  H01L27/06 ,  H01L27/146

CPC classification number: H01L23/481 ,  H01L21/76805 ,  H01L21/76831 ,  H01L21/76832 ,  H01L21/76898 ,  H01L27/0688 ,  H01L27/14634 ,  H01L2224/24147 ,  H01L2224/8203 ,  H01L2924/0002 ,  H01L2924/00

Abstract: The present disclosure provides a semiconductor structure. The structure includes a first substrate; a first dielectric layer having a first surface in proximity to the first substrate and a second surface away from the first substrate; a first interconnect penetrating the first surface of the first dielectric layer; and a protection layer extending along a portion of a sidewall of the first interconnect. A thickness of the protection layer is in a range of from about 0.02 μm to about 0.2 μm.

公开(公告)号：US09484376B2

公开(公告)日：2016-11-01

申请号：US14291512

申请日：2014-05-30

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.

Inventor： Yu-Yi Wang ,  Keng-Ying Liao ,  Po-Zen Chen ,  Yi-Hung Chen

IPC: H01L31/02 ,  H01L27/14 ,  H01L27/146

CPC classification number: H01L27/1463 ,  H01L27/14621 ,  H01L27/14625 ,  H01L27/14627 ,  H01L27/1464 ,  H01L27/14687 ,  H01L27/14689

Abstract: The present disclosure provides a method for manufacturing a semiconductor isolation structure, including providing a substrate with a top surface; forming a patterned mask over the top surface; forming a trench through the patterned mask in the substrate by a directional etch comprising nitrogen-containing substance, wherein an aspect ratio of the trench is formed to be greater than about 18, and a ratio of a width of a narrowest portion and a width of a widest portion of the isolation region is formed to be greater than about 0.7; and filling the trench with insulating materials. The present disclosure also provides an image sensing device, including a radiation sensing region with a first isolation region separating adjacent radiation detecting units and a peripheral region, wherein an aspect ratio of the first isolation region is greater than about 18.

Abstract translation: 本公开提供了一种用于制造半导体隔离结构的方法，包括提供具有顶表面的基板; 在顶表面上形成图案化掩模; 通过包含含氮物质的定向蚀刻在衬底中形成通过图案化掩模的沟槽，其中沟槽的纵横比形成为大于约18，并且最窄部分的宽度与宽度之比 隔离区域的最宽部分形成为大于约0.7; 并用绝缘材料填充沟槽。 本公开还提供了一种图像感测装置，其包括具有分隔相邻辐射检测单元的第一隔离区域和周边区域的辐射感测区域，其中第一隔离区域的纵横比大于约18。