公开(公告)号：US20210036179A1

公开(公告)日：2021-02-04

申请号：US16865819

申请日：2020-05-04

Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.

Inventor： Chih Wei Sung ,  Chung-Bin Tseng ,  Keng-Ying Liao ,  Yen-Jou Wu ,  Po-Zen Chen ,  Su-Yu Yeh ,  Ching-Chung Su

IPC: H01L31/18

Abstract: A method includes forming image sensors in a semiconductor substrate. A first alignment mark is formed close to a front side of the semiconductor substrate. The method further includes performing a backside polishing process to thin the semiconductor substrate, forming a second alignment mark on the backside of the semiconductor substrate, and forming a feature on the backside of the semiconductor substrate. The feature is formed using the second alignment mark for alignment.

公开(公告)号：US09691809B2

公开(公告)日：2017-06-27

申请号：US13931500

申请日：2013-06-28

Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.

Inventor： Jeng Chang Her ,  Hung Jui Chang ,  Li Te Hsu ,  Chung-Bin Tseng

IPC: H01L27/146

CPC classification number: H01L27/14685 ,  H01L27/1462 ,  H01L27/1463 ,  H01L27/14636 ,  H01L27/1464

Abstract: Disclosed is a method of fabricating an image sensor device, such as a BSI image sensor, and more particularly, a method of forming a dielectric film in a radiation-absorption region without using a conventional plasma etching causing roughness on the surface and non-uniformity within a die and a wafer. The method includes providing layers comprising a substrate having radiation sensors adjacent its front surface, an anti-reflective layer formed over the back surface of the substrate, a sacrificial dielectric layer formed over the anti-reflective layer, and a conductive layer formed over the sacrificial dielectric layer in a radiation-blocking region. The method further includes removing the sacrificial dielectric layer in the radiation-absorption region completely by a highly selective etching process and forming a dielectric film on the anti-reflective layer by deposition such as CVD or PVD while precisely controlling the thickness.

公开(公告)号：US20140263958A1

公开(公告)日：2014-09-18

申请号：US13931500

申请日：2013-06-28

Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.

Inventor： Jeng Chang Her ,  Hung Jui Chang ,  Li Te Hsu ,  Chung-Bin Tseng

IPC: H01L27/146

CPC classification number: H01L27/14685 ,  H01L27/1462 ,  H01L27/1463 ,  H01L27/14636 ,  H01L27/1464

Abstract: Disclosed is a method of fabricating an image sensor device, such as a BSI image sensor, and more particularly, a method of forming a dielectric film in a radiation-absorption region without using a conventional plasma etching causing roughness on the surface and non-uniformity within a die and a wafer. The method includes providing layers comprising a substrate having radiation sensors adjacent its front surface, an anti-reflective layer formed over the back surface of the substrate, a sacrificial dielectric layer formed over the anti-reflective layer, and a conductive layer formed over the sacrificial dielectric layer in a radiation-blocking region. The method further includes removing the sacrificial dielectric layer in the radiation-absorption region completely by a highly selective etching process and forming a dielectric film on the anti-reflective layer by deposition such as CVD or PVD while precisely controlling the thickness.

Abstract translation: 公开了一种制造诸如BSI图像传感器的图像传感器装置的方法，更具体地，涉及在辐射吸收区域中形成电介质膜的方法，而不使用常规的等离子体蚀刻引起表面粗糙度和不均匀性 在芯片和晶片内。 该方法包括提供包括具有邻近其前表面的辐射传感器的衬底的层，形成在衬底的背面上的抗反射层，形成在抗反射层上的牺牲绝缘层，以及形成在牺牲层上的导电层 介电层在辐射阻挡区域。 该方法还包括通过高选择性蚀刻工艺完全去除辐射吸收区域中的牺牲介电层，并通过诸如CVD或PVD之类的沉积在抗反射层上形成电介质膜，同时精确地控制厚度。

公开(公告)号：US11430909B2

公开(公告)日：2022-08-30

申请号：US16865819

申请日：2020-05-04

Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.

Inventor： Chih Wei Sung ,  Chung-Bin Tseng ,  Keng-Ying Liao ,  Yen-Jou Wu ,  Po-Zen Chen ,  Su-Yu Yeh ,  Ching-Chung Su

IPC: H01L27/146 ,  H01L31/18 ,  H01L23/544

Abstract: A method includes forming image sensors in a semiconductor substrate. A first alignment mark is formed close to a front side of the semiconductor substrate. The method further includes performing a backside polishing process to thin the semiconductor substrate, forming a second alignment mark on the backside of the semiconductor substrate, and forming a feature on the backside of the semiconductor substrate. The feature is formed using the second alignment mark for alignment.

公开(公告)号：US10658269B2

公开(公告)日：2020-05-19

申请号：US16389762

申请日：2019-04-19

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.

Inventor： Tsung-Han Tsai ,  Volume Chien ,  Yung-Lung Hsu ,  Chung-Bin Tseng ,  Keng-Ying Liao ,  Po-Zen Chen

IPC: H01L21/76 ,  H01L21/331 ,  H01L21/44 ,  H01L23/48 ,  H01L21/768 ,  H01L27/06 ,  H01L27/146

Abstract: The present disclosure provides a semiconductor structure. The structure includes a first substrate; a first dielectric layer having a first surface in proximity to the first substrate and a second surface away from the first substrate; a first interconnect penetrating the first surface of the first dielectric layer; and a protection layer extending along a portion of a sidewall of the first interconnect. A thickness of the protection layer is in a range of from about 0.02 μm to about 0.2 μm.

公开(公告)号：US10269684B2

公开(公告)日：2019-04-23

申请号：US15815392

申请日：2017-11-16

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.

Inventor： Tsung-Han Tsai ,  Volume Chien ,  Yung-Lung Hsu ,  Chung-Bin Tseng ,  Keng-Ying Liao ,  Po-Zen Chen

IPC: H01L23/48 ,  H01L23/52 ,  H01L29/40 ,  H01L21/768 ,  H01L27/06 ,  H01L27/146

Abstract: The present disclosure provides a semiconductor structure. The structure includes a first substrate; a first dielectric layer having a first surface in proximity to the first substrate and a second surface away from the first substrate; a first interconnect penetrating the first surface of the first dielectric layer; and a protection layer extending along a portion of a sidewall of the first interconnect. A thickness of the protection layer is in a range of from about 0.02 μm to about 0.2 μm.

公开(公告)号：US10056316B2

公开(公告)日：2018-08-21

申请号：US15823297

申请日：2017-11-27

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.

Inventor： Tsung-Han Tsai ,  Volume Chien ,  Yung-Lung Hsu ,  Chung-Bin Tseng ,  Keng-Ying Liao ,  Po-Zen Chen

IPC: H01L21/44 ,  H01L23/48 ,  H01L21/768 ,  H01L27/06 ,  H01L27/146

CPC classification number: H01L23/481 ,  H01L21/76805 ,  H01L21/76831 ,  H01L21/76832 ,  H01L21/76898 ,  H01L27/0688 ,  H01L27/14634 ,  H01L2224/24147 ,  H01L2224/8203 ,  H01L2924/0002 ,  H01L2924/00

Abstract: The present disclosure provides a semiconductor structure. The structure includes a first substrate; a first dielectric layer having a first surface in proximity to the first substrate and a second surface away from the first substrate; a first interconnect penetrating the first surface of the first dielectric layer; and a protection layer extending along a portion of a sidewall of the first interconnect. A thickness of the protection layer is in a range of from about 0.02 μm to about 0.2 μm.

公开(公告)号：US10008530B2

公开(公告)日：2018-06-26

申请号：US14610049

申请日：2015-01-30

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.

Inventor： Keng-Ying Liao ,  Chung-Bin Tseng ,  Cheng-Hsien Chou ,  Jiech-Fun Lu ,  Po-Zen Chen ,  Yi-Hung Chen

IPC: H01L27/146

CPC classification number: H01L27/1463 ,  H01L27/14623 ,  H01L27/14636 ,  H01L27/1464

Abstract: Some embodiments of the present disclosure provide a back side illuminated (BSI) image sensor. The BSI image sensor includes a semiconductive substrate, a deep trench isolation (DTI) at a back side of the semiconductive substrate, and a dielectric layer. the dielectric layer includes a top portion over the back side, and a side portion lined to a sidewall of the DTI. The BSI image sensor includes a planarization stop layer disposed conformally on top of the dielectric layer. The planarization stop layer includes a top section on the top portion, a side section lined against the side portion, and a first transmittance. The BSI image sensor includes a low-transparent material inside the DTI, and the low-transparent material includes a second transmittance. The second transmittance is lower than the first transmittance.

公开(公告)号：US09831154B2

公开(公告)日：2017-11-28

申请号：US14331046

申请日：2014-07-14

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.

Inventor： Tsung-Han Tsai ,  Volume Chien ,  Yung-Lung Hsu ,  Chung-Bin Tseng ,  Keng-Ying Liao ,  Po-Zen Chen

IPC: H01L21/44 ,  H01L21/76 ,  H01L23/48 ,  H01L21/768 ,  H01L27/06 ,  H01L27/146

CPC classification number: H01L23/481 ,  H01L21/76805 ,  H01L21/76831 ,  H01L21/76832 ,  H01L21/76898 ,  H01L27/0688 ,  H01L27/14634 ,  H01L2224/24147 ,  H01L2224/8203 ,  H01L2924/0002 ,  H01L2924/00

Abstract: The present disclosure provides a semiconductor structure. The structure includes a first substrate; a first dielectric layer having a first surface in proximity to the first substrate and a second surface away from the first substrate; a first interconnect penetrating the first surface of the first dielectric layer; and a protection layer extending along a portion of a sidewall of the first interconnect. A thickness of the protection layer is in a range of from about 0.02 μm to about 0.2 μm.